MTDF1N02HDR2 by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	MTDF1N02HDR2
Description	N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .625 W; Terminal Form: GULL WING; Transistor Application: SWITCHING;
Datasheet	MTDF1N02HDR2 Datasheet
In Stock	246

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	1.7 A
Sub-Category:	FET General Purpose Powers
Surface Mount:	YES
Terminal Finish:	TIN LEAD
No. of Terminals:	8
Maximum Power Dissipation (Abs):	.625 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	S-PDSO-G8
No. of Elements:	2
Package Shape:	SQUARE
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	.12 ohm
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e0
Minimum DS Breakdown Voltage:	20 V
Qualification:	Not Qualified
Additional Features:	LOGIC LEVEL COMPATIBLE
Maximum Drain Current (Abs) (ID):	1.9 A
Peak Reflow Temperature (C):	235

Pricing (USD)

Qty.	Unit Price	Ext. Price
246	-	-

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

CONNECTOR ACCESSORY; Terminal Type: CRIMP; Removal Tools: M81969/14-01; Associated Military - Specifications: MIL-DTL-38999; IEC Conformity: NO; MIL-Connector Accessory Name: CONTACT;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Terminal Form: GULL WING; Terminal Position: DUAL;

OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;

OPA2227UA by Texas Instruments is a dual operational amplifier with low-offset voltage of 200 uV and bias current of 0.01 uA. It operates at temperatures ranging from -40 to 85 °C, making it suitable for industrial applications requiring precise signal amplification. With a unity gain bandwidth of 8000 kHz, this op amp is ideal for high-frequency circuit designs.

Diodes Inc. 2N7002-7-F is a N-channel FET with 60V DS breakdown voltage, 0.115A max drain current, and 13.5 ohm RDS(on). Ideal for switching applications in enhancement mode operation. Features Gull Wing terminals, small outline package style, and operates up to 150°C.