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Manufacturer | Onsemi |
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Manufacturer's Part Number | NTHD4401PT1G |
Description | P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.1 W; Package Style (Meter): SMALL OUTLINE; No. of Terminals: 8; |
Datasheet | NTHD4401PT1G Datasheet |
In Stock | 1,280 |
NAME | DESCRIPTION |
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Package Body Material: | UNSPECIFIED |
Maximum Time At Peak Reflow Temperature (s): | 30 |
Configuration: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Drain Current (ID): | 2.1 A |
Sub-Category: | Other Transistors |
Surface Mount: | YES |
Terminal Finish: | TIN |
No. of Terminals: | 8 |
Maximum Power Dissipation (Abs): | 1.1 W |
Terminal Position: | DUAL |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-XDSO-C8 |
No. of Elements: | 2 |
Package Shape: | RECTANGULAR |
Terminal Form: | C BEND |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 150 Cel |
Maximum Drain-Source On Resistance: | .155 ohm |
Moisture Sensitivity Level (MSL): | 1 |
Maximum Feedback Capacitance (Crss): | 50 pF |
Polarity or Channel Type: | P-CHANNEL |
JESD-609 Code: | e3 |
Minimum DS Breakdown Voltage: | 20 V |
Qualification: | Not Qualified |
Maximum Drain Current (Abs) (ID): | 2.1 A |
Peak Reflow Temperature (C): | 260 |