Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Nominal Transition Frequency (fT) | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Rise Time (tr) | Maximum VCEsat | Minimum DS Breakdown Voltage | Terminal Form | Package Shape | Operating Mode | No. of Elements | Maximum Pulsed Drain Current (IDM) | Avalanche Energy Rating (EAS) | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Minimum DC Current Gain (hFE) | Maximum Operating Temperature | Maximum Collector-Base Capacitance | Transistor Element Material | Maximum Collector-Emitter Voltage | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Turn Off Time (toff) | Terminal Finish | Maximum Drain-Source On Resistance | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Maximum Feedback Capacitance (Crss) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Onsemi |
N-CHANNEL |
SINGLE |
NO |
.625 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
THROUGH-HOLE |
ROUND |
DEPLETION MODE |
1 |
3 |
CYLINDRICAL |
Other Transistors |
JUNCTION |
150 Cel |
SILICON |
Tin/Silver/Copper (Sn/Ag/Cu) |
100 ohm |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
TO-92 |
e1 |
40 |
260 |
3.5 pF |
|||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.8 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN BISMUTH |
.104 ohm |
2 A |
DUAL |
R-PDSO-F3 |
1 |
e6 |
30 |
260 |
|||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
YES |
.15 W |
1 |
.3 A |
FET General Purpose Powers |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
TIN |
.3 A |
1 |
e3 |
30 |
260 |
|||||||||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL AND P-CHANNEL |
SEPERATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR |
YES |
.125 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
6 |
CHIP CARRIER |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
NICKEL PALLADIUM GOLD |
1.5 ohm |
.22 A |
BOTTOM |
R-PBCC-N6 |
1 |
e4 |
30 |
260 |
||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.063 ohm |
3 A |
DUAL |
R-PDSO-F3 |
38 pF |
||||||||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
60 V |
THROUGH-HOLE |
ROUND |
ENHANCEMENT MODE |
1 |
3 |
CYLINDRICAL |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
3 ohm |
2 A |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
TO-92 |
e0 |
||||||||||||||||||||||||||
Onsemi |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE AND RESISTOR |
YES |
.15 W |
PLASTIC/EPOXY |
SWITCHING |
50 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
.07 A |
3 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
23 ohm |
.07 A |
DUAL |
R-PDSO-G3 |
Not Qualified |
||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
5 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN BISMUTH |
.052 ohm |
3.5 A |
DUAL |
R-PDSO-G5 |
1 |
e6 |
30 |
260 |
|||||||||||||||||||||||||
Onsemi |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.78 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
GULL WING |
SQUARE |
ENHANCEMENT MODE |
1 |
2.4 A |
8 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.09 ohm |
3 A |
DUAL |
S-PDSO-G8 |
Not Qualified |
e0 |
235 |
|||||||||||||||||||||||
|
Onsemi |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
50 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
23 ohm |
.07 A |
DUAL |
R-PDSO-G3 |
||||||||||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
SWITCHING |
60 V |
THROUGH-HOLE |
ROUND |
ENHANCEMENT MODE |
1 |
3 |
CYLINDRICAL |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN LEAD |
3 ohm |
2 A |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
TO-92 |
e0 |
|||||||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE |
NO |
.625 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
THROUGH-HOLE |
ROUND |
DEPLETION MODE |
1 |
3 |
CYLINDRICAL |
Other Transistors |
JUNCTION |
150 Cel |
SILICON |
Tin/Lead (Sn/Pb) |
100 ohm |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
TO-92 |
e0 |
NOT SPECIFIED |
235 |
3.5 pF |
||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN LEAD |
.032 ohm |
4.3 A |
DUAL |
R-PDSO-G8 |
Not Qualified |
e0 |
175 pF |
|||||||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
4 A |
3 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.052 ohm |
4 A |
DUAL |
R-PDSO-F3 |
Not Qualified |
||||||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
.625 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
GULL WING |
SQUARE |
ENHANCEMENT MODE |
2 |
1.9 A |
8 |
SMALL OUTLINE |
FET General Purpose Powers |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.12 ohm |
1.7 A |
DUAL |
S-PDSO-G8 |
Not Qualified |
LOGIC LEVEL COMPATIBLE |
e0 |
235 |
||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE |
NO |
PLASTIC/EPOXY |
CHOPPER |
THROUGH-HOLE |
ROUND |
DEPLETION MODE |
1 |
3 |
CYLINDRICAL |
JUNCTION |
150 Cel |
SILICON |
TIN LEAD |
30 ohm |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
EUROPEAN PART NUMBER |
TO-92 |
e0 |
5 pF |
||||||||||||||||||||||||||
Onsemi |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.15 W |
PLASTIC/EPOXY |
SWITCHING |
50 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
.07 A |
3 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
22 ohm |
.07 A |
DUAL |
R-PDSO-G3 |
|||||||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1.52 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
10 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.01 ohm |
7.4 A |
DUAL |
R-PDSO-G8 |
1 |
Not Qualified |
e0 |
235 |
||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
1 W |
PLASTIC/EPOXY |
SWITCHING |
90 V |
THROUGH-HOLE |
ROUND |
ENHANCEMENT MODE |
1 |
2 A |
3 |
CYLINDRICAL |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
2 ohm |
2 A |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
TO-92 |
e0 |
|||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.1 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
.05 A |
3 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
10 ohm |
.05 A |
DUAL |
R-PDSO-G3 |
Not Qualified |
e0 |
||||||||||||||||||||||||
Onsemi |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3.5 A |
8 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.1 ohm |
3.5 A |
DUAL |
R-PDSO-G8 |
1 |
Not Qualified |
e0 |
235 |
||||||||||||||||||||||
Onsemi |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.4 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
1.3 A |
3 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.22 ohm |
1.3 A |
DUAL |
R-PDSO-G3 |
Not Qualified |
TO-236AB |
e0 |
235 |
||||||||||||||||||||||
|
Onsemi |
TIN BISMUTH |
1 |
e6 |
|||||||||||||||||||||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
YES |
.31 W |
1 |
.154 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
.154 A |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||||||||||
Onsemi |
P-CHANNEL |
SINGLE |
YES |
1 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 A |
8 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
125 Cel |
SILICON |
.085 ohm |
3 A |
DUAL |
R-PDSO-F8 |
|||||||||||||||||||||||||||
|
Onsemi |
P-CHANNEL |
SINGLE |
YES |
35 W |
1 |
11 A |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
TIN BISMUTH |
11 A |
1 |
e6 |
30 |
260 |
||||||||||||||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 A |
3 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.084 ohm |
3 A |
DUAL |
R-PDSO-F3 |
Not Qualified |
||||||||||||||||||||||||||
Onsemi |
P-CHANNEL |
SINGLE |
YES |
.6 W |
1 |
1.2 A |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
125 Cel |
1.2 A |
|||||||||||||||||||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
.4 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
THROUGH-HOLE |
ROUND |
ENHANCEMENT MODE |
1 |
.19 A |
3 |
CYLINDRICAL |
FET General Purpose Powers |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
5 ohm |
.19 A |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
TO-92 |
e0 |
30 |
235 |
5 pF |
||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE |
NO |
PLASTIC/EPOXY |
SWITCHING |
30 V |
THROUGH-HOLE |
ROUND |
DEPLETION MODE |
1 |
3 |
CYLINDRICAL |
JUNCTION |
SILICON |
TIN LEAD |
60 ohm |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
TO-92 |
e0 |
3.5 pF |
|||||||||||||||||||||||||||
Onsemi |
Other Transistors |
TIN LEAD |
Not Qualified |
e0 |
235 |
||||||||||||||||||||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.8 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3.5 A |
6 |
SMALL OUTLINE |
FET General Purpose Powers |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN BISMUTH |
.064 ohm |
3.5 A |
DUAL |
R-PDSO-F6 |
1 |
e6 |
30 |
260 |
|||||||||||||||||||||
Onsemi |
N-CHANNEL |
YES |
.2 W |
FET General Purpose Small Signal |
JUNCTION |
150 Cel |
|||||||||||||||||||||||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE |
NO |
PLASTIC/EPOXY |
SWITCHING |
25 V |
THROUGH-HOLE |
ROUND |
DEPLETION MODE |
1 |
3 |
CYLINDRICAL |
JUNCTION |
150 Cel |
SILICON |
TIN LEAD |
150 ohm |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
TO-92 |
e0 |
1.2 pF |
||||||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE |
NO |
PLASTIC/EPOXY |
SWITCHING |
30 V |
THROUGH-HOLE |
ROUND |
DEPLETION MODE |
1 |
3 |
CYLINDRICAL |
JUNCTION |
SILICON |
TIN LEAD |
100 ohm |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
TO-92 |
e0 |
3.5 pF |
|||||||||||||||||||||||||||
|
Onsemi |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1.6 W |
PLASTIC/EPOXY |
SWITCHING |
8 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
4.6 A |
6 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Tin (Sn) |
.031 ohm |
4.6 A |
DUAL |
R-PDSO-G6 |
1 |
Not Qualified |
ULTRA LOW RESISTANCE |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE |
NO |
PLASTIC/EPOXY |
40 V |
THROUGH-HOLE |
ROUND |
DEPLETION MODE |
1 |
3 |
CYLINDRICAL |
JUNCTION |
150 Cel |
SILICON |
TIN LEAD |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
TO-92 |
e0 |
|||||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
YES |
1 W |
1 |
2 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
TIN BISMUTH |
2 A |
1 |
e6 |
30 |
260 |
|||||||||||||||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE |
NO |
.4 W |
PLASTIC/EPOXY |
CHOPPER |
THROUGH-HOLE |
ROUND |
DEPLETION MODE |
1 |
3 |
CYLINDRICAL |
Other Transistors |
JUNCTION |
150 Cel |
SILICON |
TIN LEAD |
50 ohm |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
TO-92 |
e0 |
235 |
5 pF |
||||||||||||||||||||||||
|
Onsemi |
P-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
1.1 W |
UNSPECIFIED |
SWITCHING |
20 V |
C BEND |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
2.1 A |
8 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN |
.155 ohm |
2.1 A |
DUAL |
R-XDSO-C8 |
1 |
Not Qualified |
e3 |
30 |
260 |
50 pF |
|||||||||||||||||||
|
Onsemi |
TIN BISMUTH |
1 |
e6 |
30 |
260 |
|||||||||||||||||||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.3 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
12.2 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Matte Tin (Sn) - annealed |
.0061 ohm |
9.1 A |
DUAL |
R-PDSO-G8 |
1 |
Not Qualified |
e3 |
40 |
260 |
||||||||||||||||||||
|
Onsemi |
Tin/Bismuth (Sn/Bi) |
1 |
e6 |
|||||||||||||||||||||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
5 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN BISMUTH |
.052 ohm |
3.5 A |
DUAL |
R-PDSO-G5 |
1 |
e6 |
|||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
12.5 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Matte Tin (Sn) - annealed |
.0084 ohm |
8 A |
DUAL |
R-PDSO-G8 |
1 |
Not Qualified |
e3 |
40 |
260 |
||||||||||||||||||||
Onsemi |
N-CHANNEL |
SINGLE |
NO |
PLASTIC/EPOXY |
SWITCHING |
25 V |
THROUGH-HOLE |
ROUND |
DEPLETION MODE |
1 |
3 |
CYLINDRICAL |
JUNCTION |
150 Cel |
SILICON |
TIN LEAD |
150 ohm |
BOTTOM |
O-PBCY-T3 |
Not Qualified |
EUROPEAN PART NUMBER |
TO-92 |
e0 |
1.2 pF |
|||||||||||||||||||||||||
|
Onsemi |
P-CHANNEL |
SINGLE |
YES |
.15 W |
1 |
.1 A |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
Tin/Bismuth (Sn/Bi) |
.1 A |
1 |
e6 |
|||||||||||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL AND P-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR |
YES |
.27 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
2.5 ohm |
.25 A |
DUAL |
R-PDSO-G6 |
1 |
e3 |
30 |
260 |
12 pF |
AEC-Q101 |
Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.
Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.
The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.
Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.