Onsemi Small Signal Field Effect Transistors (FET) 1,976

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

NTTFS4C08NTAG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

25.5 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

SQUARE

ENHANCEMENT MODE

1

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0059 ohm

9.3 A

DUAL

S-PDSO-F8

1

DRAIN

e3

30

260

39 pF

NTLUS3C18PZTBG

Onsemi

P-CHANNEL

SINGLE

YES

3.83 W

1

7 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

7 A

1

e3

30

260

MMBF4092D87Z

Onsemi

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

JUNCTION

150 Cel

SILICON

50 ohm

DUAL

R-PDSO-G3

Not Qualified

5 pF

MGSF1N02ELT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.4 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.75 A

3

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

.085 ohm

.75 A

DUAL

R-PDSO-G3

1

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-236

e3

260

FDMD82100L

Onsemi

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

YES

38 W

PLASTIC/EPOXY

SWITCHING

100 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

2

7 A

12

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.0195 ohm

7 A

DUAL

R-PDSO-N12

1

DRAIN SOURCE

e3

30

260

15 pF

2N5460RL

Onsemi

P-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

135 Cel

SILICON

BOTTOM

O-PBCY-T3

Not Qualified

EUROPEAN PART NUMBER

TO-92

2 pF

NTTFS4939NTAG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

29.8 W

UNSPECIFIED

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

52 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

.008 ohm

8.9 A

DUAL

S-XDSO-N5

1

DRAIN

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

VN2406LRLRM

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

240 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

6 ohm

.2 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e0

20 pF

2SK3796-4-TL-E

Onsemi

Tin/Bismuth (Sn/Bi)

1

e6

NTLUS4C12NTAG

Onsemi

MATTE TIN

1

e3

30

260

MGSF3442XT1

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.4 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1.7 A

6

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.07 ohm

1.7 A

DUAL

R-PDSO-G6

Not Qualified

e0

235

CPH3351TL

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1.8 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.25 ohm

1.8 A

DUAL

R-PDSO-G3

2N5458RLRA

Onsemi

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

25 V

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

150 Cel

SILICON

BOTTOM

O-PBCY-T3

Not Qualified

LOW NOISE

TO-92

3 pF

NTMFS4825NFET3G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.002 ohm

17 A

DUAL

R-PDSO-F5

DRAIN

Not Qualified

e3

NTTFS4945NTAG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

UNSPECIFIED

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

Tin (Sn)

.013 ohm

7.1 A

DUAL

S-XDSO-N5

1

DRAIN

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

NTMFS4707NT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

6.25 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

10.2 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin (Sn)

.013 ohm

6.9 A

DUAL

R-PDSO-F5

DRAIN

Not Qualified

e3

40

260

CPH3350-TL-W

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN BISMUTH

.083 ohm

3 A

DUAL

R-PDSO-G3

1

TO-236

e6

30

260

2N5461G

Onsemi

P-CHANNEL

SINGLE

NO

.31 W

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

FET General Purpose Small Signal

JUNCTION

150 Cel

SILICON

TIN SILVER COPPER

BOTTOM

O-PBCY-T3

Not Qualified

LOW NOISE

TO-92

e1

260

2 pF

NTMFS006N12MC

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

120 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.006 ohm

DUAL

R-PDSO-F5

1

DRAIN

40

260

VN2410LRL

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

240 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

10 ohm

.2 A

BOTTOM

O-PBCY-T3

Not Qualified

EUROPEAN PART NUMBER

TO-92

e0

20 pF

NTZD3154NT2G

Onsemi

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

.55 ohm

.54 A

DUAL

R-PDSO-F6

1

Not Qualified

e3

30

260

20 pF

NTTFS8D1N08H

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

80 V

FLAT

SQUARE

ENHANCEMENT MODE

1

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.0121 ohm

DUAL

S-PDSO-F8

DRAIN

CPH3453

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1 W

PLASTIC/EPOXY

SWITCHING

250 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.3 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

11 ohm

.3 A

DUAL

R-PDSO-G3

Not Qualified

NTJS3151PT2

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

.625 W

PLASTIC/EPOXY

SWITCHING

12 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2.7 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.06 ohm

2.7 A

DUAL

R-PDSO-G6

1

Not Qualified

e0

235

VN10LMZL1

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

60 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

5 ohm

.3 A

BOTTOM

O-PBCY-T3

Not Qualified

EUROPEAN PART NUMBER

TO-92

e0

5 pF

BS107ARL

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

6.4 ohm

.25 A

BOTTOM

O-PBCY-T3

Not Qualified

EUROPEAN PART NUMBER

TO-92

e0

FDS6679Z

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

13 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.009 ohm

13 A

DUAL

R-PDSO-G8

1

Not Qualified

e3

30

260

NTJD4401NT2

Onsemi

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

YES

.55 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

.63 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.375 ohm

.63 A

DUAL

R-PDSO-G6

Not Qualified

e0

235

5 pF

MGSF1N03L

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.73 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1.6 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN LEAD

.1 ohm

1.6 A

DUAL

R-PDSO-G3

TO-236

e0

40 pF

NTTFS3A08PTAG

Onsemi

NOT SPECIFIED

NOT SPECIFIED

NTR4101PT1

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.5 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2.3 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.085 ohm

1.8 A

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e0

235

2SK3796-3-TL-E

Onsemi

TIN BISMUTH

1

e6

30

260

MGSF1N02LT1

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.225 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.75 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin/Lead (Sn/Pb)

.09 ohm

.75 A

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e0

30

235

NTJS3157NT1

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3.2 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.06 ohm

3.2 A

DUAL

R-PDSO-G6

1

Not Qualified

e0

MGSF1P02LT1

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.225 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.75 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.35 ohm

.75 A

DUAL

R-PDSO-G3

1

Not Qualified

TO-236

e0

235

FDS6680S

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.5 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

11.5 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.011 ohm

11.5 A

DUAL

R-PDSO-G8

1

Not Qualified

e3

MMBF4393LT3G

Onsemi

N-CHANNEL

SINGLE

YES

.225 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

Other Transistors

JUNCTION

150 Cel

SILICON

MATTE TIN

100 ohm

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e3

30

260

3.5 pF

VN2222LLRL

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

.4 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

.15 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

7.5 ohm

.15 A

BOTTOM

O-PBCY-T3

Not Qualified

EUROPEAN PART NUMBER

TO-92

e0

235

5 pF

FDN371N

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.46 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2.5 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.05 ohm

2.5 A

DUAL

R-PDSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

BS170RLRMG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

.35 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

.5 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

5 ohm

.5 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-226AA

e1

260

2N7000RL

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

60 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

5 ohm

.2 A

BOTTOM

O-PBCY-T3

Not Qualified

EUROPEAN PART NUMBER

TO-92

e0

5 pF

FDC6506PTR

Onsemi

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

-55 Cel

.17 ohm

1.8 A

DUAL

R-PDSO-G6

LOGIC LEVEL COMPATIBLE

BS170RL

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

5 ohm

.5 A

BOTTOM

O-PBCY-T3

Not Qualified

EUROPEAN PART NUMBER

TO-92

e0

VN0300L

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1 W

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

.64 A

3

CYLINDRICAL

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

1.2 ohm

.2 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e0

235

25 pF

NTTFS4945NTWG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

UNSPECIFIED

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

Tin (Sn)

.013 ohm

7.1 A

DUAL

S-XDSO-N5

1

DRAIN

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

NTJD4152PT1

Onsemi

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

YES

.35 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

.88 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.26 ohm

.88 A

DUAL

R-PDSO-G6

1

Not Qualified

e0

235

5LN01C-TB-E

Onsemi

N-CHANNEL

SINGLE

YES

.25 W

1

.1 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Bismuth (Sn/Bi)

.1 A

1

e6

MMBF5459D87Z

Onsemi

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

JUNCTION

150 Cel

SILICON

DUAL

R-PDSO-G3

Not Qualified

3 pF

Small Signal Field Effect Transistors (FET)

Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.