Onsemi Small Signal Field Effect Transistors (FET) 1,976

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

NTJS4151PT1

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

.06 ohm

3.3 A

DUAL

R-PDSO-G6

1

Not Qualified

e0

235

MMBF4091D87Z

Onsemi

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

JUNCTION

150 Cel

SILICON

30 ohm

DUAL

R-PDSO-G3

Not Qualified

5 pF

NTMFS4922NET3G

Onsemi

N-CHANNEL

SINGLE

YES

69.44 W

1

147 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

147 A

NOT SPECIFIED

NOT SPECIFIED

MGSF3455X

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.1 ohm

1.45 A

DUAL

R-PDSO-G6

Not Qualified

NTJS3157NT4

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3.2 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.06 ohm

3.2 A

DUAL

R-PDSO-G6

1

Not Qualified

e0

235

BS170ZL1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

.35 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

.5 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin/Silver/Copper (Sn/Ag/Cu)

5 ohm

.5 A

BOTTOM

O-PBCY-T3

Not Qualified

EUROPEAN PART NUMBER

TO-226AA

e1

40

260

MGSF1N02ELT1

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.4 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.75 A

3

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.085 ohm

.75 A

DUAL

R-PDSO-G3

1

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-236

e0

235

2SK715V

Onsemi

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

AMPLIFIER

15 V

THROUGH-HOLE

RECTANGULAR

DEPLETION MODE

1

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

.05 A

SINGLE

R-PSIP-T3

Not Qualified

LOW NOISE

NTJD4401NT2G

Onsemi

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

YES

.55 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

.63 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.375 ohm

.63 A

DUAL

R-PDSO-G6

1

Not Qualified

e3

30

260

5 pF

2N5458RLRP

Onsemi

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

25 V

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

150 Cel

SILICON

BOTTOM

O-PBCY-T3

Not Qualified

LOW NOISE

TO-92

3 pF

MMBF1374T1

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.1 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.05 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

50 ohm

.05 A

DUAL

R-PDSO-G3

Not Qualified

e0

235

NTMFS4846NT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

55.5 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

100 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin (Sn)

.0051 ohm

100 A

DUAL

R-PDSO-F5

1

DRAIN

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

BS108G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

.35 W

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

.25 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

8 ohm

.25 A

BOTTOM

O-PBCY-T3

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-92

e1

260

10 pF

NTMFS4925NET3G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

23.2 W

PLASTIC/EPOXY

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

48 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.001 ohm

16.7 A

DUAL

R-PDSO-F5

DRAIN

e3

NTTFD013N03P8

Onsemi

N-CHANNEL

SERIES, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

2

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.0063 ohm

46 A

DUAL

S-PDSO-N8

50 pF

MMBF4119D87Z

Onsemi

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

JUNCTION

150 Cel

SILICON

DUAL

R-PDSO-G3

Not Qualified

1.5 pF

NTMFS4847NT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

48.1 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

85 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.0062 ohm

100 A

DUAL

R-PDSO-F5

1

DRAIN

Not Qualified

e3

30

260

2N5461RLRM

Onsemi

P-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

135 Cel

SILICON

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

2 pF

NTR2101PT1

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.96 W

PLASTIC/EPOXY

SWITCHING

8 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3.7 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.052 ohm

3.7 A

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e0

235

FDPC8012S

Onsemi

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

25 V

NO LEAD

SQUARE

ENHANCEMENT MODE

2

88 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

.007 ohm

13 A

DUAL

S-PDSO-N8

1

MO-240BA

e3

30

260

NTMFS4C808NAT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

25.5 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.00747 ohm

9 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

39 pF

NTMFS4119NT3G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

6.1 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

18 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin (Sn)

.0035 ohm

11 A

DUAL

R-PDSO-F5

1

DRAIN

Not Qualified

e3

40

260

NTJD4001NT2G

Onsemi

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

YES

.272 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

.25 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

2.5 ohm

.25 A

DUAL

R-PDSO-G6

1

Not Qualified

e3

30

260

12 pF

2SK1578C

Onsemi

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

DEPLETION MODE

1

3

IN-LINE

JUNCTION

SILICON

.001 A

SINGLE

R-PSIP-T3

Not Qualified

NTMFS4846NT3G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

55.5 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

100 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin (Sn)

.0051 ohm

100 A

DUAL

R-PDSO-F5

1

DRAIN

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

BSR56L

Onsemi

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

JUNCTION

150 Cel

SILICON

TIN LEAD

24 ohm

DUAL

R-PDSO-G3

Not Qualified

TO-236AB

e0

MMBFJ175LT1

Onsemi

P-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

CHOPPER

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

FET General Purpose Small Signal

JUNCTION

150 Cel

SILICON

Tin/Lead (Sn/Pb)

125 ohm

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e0

30

235

5.5 pF

MMBFJ177LT3

Onsemi

P-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

CHOPPER

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

JUNCTION

150 Cel

SILICON

TIN LEAD

300 ohm

DUAL

R-PDSO-G3

Not Qualified

TO-236AB

e0

5.5 pF

NTTFS4937NTAG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

43.1 W

UNSPECIFIED

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

75 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

.007 ohm

11 A

DUAL

S-XDSO-N5

1

DRAIN

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

MMBF2202PT1

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.15 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.3 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin/Lead (Sn/Pb)

2.2 ohm

.3 A

DUAL

R-PDSO-G3

1

Not Qualified

e0

30

235

NTJD3158CT4G

Onsemi

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.35 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

.82 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.375 ohm

.63 A

DUAL

R-PDSO-G6

Not Qualified

5 pF

NTJD4401NT4G

Onsemi

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

YES

.55 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

.63 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.375 ohm

.63 A

DUAL

R-PDSO-G6

1

Not Qualified

e3

260

5 pF

2N5461RLRA

Onsemi

P-CHANNEL

SINGLE

NO

.31 W

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

FET General Purpose Small Signal

JUNCTION

150 Cel

SILICON

TIN LEAD

BOTTOM

O-PBCY-T3

Not Qualified

LOW NOISE

TO-92

e0

235

2 pF

IRLM110A

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.2 W

PLASTIC/EPOXY

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.44 ohm

1.5 A

DUAL

R-PDSO-G4

25 pF

NTTFS1D8N02P1E

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

48 W

PLASTIC/EPOXY

SWITCHING

25 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-50 Cel

MATTE TIN

.0013 ohm

152 A

DUAL

S-PDSO-N5

1

e3

30

260

NTLUS3A40PZTAG

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.7 W

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

6.4 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.029 ohm

4 A

DUAL

S-PDSO-N6

1

Not Qualified

e3

30

260

NTTFS4C13NTAG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

21.5 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

SQUARE

ENHANCEMENT MODE

1

38 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

.0094 ohm

7.2 A

DUAL

S-PDSO-F5

1

DRAIN

e3

30

260

NTMFS4849NT3G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

42.4 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

71 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin (Sn)

.0079 ohm

100 A

DUAL

R-PDSO-F5

1

DRAIN

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

CPH3456-TL-W

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN BISMUTH

.071 ohm

3.5 A

DUAL

R-PDSO-G3

1

TO-236

e6

30

260

2SK715W

Onsemi

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

AMPLIFIER

15 V

THROUGH-HOLE

RECTANGULAR

DEPLETION MODE

1

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

.05 A

SINGLE

R-PSIP-T3

Not Qualified

LOW NOISE

MGSF3454XT1

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.95 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1.75 A

6

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.065 ohm

1.75 A

DUAL

R-PDSO-G6

Not Qualified

e0

NTR3162PT3G

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.25 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2.2 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

.07 ohm

2.2 A

DUAL

R-PDSO-G3

Not Qualified

TO-236AB

e3

NOT SPECIFIED

NOT SPECIFIED

NTMFS008N12MC

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

120 V

NO LEAD

RECTANGULAR

DUAL GATE, ENHANCEMENT MODE

1

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.008 ohm

DUAL

R-PDSO-N8

1

DRAIN

40

260

NTLUD3191PZTAG

Onsemi

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

SQUARE

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.25 ohm

1.1 A

DUAL

S-PDSO-N6

1

DRAIN

Not Qualified

e3

NTTFS4C08NTWG

Onsemi

MATTE TIN

1

e3

30

260

MGSF3441V

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.09 ohm

3.3 A

DUAL

R-PDSO-G6

Not Qualified

CPH3448

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.05 ohm

4 A

DUAL

R-PDSO-G3

CPH3348-TL-E

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1 W

PLASTIC/EPOXY

SWITCHING

12 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

.07 ohm

3 A

DUAL

R-PDSO-G3

1

TO-236

e6

30

260

Small Signal Field Effect Transistors (FET)

Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.