Onsemi - NTNS41006PZTCG

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NTNS41006PZTCG by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number NTNS41006PZTCG
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .121 W; Peak Reflow Temperature (C): 260; Minimum DS Breakdown Voltage: 30 V;
Datasheet NTNS41006PZTCG Datasheet
In Stock1,915
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): .137 A
Surface Mount: YES
Terminal Finish: NICKEL PALLADIUM GOLD
No. of Terminals: 3
Maximum Power Dissipation (Abs): .121 W
Terminal Position: BOTTOM
Package Style (Meter): CHIP CARRIER
JESD-30 Code: S-PBCC-N3
No. of Elements: 1
Package Shape: SQUARE
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: 4 ohm
Moisture Sensitivity Level (MSL): 1
Other Names: 2156-NTNS41006PZTCG-488
Polarity or Channel Type: P-CHANNEL
JESD-609 Code: e4
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 30 V
Peak Reflow Temperature (C): 260
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Pricing (USD)

Qty. Unit Price Ext. Price
1,915 $0.098 $187.670

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