Toshiba Small Signal Field Effect Transistors (FET) 1,975

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

2SK3321GR

Toshiba

YES

PLASTIC/EPOXY

GULL WING

RECTANGULAR

3

SMALL OUTLINE

DUAL

R-PDSO-G3

Not Qualified

2SK3582TK-B

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

.1 W

PLASTIC/EPOXY

FLAT

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

Other Transistors

JUNCTION

125 Cel

SILICON

Tin/Lead (Sn/Pb)

.00034 A

DUAL

R-PDSO-F3

Not Qualified

e0

SSM3J15FS(T5LNSN,F

Toshiba

P-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

12 ohm

.1 A

DUAL

R-PDSO-G3

SSM3K15TE(TE85L,F)

Toshiba

SSM6L40TU

Toshiba

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.122 ohm

1.6 A

DUAL

R-PDSO-F6

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

SSM3J35AFS

Toshiba

NOT SPECIFIED

NOT SPECIFIED

SSM3K16TE(TE85,L,F)

Toshiba

SSM3K15FV(TL3AP,ZE

Toshiba

SSM3K48FU

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

5.4 ohm

.1 A

DUAL

R-PDSO-G3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

SSM6N36FE

Toshiba

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

YES

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.85 ohm

.5 A

DUAL

R-PDSO-F6

Not Qualified

30

260

SSM3J110TU

Toshiba

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.8 W

PLASTIC/EPOXY

SWITCHING

12 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

2.3 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.094 ohm

2.3 A

DUAL

R-PDSO-F3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

SSM3J15FS(T5LIMASF

Toshiba

P-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

12 ohm

.1 A

DUAL

R-PDSO-G3

SSM3K15FS(T5LPSE,F

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

7 ohm

.1 A

DUAL

R-PDSO-G3

SSM6K407TU,LF(T

Toshiba

NOT SPECIFIED

NOT SPECIFIED

SSM6J216FE(TPL3,F)

Toshiba

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.75 W

PLASTIC/EPOXY

SWITCHING

12 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

4.8 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

.75 W

150 Cel

SILICON

.032 ohm

4.8 A

DUAL

R-PDSO-F6

1040 pF

SSM3J09FUTE85L

Toshiba

P-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

.15 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.2 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

6 ohm

.2 A

DUAL

R-PDSO-G3

NOT SPECIFIED

NOT SPECIFIED

SSM3K17FU(T5LMMATF

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

PLASTIC/EPOXY

SWITCHING

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

40 ohm

.1 A

DUAL

R-PDSO-G3

SSM3J09FU(T5LPED,F

Toshiba

P-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

6 ohm

.2 A

DUAL

R-PDSO-G3

SSM3K36FS,LF(T

Toshiba

SSM3J35CTCL3F(T

Toshiba

2SK1830,LF(T

Toshiba

SSM3J317T

Toshiba

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.107 ohm

3.6 A

DUAL

R-PDSO-G3

Not Qualified

2SK1826

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

.2 W

PLASTIC/EPOXY

SWITCHING

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.05 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

50 ohm

.05 A

DUAL

R-PDSO-G3

Not Qualified

TO-236

e0

TPN11006PL

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

61 W

PLASTIC/EPOXY

SWITCHING

60 V

FLAT

SQUARE

ENHANCEMENT MODE

1

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.0114 ohm

26 A

DUAL

S-PDSO-F8

DRAIN

55 pF

2SK370-BL

Toshiba

N-CHANNEL

SINGLE

NO

.2 W

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

DEPLETION MODE

1

3

IN-LINE

Other Transistors

JUNCTION

125 Cel

SILICON

TIN LEAD

SINGLE

R-PSIP-T3

Not Qualified

LOW NOISE

e0

SSM3K7002FU

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

.15 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.2 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

3 ohm

.2 A

DUAL

R-PDSO-G3

Not Qualified

e0

2SK1825

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

NO

.3 W

PLASTIC/EPOXY

SWITCHING

50 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

.05 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

50 ohm

.05 A

SINGLE

R-PSIP-T3

Not Qualified

e0

2SK3376TK-B

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

.1 W

PLASTIC/EPOXY

FLAT

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

Other Transistors

JUNCTION

125 Cel

SILICON

Tin/Lead (Sn/Pb)

.00034 A

DUAL

R-PDSO-F3

Not Qualified

e0

2SK1830TE85L

Toshiba

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

40 ohm

.05 A

DUAL

R-PDSO-G3

Not Qualified

2SK3376TK-A

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

.1 W

PLASTIC/EPOXY

FLAT

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

Other Transistors

JUNCTION

125 Cel

SILICON

Tin/Lead (Sn/Pb)

.00024 A

DUAL

R-PDSO-F3

Not Qualified

e0

SSM3K35MFV

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

4 ohm

.18 A

DUAL

R-PDSO-F3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

SSM6P15FU(T5LHLS,F

Toshiba

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

12 ohm

.1 A

DUAL

R-PDSO-G6

2SK1829

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

.1 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.05 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

40 ohm

.05 A

DUAL

R-PDSO-G3

Not Qualified

e0

SSM3K7002BFU

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

2.1 ohm

.2 A

DUAL

R-PDSO-G3

Not Qualified

SSM3K09FU(T5L,PP,F

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

1.7 ohm

.4 A

DUAL

R-PDSO-G3

SSM6N56FE

Toshiba

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.25 W

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.235 ohm

.8 A

DUAL

R-PDSO-F6

1

260

6 pF

2SK710TPE4

Toshiba

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

DEPLETION MODE

1

3

IN-LINE

JUNCTION

125 Cel

SILICON

SINGLE

R-PSIP-T3

Not Qualified

LOW NOISE

NOT SPECIFIED

240

3 pF

SSM6N05FU

Toshiba

N-CHANNEL

SEPERATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

YES

.3 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

.4 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

1.2 ohm

.4 A

DUAL

R-PDSO-G6

Not Qualified

e0

SSM6L14FE

Toshiba

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

YES

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.24 ohm

.8 A

DUAL

R-PDSO-F6

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

SSM6N15FU(T5LHLS,F

Toshiba

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

7 ohm

.1 A

DUAL

R-PDSO-G6

SSM6L05FU

Toshiba

N-CHANNEL AND P-CHANNEL

SEPERATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

YES

.3 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

.2 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

1.2 ohm

.4 A

DUAL

R-PDSO-G6

Not Qualified

e0

SSM3K131TU

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.0276 ohm

6 A

DUAL

R-PDSO-F3

Not Qualified

30

260

SSM3K09FU,LF(T

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE AND RESISTOR

YES

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

1.7 ohm

.4 A

DUAL

R-PDSO-G3

NOT SPECIFIED

NOT SPECIFIED

2SK367-O

Toshiba

N-CHANNEL

SINGLE

NO

.2 W

PLASTIC/EPOXY

AMPLIFIER

THROUGH-HOLE

RECTANGULAR

DEPLETION MODE

1

3

IN-LINE

Other Transistors

JUNCTION

125 Cel

SILICON

SINGLE

R-PSIP-T3

Not Qualified

SSM6K202FE

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.5 W

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

2.3 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.085 ohm

2.3 A

DUAL

R-PDSO-F6

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

2SK368OTE85L

Toshiba

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

JUNCTION

125 Cel

SILICON

DUAL

R-PDSO-G3

Not Qualified

TO-236

2SK1875-VTE85L

Toshiba

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

DEPLETION MODE

1

3

SMALL OUTLINE

JUNCTION

125 Cel

SILICON

DUAL

R-PDSO-G3

Not Qualified

3 pF

SSM3J120TU

Toshiba

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.8 W

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

4 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.038 ohm

4 A

DUAL

R-PDSO-F3

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

Small Signal Field Effect Transistors (FET)

Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.