Onsemi Small Signal Field Effect Transistors (FET) 1,976

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

3LP01S-TL-E

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.15 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.1 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

10.4 ohm

.1 A

DUAL

R-PDSO-G3

1

e6

30

260

2N5555RLRE

Onsemi

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

25 V

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

150 Cel

SILICON

TIN LEAD

150 ohm

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e0

1.2 pF

MTD3302T4

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

96 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

30 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.01 ohm

8.3 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

e3

NTMS4705NR2G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.52 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

10 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.01 ohm

7.4 A

DUAL

R-PDSO-G8

1

Not Qualified

e3

30

260

NTMS4935NR2G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin (Sn)

.0051 ohm

10 A

DUAL

R-PDSO-G8

1

Not Qualified

e3

40

260

NTMS10P02R2G

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.4 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

4.5 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.014 ohm

8.8 A

DUAL

R-PDSO-G8

1

Not Qualified

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

e3

30

260

1010 pF

MMDF2N05ZR2

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2 A

8

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.3 ohm

2 A

DUAL

R-PDSO-G8

Not Qualified

LOGIC LEVEL COMPATIBLE

e0

235

NTR0202PLT3

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.225 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.4 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.8 ohm

.4 A

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e0

235

NVLJD4007NZTBG

Onsemi

N-CHANNEL

YES

.755 W

.245 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

.245 A

1

e3

30

260

NVGS3130NT1G

Onsemi

MATTE TIN

1

e3

30

260

NTHD5904NT3

Onsemi

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

1.13 W

UNSPECIFIED

SWITCHING

20 V

C BEND

RECTANGULAR

ENHANCEMENT MODE

2

3.3 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.065 ohm

2.5 A

DUAL

R-XDSO-C8

1

Not Qualified

e0

235

NTHD3133PFT1G

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.1 W

UNSPECIFIED

SWITCHING

20 V

C BEND

RECTANGULAR

ENHANCEMENT MODE

1

3.2 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.08 ohm

3.2 A

DUAL

R-XDSO-C8

1

Not Qualified

e3

30

260

SCH1439-TL-W

Onsemi

TIN BISMUTH

1

e6

260

MMDF6N03HDR2

Onsemi

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

6 A

8

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.035 ohm

6 A

DUAL

R-PDSO-G8

1

Not Qualified

LOGIC LEVEL COMPATIBLE

e0

235

135 pF

3LP01SS-TL-H

Onsemi

P-CHANNEL

SINGLE

YES

.15 W

1

.1 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Bismuth (Sn/Bi)

.1 A

1

e6

3LN01C-TB-H

Onsemi

N-CHANNEL

SINGLE

YES

.25 W

1

.15 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Bismuth (Sn/Bi)

.15 A

1

e6

MPF4856RLRE

Onsemi

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

40 V

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

SILICON

TIN LEAD

25 ohm

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e0

8 pF

MCH3383-TL-H

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1 W

PLASTIC/EPOXY

SWITCHING

12 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

3.5 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN BISMUTH

.069 ohm

3.5 A

DUAL

R-PDSO-F3

1

e6

30

260

J270

Onsemi

P-CHANNEL

SINGLE

NO

.35 W

PLASTIC/EPOXY

CHOPPER

30 V

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

FET General Purpose Small Signal

JUNCTION

150 Cel

SILICON

Tin/Lead (Sn/Pb)

BOTTOM

O-PBCY-W3

Not Qualified

TO-92

e0

8 pF

SFT1423-E

Onsemi

N-CHANNEL

SINGLE

NO

20 W

1

2 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

2 A

e6

MPF990

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1 W

PLASTIC/EPOXY

SWITCHING

90 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

2 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

2 ohm

2 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-226AE

e0

NVJD5121NT1G

Onsemi

MATTE TIN

1

e3

30

260

CPH5901G-TL-E

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN BIPOLAR TRANSISTOR

YES

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

DEPLETION MODE

1

5

SMALL OUTLINE

JUNCTION

SILICON

.05 A

DUAL

R-PDSO-G5

MPF4856ZL1

Onsemi

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

40 V

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

SILICON

TIN LEAD

25 ohm

BOTTOM

O-PBCY-T3

Not Qualified

EUROPEAN PART NUMBER

TO-92

e0

8 pF

NTK4401NT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

3.5 ohm

DUAL

R-PDSO-F3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

MPF990RL1

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

90 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

2 ohm

2 A

BOTTOM

O-PBCY-T3

Not Qualified

EUROPEAN PART NUMBER

TO-92

e0

5LP01SS-TL-H

Onsemi

P-CHANNEL

SINGLE

YES

.15 W

1

.07 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

.07 A

1

e6

30

260

NTLJD3181PZTAG

Onsemi

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

SQUARE

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.1 ohm

3.2 A

DUAL

S-PDSO-N6

1

Not Qualified

e3

SMMBF0201NLT1

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

1 ohm

.3 A

DUAL

R-PDSO-G3

Not Qualified

TO-236AB

e0

NTND3184NZTAG

Onsemi

N-CHANNEL

SEPERATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

YES

1.25 W

PLASTIC/EPOXY

SWITCHING

23 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

2

6

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

NICKEL PALLADIUM GOLD

1.5 ohm

.2 A

BOTTOM

R-PBCC-N6

1

e4

30

260

TF252TH-5-TL-H

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

JUNCTION

150 Cel

SILICON

-55 Cel

TIN BISMUTH

.001 A

DUAL

R-PDSO-F3

1

e6

30

260

MPF930ZL1

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

35 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

1.4 ohm

2 A

BOTTOM

O-PBCY-T3

Not Qualified

EUROPEAN PART NUMBER

TO-92

e0

NTLJD2104PTBG

Onsemi

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2.3 W

PLASTIC/EPOXY

SWITCHING

12 V

NO LEAD

SQUARE

ENHANCEMENT MODE

2

3.5 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.12 ohm

2.4 A

DUAL

S-PDSO-N6

1

DRAIN

Not Qualified

e3

260

5LP01SP

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

NO

.25 W

PLASTIC/EPOXY

SWITCHING

50 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

.07 A

3

IN-LINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

23 ohm

.07 A

SINGLE

R-PSIP-T3

Not Qualified

NTTS2P02R2

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.4 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

SQUARE

ENHANCEMENT MODE

1

2.4 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.09 ohm

2.4 A

DUAL

S-PDSO-G8

Not Qualified

LOGIC LEVEL COMPATIBLE

e0

235

SCH1332-TL-H

Onsemi

P-CHANNEL

SINGLE

YES

1 W

1

2.5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

2.5 A

1

e6

30

260

VN0610LLRLRE

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

5 ohm

.19 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e0

5 pF

J111RL1

Onsemi

N-CHANNEL

SINGLE

NO

.35 W

PLASTIC/EPOXY

CHOPPER

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

150 Cel

SILICON

TIN LEAD

30 ohm

BOTTOM

O-PBCY-T3

Not Qualified

EUROPEAN PART NUMBER

TO-92

e0

235

5 pF

NTMS4N01R2

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.77 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

5.9 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin/Lead (Sn80Pb20)

.04 ohm

3.3 A

DUAL

R-PDSO-G8

Not Qualified

AVALANCHE RATED

e0

NOT SPECIFIED

235

100 pF

NVC6S5A444NLZT2G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN BISMUTH

.078 ohm

3.5 A

DUAL

R-PDSO-G6

1

e6

30

260

AEC-Q101

NTMS3P03R2

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.73 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3.86 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin/Lead (Sn80Pb20)

.085 ohm

2.34 A

DUAL

R-PDSO-G8

1

Not Qualified

AVALANCHE RATED

e0

NOT SPECIFIED

235

135 pF

J111RLRM

Onsemi

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

CHOPPER

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

150 Cel

SILICON

TIN LEAD

30 ohm

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e0

5 pF

JFTJ105D84Z

Onsemi

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

DEPLETION MODE

1

4

SMALL OUTLINE

JUNCTION

150 Cel

SILICON

3 ohm

DUAL

R-PDSO-G4

GATE

Not Qualified

35 pF

NVJS3151PT1G

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

.625 W

PLASTIC/EPOXY

SWITCHING

12 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.06 ohm

2.7 A

DUAL

R-PDSO-G6

1

e3

30

260

AEC-Q101

MCH3333

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.9 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

1.5 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.28 ohm

1.5 A

DUAL

R-PDSO-F3

Not Qualified

SMMBF170LT1

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

5 ohm

.5 A

DUAL

R-PDSO-G3

Not Qualified

TO-236AB

e0

MMDF4C03HDR2

Onsemi

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2.5 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

5.5 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.05 ohm

5.5 A

DUAL

R-PDSO-G8

Not Qualified

LOGIC LEVEL COMPATIBLE

e0

235

135 pF

MPF990ZL1

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

90 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

2 ohm

2 A

BOTTOM

O-PBCY-T3

Not Qualified

EUROPEAN PART NUMBER

TO-92

e0

Small Signal Field Effect Transistors (FET)

Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.