Onsemi - NTHD4401PT1G

NTHD4401PT1G by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NTHD4401PT1G
Description P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.1 W; Package Style (Meter): SMALL OUTLINE; No. of Terminals: 8;
Datasheet NTHD4401PT1G Datasheet
In Stock1,280
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 2.1 A
Sub-Category: Other Transistors
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 8
Maximum Power Dissipation (Abs): 1.1 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-XDSO-C8
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: C BEND
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: .155 ohm
Moisture Sensitivity Level (MSL): 1
Maximum Feedback Capacitance (Crss): 50 pF
Polarity or Channel Type: P-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 20 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): 2.1 A
Peak Reflow Temperature (C): 260
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Pricing (USD)

Qty. Unit Price Ext. Price
1,280 $0.228 $291.840

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