Onsemi Small Signal Field Effect Transistors (FET) 1,976

Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

2SK596S-B

Onsemi

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

NTMS4118NR2

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

.006 ohm

9 A

DUAL

R-PDSO-G8

Not Qualified

e0

500 pF

2SK233G

Onsemi

N-CHANNEL

SINGLE

NO

.4 W

PLASTIC/EPOXY

AMPLIFIER

80 V

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

.4 W

125 Cel

SILICON

BOTTOM

O-PBCY-T3

TO-92

2.5 pF

NTMSD3P303R2

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2.34 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin/Lead (Sn80Pb20)

.085 ohm

2.34 A

DUAL

R-PDSO-G8

Not Qualified

e0

NOT SPECIFIED

235

135 pF

NTHD5904NT1G

Onsemi

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

1.13 W

UNSPECIFIED

SWITCHING

20 V

C BEND

RECTANGULAR

ENHANCEMENT MODE

2

3.3 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.065 ohm

2.5 A

DUAL

R-XDSO-C8

1

Not Qualified

e3

30

260

3LP03M

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.15 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.25 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

1.9 ohm

.25 A

DUAL

R-PDSO-G3

Not Qualified

NTND31015NZTAG

Onsemi

N-CHANNEL

SEPERATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

YES

.125 W

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

2

6

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

NICKEL PALLADIUM GOLD

1.5 ohm

.2 A

BOTTOM

R-PBCC-N6

1

e4

30

260

NTR1P02T1

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.4 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.18 ohm

1 A

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e0

235

MCH3414

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.8 W

PLASTIC/EPOXY

SWITCHING

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

1 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.9 ohm

1 A

DUAL

R-PDSO-F3

Not Qualified

MPF4393RL

Onsemi

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

SILICON

TIN LEAD

100 ohm

BOTTOM

O-PBCY-T3

Not Qualified

EUROPEAN PART NUMBER

TO-92

e0

3.5 pF

MPF6660RL1

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

3 ohm

2 A

BOTTOM

O-PBCY-T3

Not Qualified

EUROPEAN PART NUMBER

TO-92

e0

NTHD5905T1

Onsemi

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.6 W

UNSPECIFIED

SWITCHING

8 V

C BEND

RECTANGULAR

ENHANCEMENT MODE

2

3 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.09 ohm

3 A

DUAL

R-XDSO-C8

1

Not Qualified

e0

235

MCH3475-TL-E

Onsemi

N-CHANNEL

SINGLE

YES

.8 W

1

1.8 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

1.8 A

1

e6

30

260

2N5640RLRM

Onsemi

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

150 Cel

SILICON

TIN LEAD

100 ohm

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e0

4 pF

2SK669-AC

Onsemi

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

AMPLIFIER

50 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

.1 A

SINGLE

R-PSIP-T3

Not Qualified

LOW NOISE

MPF6659RL

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

35 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

1.8 ohm

2 A

BOTTOM

O-PBCY-T3

Not Qualified

EUROPEAN PART NUMBER

TO-92

e0

SCH1333-TL-H

Onsemi

TIN BISMUTH

1

e6

NTZS3151PT1H

Onsemi

P-CHANNEL

SINGLE

YES

.21 W

1

.86 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

.86 A

1

e3

30

260

3LN03M

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.15 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.35 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.9 ohm

.35 A

DUAL

R-PDSO-G3

Not Qualified

MPF4856RLRP

Onsemi

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

40 V

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

SILICON

TIN LEAD

25 ohm

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e0

8 pF

2SK233F

Onsemi

N-CHANNEL

SINGLE

NO

.4 W

PLASTIC/EPOXY

AMPLIFIER

80 V

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

.4 W

125 Cel

SILICON

BOTTOM

O-PBCY-T3

TO-92

2.5 pF

NTLJS2103PTAG

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

3.3 W

PLASTIC/EPOXY

SWITCHING

12 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

5.9 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.04 ohm

5.9 A

DUAL

S-PDSO-N6

1

DRAIN

Not Qualified

e3

260

NTMS4937NR2G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

11.2 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

.0065 ohm

8.6 A

DUAL

R-PDSO-G8

1

Not Qualified

e3

40

260

MMDF3N04HDR2

Onsemi

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

3.4 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin/Lead (Sn/Pb)

.08 ohm

3.4 A

DUAL

R-PDSO-G8

1

Not Qualified

LOGIC LEVEL COMPATIBLE, AVALANCHE ENERGY RATED

e0

30

235

96 pF

NTLJS3180PZTAG

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.05 ohm

3.5 A

DUAL

S-PDSO-N6

1

DRAIN

Not Qualified

e3

2N5555

Onsemi

N-CHANNEL

SINGLE

NO

.31 W

PLASTIC/EPOXY

SWITCHING

25 V

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

150 Cel

SILICON

TIN LEAD

150 ohm

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e0

235

1.2 pF

SCH1439

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0072 ohm

3.5 A

DUAL

R-PDSO-F6

J112RL1

Onsemi

N-CHANNEL

SINGLE

NO

.4 W

PLASTIC/EPOXY

CHOPPER

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

150 Cel

SILICON

TIN LEAD

50 ohm

BOTTOM

O-PBCY-T3

Not Qualified

EUROPEAN PART NUMBER

TO-92

e0

235

5 pF

MTDF1N03HDR2

Onsemi

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.625 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

SQUARE

ENHANCEMENT MODE

2

1.9 A

8

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.12 ohm

2 A

DUAL

S-PDSO-G8

1

Not Qualified

LOGIC LEVEL COMPATIBLE

e0

235

NTMSD2P102LR2

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2.3 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.09 ohm

2.3 A

DUAL

R-PDSO-G8

1

Not Qualified

LOGIC LEVEL COMPATIBLE

e0

235

175 pF

SFT1445-TL-H

Onsemi

TIN BISMUTH

1

e6

30

260

SCH1333-TL-W

Onsemi

MCH5908H

Onsemi

N-CHANNEL

YES

.3 W

FET General Purpose Small Signal

JUNCTION

150 Cel

J202

Onsemi

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

40 V

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

SILICON

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

TF262TH-4-TL-H

Onsemi

TIN BISMUTH

1

e6

30

260

NTTS2P02R2G

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.4 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

SQUARE

ENHANCEMENT MODE

1

2.4 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.09 ohm

2.4 A

DUAL

S-PDSO-G8

1

Not Qualified

LOGIC LEVEL COMPATIBLE

e3

30

260

NTMS4700NR2

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

.01 ohm

8.6 A

DUAL

R-PDSO-G8

1

Not Qualified

e0

235

MCH3316

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1 W

PLASTIC/EPOXY

SWITCHING

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

1.2 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.53 ohm

1.2 A

DUAL

R-PDSO-F3

Not Qualified

NTLJS4149PTBG

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

3.2 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

4.5 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.062 ohm

2.7 A

DUAL

S-PDSO-N6

1

DRAIN

Not Qualified

e3

260

NTND31211PZTAG

Onsemi

P-CHANNEL

SEPERATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

YES

.125 W

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

2

6

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

NICKEL PALLADIUM GOLD

5 ohm

.127 A

BOTTOM

R-PBCC-N6

1

e4

30

260

2N5640RL

Onsemi

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

150 Cel

SILICON

TIN LEAD

100 ohm

BOTTOM

O-PBCY-T3

Not Qualified

EUROPEAN PART NUMBER

TO-92

e0

4 pF

MCH3477-TL-H

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN BISMUTH

.038 ohm

4.5 A

DUAL

R-PDSO-F3

1

e6

30

260

MPF960ZL1

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

1.7 ohm

2 A

BOTTOM

O-PBCY-T3

Not Qualified

EUROPEAN PART NUMBER

TO-92

e0

FDFMA3P029Z

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.4 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

NICKEL PALLADIUM GOLD

.087 ohm

3.3 A

DUAL

S-PDSO-N6

1

DRAIN

MO-229VCCC

e4

30

260

80 pF

MCH6601-TL-E

Onsemi

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

DEPLETION MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

10.4 ohm

.2 A

DUAL

R-PDSO-F6

J111ZL1

Onsemi

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

CHOPPER

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

150 Cel

SILICON

TIN LEAD

30 ohm

BOTTOM

O-PBCY-T3

Not Qualified

EUROPEAN PART NUMBER

TO-92

e0

5 pF

SCH1334-TL-H

Onsemi

P-CHANNEL

SINGLE

YES

.8 W

1

1.6 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Bismuth (Sn/Bi)

1.6 A

1

e6

MPF910RL1

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.5 A

BOTTOM

O-PBCY-T3

Not Qualified

EUROPEAN PART NUMBER

TO-92

e0

Small Signal Field Effect Transistors (FET)

Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.