Onsemi Small Signal Field Effect Transistors (FET) 1,976

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

NTTFS3A08PZTAG

Onsemi

P-CHANNEL

SINGLE

YES

4.9 W

1

22 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

22 A

1

e3

30

260

FDC8884

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.6 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

8 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.023 ohm

6.5 A

DUAL

R-PDSO-G6

1

MO-193AA

e3

30

260

25 pF

2N7000RLRMG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

.35 W

PLASTIC/EPOXY

60 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

.2 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin/Silver/Copper (Sn/Ag/Cu)

5 ohm

.2 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e1

40

260

5 pF

MMBF4118D87Z

Onsemi

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

JUNCTION

150 Cel

SILICON

DUAL

R-PDSO-G3

Not Qualified

1.5 pF

VN0300LRLRA

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

.35 W

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

.2 A

3

CYLINDRICAL

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

1.2 ohm

.2 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e0

235

25 pF

VN2222LLRLRM

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

.4 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

.099 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

7.5 ohm

.15 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e0

235

5 pF

FDS6680

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.5 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

11.5 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.01 ohm

11.5 A

DUAL

R-PDSO-G8

1

Not Qualified

LOGIC LEVEL COMPATIBLE

e3

MMBFJ175LT3G

Onsemi

P-CHANNEL

SINGLE

YES

.225 W

PLASTIC/EPOXY

CHOPPER

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

JUNCTION

150 Cel

SILICON

-55 Cel

MATTE TIN

125 ohm

DUAL

R-PDSO-G3

1

TO-236

e3

30

260

5.5 pF

NTMFS4925NET1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

23.2 W

PLASTIC/EPOXY

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

48 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.001 ohm

16.7 A

DUAL

R-PDSO-F5

3

DRAIN

e3

VN2410LRLRE

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

240 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

10 ohm

.2 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e0

20 pF

BS107RLRE

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

14 ohm

.25 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e0

FDMS3606S

Onsemi

N-CHANNEL

SERIES, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2.5 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

40 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

.008 ohm

13 A

DUAL

R-PDSO-F6

1

DRAIN SOURCE

MO-240AA

e3

30

260

80 pF

FDMA3028N

Onsemi

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

1.5 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

2

3.8 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

NICKEL PALLADIUM GOLD

.068 ohm

3.8 A

DUAL

S-PDSO-N6

1

DRAIN

e4

30

260

45 pF

J113RLRP

Onsemi

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

CHOPPER

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

150 Cel

SILICON

TIN LEAD

100 ohm

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e0

5 pF

MMBF5460LT1

Onsemi

P-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

FET General Purpose Small Signal

JUNCTION

150 Cel

SILICON

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e0

30

235

2 pF

NTMFS4847NAT3G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0062 ohm

11.5 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

VN2222LLRLRAG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

.4 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

.15 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

7.5 ohm

.15 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e1

260

5 pF

FDMS3669S-SN00345

Onsemi

N-CHANNEL

SERIES, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2.5 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

2.5 W

150 Cel

SILICON

-55 Cel

.01 ohm

24 A

DUAL

R-PDSO-F6

1

DRAIN SOURCE

MO-240AA

30

260

55 pF

2N7002LT3H

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

7.5 ohm

.075 A

DUAL

R-PDSO-G3

Not Qualified

TO-236

e3

5 pF

NTMFS4701NT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.008 ohm

7.7 A

DUAL

R-PDSO-F5

DRAIN

Not Qualified

e3

260

NTR3162PT1G

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.25 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2.2 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

.07 ohm

2.2 A

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e3

NOT SPECIFIED

NOT SPECIFIED

NTLUS3A18PZTBG

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

3.8 W

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

8.2 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.018 ohm

5.1 A

DUAL

S-PDSO-N6

1

DRAIN

ULTRA LOW RESISTANCE

e3

30

260

2N5458

Onsemi

N-CHANNEL

SINGLE

NO

.31 W

PLASTIC/EPOXY

SWITCHING

25 V

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

150 Cel

SILICON

Tin/Lead (Sn/Pb)

BOTTOM

O-PBCY-T3

Not Qualified

LOW NOISE

TO-92

e0

30

235

3 pF

MGSF3442XT3

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.4 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1.7 A

6

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.07 ohm

1.7 A

DUAL

R-PDSO-G6

Not Qualified

e0

FDS6699S

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.5 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

21 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.0036 ohm

21 A

DUAL

R-PDSO-G8

1

Not Qualified

e3

30

260

NTR4502PT3

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.4 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1.95 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.2 ohm

1.95 A

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e0

235

2N5457RLRM

Onsemi

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

25 V

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

150 Cel

SILICON

BOTTOM

O-PBCY-T3

Not Qualified

LOW NOISE

TO-92

3 pF

J113RLRM

Onsemi

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

CHOPPER

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

150 Cel

SILICON

TIN LEAD

100 ohm

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e0

5 pF

FDS8812NZ

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.5 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

20 A

8

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.004 ohm

2 A

DUAL

R-PDSO-G8

1

Not Qualified

e3

30

260

870 pF

NTMFS4C808NT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.51 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.00747 ohm

9 A

DUAL

R-PDSO-F5

DRAIN

NOT SPECIFIED

NOT SPECIFIED

39 pF

FDMS3624S

Onsemi

N-CHANNEL

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2.5 W

PLASTIC/EPOXY

SWITCHING

25 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

2

60 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin (Sn)

.005 ohm

17.5 A

DUAL

R-PDSO-N6

1

DRAIN SOURCE

e3

30

260

MMBF5461

Onsemi

P-CHANNEL

SINGLE

YES

.35 W

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

FET General Purpose Small Signal

JUNCTION

150 Cel

SILICON

Tin (Sn)

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

2 pF

NTJD2152PT1G

Onsemi

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

YES

.55 W

PLASTIC/EPOXY

SWITCHING

8 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

.775 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.3 ohm

.775 A

DUAL

R-PDSO-G6

1

Not Qualified

e3

30

260

40 pF

NTMFS4120NT3G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

6.9 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

18 A

5

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin (Sn)

.0045 ohm

11 A

DUAL

R-PDSO-F5

1

DRAIN

Not Qualified

e3

40

260

MMBF4393LT3

Onsemi

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

JUNCTION

150 Cel

SILICON

TIN LEAD

100 ohm

DUAL

R-PDSO-G3

Not Qualified

TO-236AB

e0

3.5 pF

NTJD4158CT2G

Onsemi

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

YES

.27 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

2.5 ohm

.25 A

DUAL

R-PDSO-G6

1

Not Qualified

e3

30

260

12 pF

NTR4503NT1

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.73 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1.5 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.11 ohm

1.5 A

DUAL

R-PDSO-G3

Not Qualified

TO-236AB

e0

235

25 pF

NTZD3155CT5H

Onsemi

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.25 W

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

.54 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.55 ohm

.54 A

DUAL

R-PDSO-F6

1

e3

30

260

20 pF

MMBFJ271

Onsemi

P-CHANNEL

SINGLE

YES

.225 W

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

FET General Purpose Small Signal

JUNCTION

150 Cel

SILICON

TIN

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

NTJD2101PT1

Onsemi

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

8 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.6 ohm

.59 A

DUAL

R-PDSO-G6

Not Qualified

MMBF4392LT3

Onsemi

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

JUNCTION

150 Cel

SILICON

TIN LEAD

60 ohm

DUAL

R-PDSO-G3

Not Qualified

TO-236AB

e0

3.5 pF

VN10LMRLRM

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

60 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

5 ohm

.3 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e0

5 pF

NTHS5441T1G

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.3 W

UNSPECIFIED

SWITCHING

20 V

C BEND

RECTANGULAR

ENHANCEMENT MODE

1

3.9 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.06 ohm

3.9 A

DUAL

R-XDSO-C8

1

Not Qualified

LOGIC LEVEL COMPATIBLE

e3

30

260

2N5458G

Onsemi

N-CHANNEL

SINGLE

NO

.31 W

PLASTIC/EPOXY

SWITCHING

25 V

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

150 Cel

SILICON

TIN SILVER COPPER

BOTTOM

O-PBCY-T3

Not Qualified

LOW NOISE

TO-92

e1

260

3 pF

MMBFJ175

Onsemi

P-CHANNEL

SINGLE

YES

.225 W

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

FET General Purpose Small Signal

JUNCTION

150 Cel

SILICON

MATTE TIN

125 ohm

DUAL

R-PDSO-G3

1

TO-236AB

e3

30

260

MGSF1N02LT3

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.225 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.75 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.09 ohm

.75 A

DUAL

R-PDSO-G3

Not Qualified

TO-236AB

e0

235

2N5461RL1

Onsemi

P-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

135 Cel

SILICON

BOTTOM

O-PBCY-T3

Not Qualified

EUROPEAN PART NUMBER

TO-92

2 pF

NTMD6P02R2

Onsemi

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.75 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

4.8 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.033 ohm

4.8 A

DUAL

R-PDSO-G8

1

Not Qualified

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED

e0

235

450 pF

Small Signal Field Effect Transistors (FET)

Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.