Toshiba - SSM6J216FE(TPL3,F)

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SSM6J216FE(TPL3,F) by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number SSM6J216FE(TPL3,F)
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .75 W; Maximum Feedback Capacitance (Crss): 1040 pF; Package Style (Meter): SMALL OUTLINE;
Datasheet SSM6J216FE(TPL3,F) Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Feedback Capacitance (Crss): 1040 pF
Maximum Drain Current (ID): 4.8 A
Sub-Category: Other Transistors
Polarity or Channel Type: P-CHANNEL
Surface Mount: YES
No. of Terminals: 6
Minimum DS Breakdown Voltage: 12 V
Maximum Power Dissipation (Abs): .75 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F6
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (Abs) (ID): 4.8 A
Maximum Power Dissipation Ambient: .75 W
Maximum Drain-Source On Resistance: .032 ohm
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