Onsemi Small Signal Field Effect Transistors (FET) 1,976

Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

2N5640RL1

Onsemi

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

150 Cel

SILICON

TIN LEAD

100 ohm

BOTTOM

O-PBCY-T3

Not Qualified

EUROPEAN PART NUMBER

TO-92

e0

4 pF

SFT1305

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

45 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.147 ohm

10 A

SINGLE

R-PSIP-T3

DRAIN

SFT1458-H

Onsemi

TIN BISMUTH

e6

3LP01M-TL-E

Onsemi

P-CHANNEL

SINGLE

YES

.15 W

1

.1 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

.1 A

1

e6

30

260

5HN01M-TL-E

Onsemi

Tin/Bismuth (Sn/Bi)

1

e6

TF252-4-TL-H

Onsemi

Tin/Bismuth (Sn/Bi)

1

e6

CPH5902H-TL-E

Onsemi

TIN BISMUTH

1

e6

30

260

NTHD5903T1G

Onsemi

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2.1 W

UNSPECIFIED

SWITCHING

20 V

C BEND

RECTANGULAR

ENHANCEMENT MODE

2

2.2 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.155 ohm

2.2 A

DUAL

R-XDSO-C8

1

Not Qualified

LOGIC LEVEL COMPATIBLE

e3

30

260

NTGS4111PT2G

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.06 ohm

2.6 A

DUAL

R-PDSO-G6

1

e3

30

260

MPF960RL1

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

1.7 ohm

2 A

BOTTOM

O-PBCY-T3

Not Qualified

EUROPEAN PART NUMBER

TO-92

e0

5HN01SSTL-H

Onsemi

NTLJS3A18PZTXG

Onsemi

P-CHANNEL

SINGLE

YES

1.8 W

1

8.2 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

8.2 A

1

e3

30

260

SFT1341-W

Onsemi

P-CHANNEL

SINGLE

NO

15 W

1

10 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Bismuth (Sn/Bi)

10 A

e6

SFT1440-E

Onsemi

N-CHANNEL

SINGLE

NO

20 W

1

1.5 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Bismuth (Sn/Bi)

1.5 A

e6

MCH3374-TL-E

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1 W

PLASTIC/EPOXY

SWITCHING

12 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

3 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

.07 ohm

3 A

DUAL

R-PDSO-F3

1

e6

30

260

NTGS4111PT1

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.63 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3.7 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin/Lead (Sn/Pb)

.06 ohm

3.7 A

DUAL

R-PDSO-G6

1

Not Qualified

e0

NOT SPECIFIED

235

NTNS41S006PZTCG

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

.121 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

3

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

NICKEL PALLADIUM GOLD

4 ohm

.137 A

BOTTOM

S-PBCC-N3

DRAIN

e4

NTA7002NT1

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

.3 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.154 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

7.5 ohm

.154 A

DUAL

R-PDSO-G3

Not Qualified

e0

235

6 pF

SFT1452-H

Onsemi

N-CHANNEL

SINGLE

NO

26 W

1

3 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Bismuth (Sn/Bi)

3 A

e6

NTNS3C68NZT5G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

.156 W

PLASTIC/EPOXY

SWITCHING

12 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

3

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

NICKEL GOLD PALLADIUM

.16 ohm

.758 A

BOTTOM

R-PBCC-N3

1

DRAIN

30

260

NTGS3441T1G

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1.65 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.09 ohm

1.65 A

DUAL

R-PDSO-G6

1

Not Qualified

e3

40

260

J106

Onsemi

N-CHANNEL

SINGLE

NO

.36 W

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

150 Cel

SILICON

Tin (Sn)

6 ohm

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e3

35 pF

SFT1450

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

40 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.028 ohm

21 A

SINGLE

R-PSIP-T3

DRAIN

TO-251

NTNS41006PZTCG

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

.121 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

3

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

NICKEL PALLADIUM GOLD

4 ohm

.137 A

BOTTOM

S-PBCC-N3

1

DRAIN

e4

260

SFT1443-H

Onsemi

Tin/Bismuth (Sn/Bi)

e6

3LN03SS

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.15 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

.35 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.9 ohm

.35 A

DUAL

R-PDSO-F3

Not Qualified

SCH2825-TL-E

Onsemi

N-CHANNEL

SINGLE

YES

.6 W

1

1.6 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

125 Cel

Tin/Bismuth (Sn/Bi)

1.6 A

1

e6

NTTD2P02R2

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.78 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2.4 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.09 ohm

2.4 A

DUAL

R-PDSO-G8

Not Qualified

e0

NTMS4P01R2

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.38 W

PLASTIC/EPOXY

SWITCHING

12 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2.32 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.045 ohm

3.4 A

DUAL

R-PDSO-G8

1

Not Qualified

e0

235

400 pF

NTR1P02LST1G

Onsemi

TIN

1

e3

30

260

FDFMA2P859T

Onsemi

NOT SPECIFIED

NOT SPECIFIED

SFT1443-TL-H

Onsemi

TIN BISMUTH

1

e6

30

260

NTGS3130NT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.4 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

5.6 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

.024 ohm

4.2 A

DUAL

R-PDSO-G6

1

Not Qualified

e3

40

260

MCH3315

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.9 W

PLASTIC/EPOXY

SWITCHING

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

1 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.76 ohm

1 A

DUAL

R-PDSO-F3

Not Qualified

MPF6659RLRA

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

35 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

1.8 ohm

2 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e0

NTLJS4D9N03HTAG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.4 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.0061 ohm

9.5 A

DUAL

S-PDSO-N3

1

DRAIN

e3

30

260

NTMS4840NR2G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

Tin (Sn)

.024 ohm

5.5 A

DUAL

R-PDSO-G8

1

DRAIN

Not Qualified

e3

NOT SPECIFIED

NOT SPECIFIED

MCH5908G

Onsemi

N-CHANNEL

YES

.3 W

FET General Purpose Small Signal

JUNCTION

150 Cel

J202ZL1

Onsemi

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

40 V

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

150 Cel

SILICON

TIN LEAD

BOTTOM

O-PBCY-T3

Not Qualified

EUROPEAN PART NUMBER

TO-92

e0

5LP01M-TL-E

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

23 ohm

.07 A

DUAL

R-PDSO-G3

SCH1436-TL-H

Onsemi

N-CHANNEL

SINGLE

YES

.8 W

1

1.8 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

1.8 A

1

e6

30

260

MPF6661RLRE

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

90 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

4 ohm

2 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e0

NTZS3151PT5G

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.15 ohm

.86 A

DUAL

R-PDSO-F6

1

Not Qualified

e3

30

260

CPH5802

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.9 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2 A

5

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

125 Cel

SILICON

.145 ohm

2 A

DUAL

R-PDSO-G5

Not Qualified

NUS5531MTR2G

Onsemi

P-CHANNEL

SINGLE WITH BUILT IN BIPOLAR TRANSISTOR AND DIODE

YES

2.1 W

2 A

PLASTIC/EPOXY

SWITCHING

.18 V

12 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150

150 Cel

SILICON

TIN

.05 ohm

4.4 A

DUAL

S-PDSO-N8

DRAIN

Not Qualified

e3

260

MCH3474-TL-W

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

.05 ohm

4 A

DUAL

R-PDSO-F3

1

e6

30

260

5LP01S-TL-E

Onsemi

TIN BISMUTH

1

e6

30

260

MPF6659RL1

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

35 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

1.8 ohm

2 A

BOTTOM

O-PBCY-T3

Not Qualified

EUROPEAN PART NUMBER

TO-92

e0

Small Signal Field Effect Transistors (FET)

Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.