Onsemi Small Signal Field Effect Transistors (FET) 1,976

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

MCH6344-TL-H

Onsemi

TIN BISMUTH

1

e6

30

260

MTSF3N02HDR2

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.8 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

SQUARE

ENHANCEMENT MODE

1

3.8 A

8

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.04 ohm

4 A

DUAL

S-PDSO-G8

1

Not Qualified

LOGIC LEVEL COMPATIBLE

e0

235

1HN04CH-TL-W

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

.6 W

PLASTIC/EPOXY

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.27 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

8 ohm

.27 A

DUAL

R-PDSO-G3

1

TO-236

e6

30

260

SSN1N45B

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

450 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

4.25 ohm

.5 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

NOT SPECIFIED

NOT SPECIFIED

8.5 pF

MCH3421

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.9 W

PLASTIC/EPOXY

SWITCHING

100 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

.8 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

1.2 ohm

.8 A

DUAL

R-PDSO-F3

Not Qualified

NTLJS1102PTAG

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

3.3 W

PLASTIC/EPOXY

SWITCHING

8 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

6.2 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.036 ohm

3.7 A

DUAL

S-PDSO-N6

1

DRAIN

Not Qualified

e3

260

MPF930RLRA

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

35 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

1.4 ohm

2 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e0

NVA4153NT1G

Onsemi

MATTE TIN

1

e3

30

260

MCH3474-TL-E

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

Tin/Bismuth (Sn/Bi)

.05 ohm

4 A

DUAL

R-PDSO-F3

1

e6

EMH2604-TL-H

Onsemi

TIN BISMUTH

1

e6

NTLJS3D9N03CTAG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.4 W

PLASTIC/EPOXY

SWITCHING

30 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.0049 ohm

10.7 A

DUAL

S-PDSO-N3

1

DRAIN

e3

30

260

CPH6636R-TL-W

Onsemi

TIN BISMUTH

1

e6

30

260

J112RLRP

Onsemi

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

CHOPPER

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

150 Cel

SILICON

TIN LEAD

50 ohm

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e0

5 pF

FDZ451PZ

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.3 W

PLASTIC/EPOXY

SWITCHING

20 V

BALL

SQUARE

ENHANCEMENT MODE

1

4

GRID ARRAY

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN SILVER COPPER

.14 ohm

2.6 A

BOTTOM

S-PBGA-B4

1

e1

260

70 pF

NTNS1K5N021ZTCG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

.125 W

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

1.8 ohm

.22 A

DUAL

R-PDSO-N3

DRAIN

NOT SPECIFIED

NOT SPECIFIED

FC701

Onsemi

N-CHANNEL

YES

.2 W

FET General Purpose Small Signal

JUNCTION

NTLJS3D0N02P8TAG

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.4 W

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.0055 ohm

12.1 A

DUAL

S-PDSO-N3

DRAIN

ULTRA LOW RESISTANCE

NOT SPECIFIED

NOT SPECIFIED

3LN01C-TB-E

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.25 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.15 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

3.7 ohm

.15 A

DUAL

R-PDSO-G3

1

TO-236AB

e6

30

260

MCH3475

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.8 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

1.8 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.18 ohm

1.8 A

DUAL

R-PDSO-F3

3SK263-5-TG-E

Onsemi

6HP04MH

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

.6 W

PLASTIC/EPOXY

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

4.2 ohm

.37 A

DUAL

R-PDSO-F3

4.1 pF

MPF6659ZL1

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

35 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

1.8 ohm

2 A

BOTTOM

O-PBCY-T3

Not Qualified

EUROPEAN PART NUMBER

TO-92

e0

NVGS3443T1G

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

4.4 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.065 ohm

2.2 A

DUAL

R-PDSO-G6

1

ULTRA LOW RESISTANCE

e3

30

260

AEC-Q101

TF414T5G

Onsemi

N-CHANNEL

YES

.1 W

Other Transistors

JUNCTION

150 Cel

NICKEL PALLADIUM GOLD

1

e4

30

260

2N5640ZL1

Onsemi

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

JUNCTION

150 Cel

SILICON

TIN LEAD

100 ohm

BOTTOM

O-PBCY-T3

Not Qualified

EUROPEAN PART NUMBER

TO-92

e0

4 pF

MCH3481-TL-H

Onsemi

Tin/Bismuth (Sn/Bi)

1

e6

NTLJD3183CZTAG

Onsemi

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

SQUARE

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.086 ohm

2.6 A

DUAL

S-PDSO-N6

1

DRAIN

Not Qualified

e3

FDZ375P

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.7 W

PLASTIC/EPOXY

SWITCHING

20 V

BALL

RECTANGULAR

ENHANCEMENT MODE

1

3.7 A

4

GRID ARRAY

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

.078 ohm

3.7 A

BOTTOM

R-PBGA-B4

1

Not Qualified

e1

30

260

150 pF

TF256TH-3-TL-H

Onsemi

Tin/Bismuth (Sn/Bi)

1

e6

MPF910ZL1

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

3

CYLINDRICAL

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.5 A

BOTTOM

O-PBCY-T3

Not Qualified

EUROPEAN PART NUMBER

TO-92

e0

NTNS41006PZT5G

Onsemi

NOT SPECIFIED

NOT SPECIFIED

2N5639

Onsemi

N-CHANNEL

SINGLE

NO

.31 W

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

150 Cel

SILICON

TIN LEAD

60 ohm

BOTTOM

O-PBCY-T3

Not Qualified

TO-226AA

e0

235

4 pF

MCH6662-TL-W

Onsemi

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.8 W

PLASTIC/EPOXY

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN BISMUTH

.16 ohm

2 A

DUAL

R-PDSO-F6

1

e6

30

260

MCH6626

Onsemi

N-CHANNEL AND P-CHANNEL

YES

.8 W

1.6 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

1.6 A

NTGS3441PT1G

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.11 ohm

1.8 A

DUAL

R-PDSO-G6

1

Not Qualified

e3

30

260

NTR0202PLT1

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.225 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.4 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.8 ohm

.4 A

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e0

235

MCH3377-TL-H

Onsemi

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1 W

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

3 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin/Bismuth (Sn/Bi)

.083 ohm

3 A

DUAL

R-PDSO-F3

1

e6

NVBF170LT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.225 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.5 A

3

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

5 ohm

.5 A

DUAL

R-PDSO-G3

1

TO-236AB

e3

30

260

NTMS4503NR2

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.5 W

PLASTIC/EPOXY

SWITCHING

28 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

9 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Tin/Lead (Sn80Pb20)

.008 ohm

9 A

DUAL

R-PDSO-G8

1

Not Qualified

e0

NOT SPECIFIED

235

MPF930RLRE

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

NO

1 W

PLASTIC/EPOXY

SWITCHING

35 V

THROUGH-HOLE

ROUND

ENHANCEMENT MODE

1

2 A

3

CYLINDRICAL

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

1.4 ohm

2 A

BOTTOM

O-PBCY-T3

Not Qualified

TO-92

e0

235

TF202THC-5-TL-H

Onsemi

N-CHANNEL

YES

.1 W

Other Transistors

JUNCTION

150 Cel

TIN BISMUTH

1

e6

30

260

NTLJS3A18PZTWG

Onsemi

P-CHANNEL

SINGLE

YES

1.8 W

1

8.2 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

8.2 A

1

e3

30

260

3LP01M-TL-H

Onsemi

P-CHANNEL

SINGLE

YES

.15 W

1

.1 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Bismuth (Sn/Bi)

.1 A

1

e6

FDMJ1023PZ

Onsemi

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

1.4 W

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

2

2.9 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Nickel/Palladium/Gold (Ni/Pd/Au)

.112 ohm

.0029 A

DUAL

R-PDSO-N6

1

Not Qualified

e4

30

260

70 pF

3LN01M-TL-H

Onsemi

N-CHANNEL

SINGLE

YES

.15 W

1

.15 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

.15 A

1

e6

30

260

NTLJD3181PZTBG

Onsemi

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

SQUARE

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.1 ohm

3.2 A

DUAL

S-PDSO-N6

1

Not Qualified

e3

2N5638RLRAG

Onsemi

N-CHANNEL

SINGLE

NO

.31 W

PLASTIC/EPOXY

SWITCHING

30 V

THROUGH-HOLE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

150 Cel

SILICON

TIN SILVER COPPER

30 ohm

BOTTOM

O-PBCY-T3

Not Qualified

TO-226AA

e1

260

4 pF

SCH1343-TL-H

Onsemi

P-CHANNEL

SINGLE

YES

1 W

1

3.5 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Bismuth (Sn/Bi)

3.5 A

1

e6

Small Signal Field Effect Transistors (FET)

Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.