Onsemi Small Signal Field Effect Transistors (FET) 1,976

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

NTLUF4189NZTAG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.3 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

1.5 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.2 ohm

1.2 A

DUAL

S-PDSO-N6

1

DRAIN

Not Qualified

e3

260

NTMFS4122NT3G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

5.8 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

14 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin (Sn)

.006 ohm

9.1 A

DUAL

R-PDSO-F5

1

DRAIN

Not Qualified

e3

40

260

NDS355N

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.085 ohm

1.6 A

DUAL

R-PDSO-G3

1

Not Qualified

LOGIC LEVEL COMPATIBLE

e3

30

260

5LN01M-TL-H

Onsemi

N-CHANNEL

SINGLE

YES

.15 W

1

.1 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

.1 A

1

e6

30

260

SI3457DV

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.8 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

4 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.05 ohm

4 A

DUAL

R-PDSO-G6

1

Not Qualified

e3

30

260

NTUD3171PZT5G

Onsemi

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

YES

.2 W

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

.2 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

5 ohm

.2 A

DUAL

R-PDSO-F6

1

Not Qualified

e3

30

260

NTMD4884NFR2G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.3 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

4.7 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.048 ohm

3.3 A

DUAL

R-PDSO-G8

1

Not Qualified

e3

30

260

42 pF

NTZD3155CT5G

Onsemi

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.25 W

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

.54 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.55 ohm

.54 A

DUAL

R-PDSO-F6

1

Not Qualified

e3

30

260

20 pF

VN0300LRL1

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

30 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

1.2 ohm

.2 A

BOTTOM

O-PBCY-T3

Not Qualified

EUROPEAN PART NUMBER

TO-92

e0

25 pF

2N5460ZL1

Onsemi

P-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

135 Cel

SILICON

BOTTOM

O-PBCY-T3

Not Qualified

EUROPEAN PART NUMBER

TO-92

2 pF

NTJD2152PT1

Onsemi

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

YES

.55 W

PLASTIC/EPOXY

SWITCHING

8 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

.775 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin/Lead (Sn/Pb)

.3 ohm

.775 A

DUAL

R-PDSO-G6

Not Qualified

e0

235

40 pF

FDMS3604AS

Onsemi

N-CHANNEL

SERIES, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2.5 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

2

40 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin (Sn)

.008 ohm

13 A

DUAL

R-PDSO-N6

1

DRAIN SOURCE

Not Qualified

e3

30

260

75 pF

2N5462ZL1

Onsemi

P-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

135 Cel

SILICON

BOTTOM

O-PBCY-T3

Not Qualified

EUROPEAN PART NUMBER

TO-92

2 pF

FDMA3027PZ-F130

Onsemi

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

1.4 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

NICKEL PALLADIUM GOLD

.087 ohm

3.3 A

DUAL

S-PDSO-N6

1

DRAIN

MO-229VCCC

e4

30

260

80 pF

MGSF2P02HDT1

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.21 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1.3 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.175 ohm

1.3 A

DUAL

R-PDSO-G6

1

Not Qualified

LOGIC LEVEL COMPATIBLE

e0

235

NTLUD4C26NTBG

Onsemi

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

1.7 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.021 ohm

4.8 A

DUAL

S-PDSO-N6

1

DRAIN

e3

30

260

BS108ZL1

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

.35 W

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

.25 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

8 ohm

.25 A

BOTTOM

O-PBCY-T3

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-92

e0

235

10 pF

MGSF1N02ELT3

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.4 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.75 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.085 ohm

.75 A

DUAL

R-PDSO-G3

1

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-236

e0

235

MGSF3441VT1

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3.3 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.09 ohm

3.3 A

DUAL

R-PDSO-G6

Not Qualified

e0

235

NTLUS3A39PZTBG

Onsemi

P-CHANNEL

SINGLE

YES

2.3 W

1

5.2 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

5.2 A

1

e3

NTHS5402T1

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.7 W

UNSPECIFIED

SWITCHING

30 V

C BEND

RECTANGULAR

ENHANCEMENT MODE

1

4.9 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.035 ohm

4.9 A

DUAL

R-XDSO-C8

1

Not Qualified

e0

235

NTLUD3A50PZTAG

Onsemi

P-CHANNEL

YES

2.2 W

4.4 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

4.4 A

1

e3

30

260

2SK3796-2-TL-E

Onsemi

Tin/Bismuth (Sn/Bi)

1

e6

2N5462RL

Onsemi

P-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

135 Cel

SILICON

BOTTOM

O-PBCY-T3

Not Qualified

EUROPEAN PART NUMBER

TO-92

2 pF

NTLUD3A260PZTBG

Onsemi

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

1.3 W

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

SQUARE

ENHANCEMENT MODE

2

1.7 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.2 ohm

1.3 A

DUAL

S-PDSO-N6

1

DRAIN

Not Qualified

e3

30

260

MMBF5460LT1G

Onsemi

P-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

FET General Purpose Small Signal

JUNCTION

150 Cel

SILICON

TIN

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e3

30

260

2 pF

FDG6308PD87Z

Onsemi

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.4 ohm

.6 A

DUAL

R-PDSO-G6

Not Qualified

J113-D75Z

Onsemi

N-CHANNEL

SINGLE

NO

.4 W

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

150 Cel

SILICON

MATTE TIN

100 ohm

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e3

5 pF

NTTFS4C05NTWG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

33 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

SQUARE

ENHANCEMENT MODE

1

75 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

.0051 ohm

12 A

DUAL

S-PDSO-F5

1

DRAIN

e3

30

260

CPH3455-TL-W

Onsemi

Tin/Bismuth (Sn/Bi)

1

e6

FDS9412

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.5 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

7.9 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.022 ohm

7.9 A

DUAL

R-PDSO-G8

1

Not Qualified

e3

2N5462RL1

Onsemi

P-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

135 Cel

SILICON

BOTTOM

O-PBCY-T3

Not Qualified

EUROPEAN PART NUMBER

TO-92

2 pF

2SK333F

Onsemi

N-CHANNEL

NO

.4 W

FET General Purpose Small Signal

JUNCTION

125 Cel

NTS4001NT1

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

.33 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.27 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

2 ohm

.27 A

DUAL

R-PDSO-G3

1

Not Qualified

e0

235

12 pF

FDMS7621S

Onsemi

N-CHANNEL

SERIES, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.02 ohm

10.1 A

DUAL

R-PDSO-N6

DRAIN SOURCE

31 pF

NTLUS3C18PZTAG

Onsemi

P-CHANNEL

SINGLE

YES

3.83 W

1

7 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

7 A

1

e3

30

260

BS170RLRP

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

.35 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

.5 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

5 ohm

.5 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-226AA

e0

235

MMBF5458D87Z

Onsemi

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

JUNCTION

150 Cel

SILICON

DUAL

R-PDSO-G3

Not Qualified

3 pF

NTMFS4957NT3G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

43 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

70 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.006 ohm

10.2 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

FDMA1430JP

Onsemi

.2 W

.1 A

10 ns

.3 V

2

33 ns

Other Transistors

68

150 Cel

NICKEL PALLADIUM GOLD

1

e4

30

260

NTMFS4701NT3G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.008 ohm

7.7 A

DUAL

R-PDSO-F5

1

DRAIN

Not Qualified

e3

260

2SK333E

Onsemi

N-CHANNEL

NO

.4 W

FET General Purpose Small Signal

JUNCTION

125 Cel

VN2410LZL1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

.35 W

PLASTIC/EPOXY

SWITCHING

240 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

.2 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN SILVER COPPER

10 ohm

.2 A

BOTTOM

O-PBCY-T3

Not Qualified

EUROPEAN PART NUMBER

TO-92

e1

260

20 pF

FDS8672S

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.5 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

18 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL PALLADIUM GOLD

.0048 ohm

18 A

DUAL

R-PDSO-G8

1

Not Qualified

e4

30

260

205 pF

VN2406LRLRE

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

240 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

6 ohm

.2 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e0

20 pF

NTTFS3A08PZTWG

Onsemi

P-CHANNEL

SINGLE

YES

4.9 W

1

22 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

22 A

1

e3

30

260

FDC8886

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.6 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

8 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.023 ohm

6.5 A

DUAL

R-PDSO-G6

1

MO-193AA

e3

30

260

25 pF

FDG316P

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.75 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1.6 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.19 ohm

1.6 A

DUAL

R-PDSO-G6

1

Not Qualified

e3

30

260

Small Signal Field Effect Transistors (FET)

Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.