Onsemi Small Signal Field Effect Transistors (FET) 1,976

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

MPF910RL

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.5 A

BOTTOM

O-PBCY-T3

Not Qualified

EUROPEAN PART NUMBER

TO-92

e0

MCH3383-TL-W

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1 W

PLASTIC/EPOXY

SWITCHING

12 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN BISMUTH

.069 ohm

3.5 A

DUAL

R-PDSO-F3

1

e6

30

260

NTLJD3182FZTAG

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

.144 ohm

2.2 A

DUAL

S-PDSO-N6

DRAIN

Not Qualified

e3

MMSF3P03HDR1

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.1 ohm

4.6 A

DUAL

R-PDSO-G8

Not Qualified

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED

190 pF

SFT1350-TL-H

Onsemi

Tin/Bismuth (Sn/Bi)

1

e6

TF256-4-TL-H

Onsemi

Tin/Bismuth (Sn/Bi)

1

e6

NTGS3443T1

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.5 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2.2 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin/Lead (Sn80Pb20)

.065 ohm

2.2 A

DUAL

R-PDSO-G6

1

Not Qualified

e0

30

235

VEC2415-TL-W

Onsemi

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

1 W

PLASTIC/EPOXY

SWITCHING

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

.08 ohm

3 A

DUAL

R-PDSO-F8

1

e6

30

260

SMMBF0202PLT1

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

1.4 ohm

.3 A

DUAL

R-PDSO-G3

Not Qualified

TO-236

e0

CPH5905G-TL-E

Onsemi

TIN BISMUTH

1

e6

30

260

J112RL1G

Onsemi

N-CHANNEL

SINGLE

NO

.4 W

PLASTIC/EPOXY

CHOPPER

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

150 Cel

SILICON

TIN SILVER COPPER

50 ohm

BOTTOM

O-PBCY-T3

Not Qualified

EUROPEAN PART NUMBER

TO-92

e1

260

5 pF

NTND1K5N021ZTAG

Onsemi

N-CHANNEL

SEPERATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

YES

.125 W

PLASTIC/EPOXY

SWITCHING

23 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

2

6

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

NICKEL PALLADIUM GOLD

1.5 ohm

.2 A

BOTTOM

R-PBCC-N6

1

e4

30

260

FDV045P20L

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.6 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

Tin (Sn)

.108 ohm

1.15 A

DUAL

R-PDSO-G3

1

e3

30

260

151 pF

NTLJS5D0N03CTAG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.4 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.00725 ohm

11.2 A

DUAL

S-PDSO-N3

1

DRAIN

e3

30

260

EMH2409-TL-H

Onsemi

TIN BISMUTH

1

e6

NVGS4111PT1G

Onsemi

MATTE TIN

1

e3

30

260

SCH1434-TL-H

Onsemi

N-CHANNEL

SINGLE

YES

.8 W

1

2 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Bismuth (Sn/Bi)

2 A

1

e6

MCH3484-TL-H

Onsemi

N-CHANNEL

SINGLE

YES

1 W

1

4.5 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

4.5 A

1

e6

30

260

MCH3382-TL-H

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.8 W

PLASTIC/EPOXY

12 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

2 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin/Bismuth (Sn/Bi)

.198 ohm

2 A

DUAL

R-PDSO-F3

1

e6

6LP04MH

Onsemi

P-CHANNEL

SINGLE

YES

.6 W

1

.1 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

.1 A

MMSF10N03ZR2

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.5 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

10 A

8

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.013 ohm

10 A

DUAL

R-PDSO-G8

Not Qualified

LOGIC LEVEL COMPATIBLE

e0

110 pF

J202RL1

Onsemi

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

40 V

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

150 Cel

SILICON

TIN LEAD

BOTTOM

O-PBCY-T3

Not Qualified

EUROPEAN PART NUMBER

TO-92

e0

SCH1331-TL-W

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

12 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

.084 ohm

3 A

DUAL

R-PDSO-F6

1

e6

260

3LP01C-TB-E

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.25 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.1 A

3

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

10.4 ohm

.1 A

DUAL

R-PDSO-G3

1

TO-236AB

e6

260

NTR1P02LT1H

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

1.3 A

DUAL

R-PDSO-G3

1

TO-236

e3

30

260

SCH1331-TL-H

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1 W

PLASTIC/EPOXY

SWITCHING

12 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

3 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

.084 ohm

3 A

DUAL

R-PDSO-F6

1

e6

30

260

FDM6296

Onsemi

NOT SPECIFIED

NOT SPECIFIED

NTMS4700NR2G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.01 ohm

8.6 A

DUAL

R-PDSO-G8

1

Not Qualified

e3

260

SMMBF170LT3

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

5 ohm

.5 A

DUAL

R-PDSO-G3

Not Qualified

TO-236AB

e0

5HN01SS-TL-E

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

.15 W

PLASTIC/EPOXY

SWITCHING

50 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

.15 W

SILICON

TIN BISMUTH

7.5 ohm

.1 A

DUAL

R-PDSO-F3

1

e6

260

MPF4392ZL1

Onsemi

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

SILICON

TIN LEAD

60 ohm

BOTTOM

O-PBCY-T3

Not Qualified

EUROPEAN PART NUMBER

TO-92

e0

3.5 pF

NTMS4704NR2G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.0095 ohm

7.6 A

DUAL

R-PDSO-G8

1

Not Qualified

e3

260

NDDP010N25AZ-1H

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

52 W

PLASTIC/EPOXY

SWITCHING

250 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

10 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

.42 ohm

10 A

SINGLE

R-PSIP-T3

DRAIN

TO-251

e6

FDJ1032C

Onsemi

NOT SPECIFIED

NOT SPECIFIED

VEC2415-TL-E

Onsemi

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

1 W

PLASTIC/EPOXY

SWITCHING

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

.08 ohm

3 A

DUAL

R-PDSO-F8

1

e6

30

260

SFT1445-H

Onsemi

TIN BISMUTH

e6

NTMS4P01R2G

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

12 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.045 ohm

3.4 A

DUAL

R-PDSO-G8

1

Not Qualified

400 pF

SFT1305TL

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

45 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

3

IN-LINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.147 ohm

10 A

SINGLE

R-PSIP-T3

DRAIN

NTMS3P03R2G

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.73 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3.86 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin (Sn)

.085 ohm

2.34 A

DUAL

R-PDSO-G8

1

Not Qualified

AVALANCHE RATED

e3

40

260

135 pF

MCH6444-TL-W

Onsemi

Tin/Bismuth (Sn/Bi)

1

e6

2SK536-TB-E

Onsemi

TIN BISMUTH

1

e6

30

260

PCP1402-TD-H

Onsemi

N-CHANNEL

SINGLE

YES

3.5 W

1

1.2 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

1.2 A

1

e6

30

260

NVMS4816NR2G

Onsemi

TIN

1

e3

30

260

MCH3322

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1 W

PLASTIC/EPOXY

SWITCHING

100 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

.6 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

1.7 ohm

.6 A

DUAL

R-PDSO-F3

Not Qualified

NTR1P02T3G

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.4 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

.18 ohm

1 A

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e3

40

260

TF412T5G

Onsemi

N-CHANNEL

SINGLE

YES

UNSPECIFIED

30 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

3

CHIP CARRIER

JUNCTION

50 Cel

SILICON

NICKEL GOLD PALLADIUM

.01 A

BOTTOM

R-XBCC-N3

1

GATE

30

260

1.1 pF

2N5555RLRA

Onsemi

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

25 V

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

150 Cel

SILICON

TIN LEAD

150 ohm

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e0

1.2 pF

3LN01SS-TL-H

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.15 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

.15 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin/Bismuth (Sn/Bi)

3.7 ohm

.15 A

DUAL

R-PDSO-F3

1

e6

Small Signal Field Effect Transistors (FET)

Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.