Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Nominal Transition Frequency (fT) | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Rise Time (tr) | Maximum VCEsat | Minimum DS Breakdown Voltage | Terminal Form | Package Shape | Operating Mode | No. of Elements | Maximum Pulsed Drain Current (IDM) | Avalanche Energy Rating (EAS) | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Minimum DC Current Gain (hFE) | Maximum Operating Temperature | Maximum Collector-Base Capacitance | Transistor Element Material | Maximum Collector-Emitter Voltage | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Turn Off Time (toff) | Terminal Finish | Maximum Drain-Source On Resistance | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Maximum Feedback Capacitance (Crss) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
Matte Tin (Sn) - annealed |
2.5 ohm |
.26 A |
DUAL |
R-PDSO-G3 |
1 |
TO-236 |
e3 |
30 |
260 |
||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
YES |
PLASTIC/EPOXY |
AMPLIFIER |
GULL WING |
RECTANGULAR |
DEPLETION MODE |
1 |
3 |
SMALL OUTLINE |
JUNCTION |
SILICON |
TIN BISMUTH |
.05 A |
DUAL |
R-PDSO-G3 |
1 |
LOW NOISE |
TO-236AB |
e6 |
30 |
260 |
|||||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.56 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
.87 A |
3 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN |
.44 ohm |
.87 A |
DUAL |
R-PDSO-G3 |
1 |
Not Qualified |
e3 |
30 |
260 |
||||||||||||||||||||
|
STMicroelectronics |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.5 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 A |
4 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.1 ohm |
4 A |
DUAL |
R-PDSO-G4 |
3 |
DRAIN |
Not Qualified |
e3 |
250 |
||||||||||||||||||||
|
Taiwan Semiconductor |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.357 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
.357 W |
150 Cel |
SILICON |
-55 Cel |
TIN |
2 ohm |
.3 A |
DUAL |
R-PDSO-G3 |
3 |
Not Qualified |
e3 |
30 |
260 |
6 pF |
|||||||||||||||||||
|
Micro Commercial Components |
N-CHANNEL |
SINGLE |
YES |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
MATTE TIN |
13.5 ohm |
.115 A |
DUAL |
R-PDSO-G3 |
1 |
Not Qualified |
e3 |
10 |
260 |
5 pF |
|||||||||||||||||||||||
Linear Integrated Systems |
N-CHANNEL |
SINGLE |
NO |
PLASTIC/EPOXY |
WIRE |
ROUND |
DEPLETION MODE |
1 |
3 |
CYLINDRICAL |
METAL-OXIDE SEMICONDUCTOR |
135 Cel |
SILICON |
MATTE TIN |
BOTTOM |
O-PBCY-W3 |
Not Qualified |
TO-92 |
e3 |
||||||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
YES |
.225 W |
PLASTIC/EPOXY |
SWITCHING |
GULL WING |
RECTANGULAR |
DEPLETION MODE |
1 |
3 |
SMALL OUTLINE |
Other Transistors |
JUNCTION |
150 Cel |
SILICON |
Tin (Sn) |
DUAL |
R-PDSO-G3 |
1 |
Not Qualified |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
3 pF |
|||||||||||||||||||||||
Toshiba |
|||||||||||||||||||||||||||||||||||||||||||||||||
|
Onsemi |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
50 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
Matte Tin (Sn) - annealed |
10 ohm |
.13 A |
DUAL |
R-PDSO-G3 |
1 |
TO-236 |
e3 |
10 |
260 |
|||||||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL AND P-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
1 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.7 ohm |
1.03 A |
DUAL |
R-PDSO-F6 |
1 |
e3 |
30 |
260 |
4.9 pF |
|||||||||||||||||||||
|
Zetex Plc |
N-CHANNEL |
SINGLE |
NO |
PLASTIC/EPOXY |
SWITCHING |
240 V |
WIRE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
IN-LINE |
METAL-OXIDE SEMICONDUCTOR |
200 Cel |
SILICON |
MATTE TIN |
6 ohm |
.26 A |
SINGLE |
R-PSIP-W3 |
1 |
Not Qualified |
e3 |
|||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
2 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
7.5 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.022 ohm |
7.5 A |
DUAL |
R-PDSO-G8 |
1 |
Not Qualified |
e3 |
30 |
260 |
||||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SEPARATE, 2 ELEMENTS |
YES |
2.13 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
8 |
SMALL OUTLINE |
FET General Purpose Powers |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.25 ohm |
.0014 A |
DUAL |
R-PDSO-G8 |
1 |
e3 |
30 |
260 |
||||||||||||||||||||||
Onsemi |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.225 W |
PLASTIC/EPOXY |
SWITCHING |
50 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
.1 A |
3 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Tin/Lead (Sn/Pb) |
10 ohm |
.13 A |
DUAL |
R-PDSO-G3 |
1 |
Not Qualified |
TO-236AB |
e0 |
30 |
235 |
||||||||||||||||||||
|
Fairchild Semiconductor |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
2 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
3.5 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
.1 ohm |
3.5 A |
DUAL |
R-PDSO-G8 |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||
|
Onsemi |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.625 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
.35 A |
3 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
1.2 ohm |
.35 A |
DUAL |
R-PDSO-F3 |
1 |
Not Qualified |
ESD PROTECTION |
e3 |
30 |
260 |
|||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
YES |
.35 W |
PLASTIC/EPOXY |
SWITCHING |
GULL WING |
RECTANGULAR |
DEPLETION MODE |
1 |
3 |
SMALL OUTLINE |
Other Transistors |
JUNCTION |
150 Cel |
SILICON |
TIN |
8 ohm |
DUAL |
R-PDSO-G3 |
1 |
Not Qualified |
e3 |
30 |
260 |
15 pF |
||||||||||||||||||||||
|
Onsemi |
P-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
.3 W |
PLASTIC/EPOXY |
SWITCHING |
12 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
.7 A |
6 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.27 ohm |
.7 A |
DUAL |
R-PDSO-G6 |
1 |
Not Qualified |
e3 |
30 |
260 |
||||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
806 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
1.81 A |
3 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.12 ohm |
1.8 A |
DUAL |
R-PDSO-G3 |
1 |
Not Qualified |
e3 |
30 |
260 |
||||||||||||||||||||
|
ROHM |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.2 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
.1 A |
3 |
SMALL OUTLINE |
FET General Purpose Powers |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN SILVER COPPER |
8 ohm |
.1 A |
DUAL |
R-PDSO-G3 |
1 |
Not Qualified |
e1 |
10 |
260 |
||||||||||||||||||||
|
Fairchild Semiconductor |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1.6 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
4.5 A |
6 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.053 ohm |
4.5 A |
DUAL |
R-PDSO-G6 |
1 |
Not Qualified |
e3 |
||||||||||||||||||||||
|
Vishay Intertechnology |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
5 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
.0183 ohm |
14 A |
DUAL |
R-PDSO-G8 |
MS-012AA |
NOT SPECIFIED |
NOT SPECIFIED |
270 pF |
|||||||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
.2 W |
PLASTIC/EPOXY |
SWITCHING |
50 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
3.5 ohm |
.2 A |
DUAL |
R-PDSO-G6 |
e3 |
260 |
8 pF |
AEC-Q101 |
||||||||||||||||||||||
|
Alpha & Omega Semiconductor |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
3.1 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
12 A |
8 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.013 ohm |
12 A |
DUAL |
R-PDSO-G8 |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.5 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
1.4 A |
3 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.11 ohm |
1.4 A |
DUAL |
R-PDSO-G3 |
1 |
Not Qualified |
FAST SWITCHING |
e3 |
30 |
260 |
23 pF |
||||||||||||||||||
|
Onsemi |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
4 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.185 ohm |
1.7 A |
DUAL |
R-PDSO-G4 |
1 |
DRAIN |
Not Qualified |
TO-261AA |
e3 |
30 |
260 |
||||||||||||||||||||||
|
ROHM |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
12 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.062 ohm |
3 A |
DUAL |
R-PDSO-G3 |
1 |
e3 |
10 |
260 |
|||||||||||||||||||||||||
|
Vishay Intertechnology |
N-CHANNEL AND P-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
3.1 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
C BEND |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
4 A |
8 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.036 ohm |
4 A |
DUAL |
R-PDSO-C8 |
1 |
e3 |
|||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.5 W |
PLASTIC/EPOXY |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
.23 A |
3 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
5 ohm |
.23 A |
DUAL |
R-PDSO-G3 |
e3 |
4.5 pF |
AEC-Q101 |
|||||||||||||||||||||||
|
Vishay Intertechnology |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.35 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
.185 A |
3 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
6 ohm |
.185 A |
DUAL |
R-PDSO-G3 |
1 |
Not Qualified |
ESD PROTECTION, LOW THRESHOLD |
TO-236 |
e3 |
30 |
260 |
||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
YES |
PLASTIC/EPOXY |
AMPLIFIER |
GULL WING |
RECTANGULAR |
DEPLETION MODE |
1 |
3 |
SMALL OUTLINE |
JUNCTION |
SILICON |
TIN BISMUTH |
.05 A |
DUAL |
R-PDSO-G3 |
1 |
LOW NOISE |
TO-236AB |
e6 |
30 |
260 |
|||||||||||||||||||||||||
Vishay Intertechnology |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
40 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN LEAD |
.082 ohm |
2.3 A |
DUAL |
R-PDSO-G3 |
Not Qualified |
TO-236AB |
e0 |
||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1.6 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
6.3 A |
6 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.025 ohm |
6.3 A |
DUAL |
R-PDSO-G6 |
1 |
Not Qualified |
ULTRA-LOW RESISTANCE |
e3 |
30 |
260 |
90 pF |
|||||||||||||||||
|
Onsemi |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
.3 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
.7 A |
6 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.4 ohm |
.7 A |
DUAL |
R-PDSO-G6 |
1 |
Not Qualified |
e3 |
30 |
260 |
||||||||||||||||||||
|
Diodes Incorporated |
P-CHANNEL |
SINGLE |
NO |
PLASTIC/EPOXY |
SWITCHING |
100 V |
WIRE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
IN-LINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
MATTE TIN |
8 ohm |
.23 A |
SINGLE |
R-PSIP-W3 |
Not Qualified |
e3 |
30 |
260 |
|||||||||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1.7 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
2.5 A |
6 |
SMALL OUTLINE |
FET General Purpose Powers |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.08 ohm |
2.8 A |
DUAL |
R-PDSO-G6 |
1 |
Not Qualified |
LOW THRESHOLD |
e3 |
30 |
260 |
|||||||||||||||||||
|
Diodes Incorporated |
P-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
40 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
7.6 A |
8 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
Matte Tin (Sn) |
.045 ohm |
5.8 A |
DUAL |
R-PDSO-G8 |
1 |
e3 |
30 |
260 |
|||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
55 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.0575 ohm |
5.1 A |
SINGLE |
R-PSSO-G3 |
1 |
DRAIN |
Not Qualified |
AVALANCHE RATED, HIGH RELIABILITY |
TO-261AA |
e3 |
30 |
260 |
|||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
55 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.825 ohm |
.54 A |
DUAL |
R-PDSO-G3 |
1 |
Not Qualified |
LOGIC LEVEL COMPATIBLE, AVALANCHE RATED |
e3 |
10 pF |
|||||||||||||||||||||||
|
Vishay Intertechnology |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.3 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
2.7 A |
3 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.19 ohm |
2.7 A |
DUAL |
R-PDSO-G3 |
1 |
Not Qualified |
TO-236AB |
e3 |
30 |
260 |
25 pF |
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|
Vishay Intertechnology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
6 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
19 A |
8 |
SMALL OUTLINE |
FET General Purpose Powers |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.009 ohm |
19 A |
DUAL |
R-PDSO-G8 |
1 |
Not Qualified |
MS-012AA |
e3 |
30 |
260 |
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Diodes Incorporated |
P-CHANNEL |
SINGLE |
NO |
PLASTIC/EPOXY |
SWITCHING |
240 V |
WIRE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
IN-LINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
Matte Tin (Sn) |
15 ohm |
.2 A |
SINGLE |
R-PSIP-W3 |
Not Qualified |
e3 |
NOT SPECIFIED |
NOT SPECIFIED |
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|
Diodes Incorporated |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
50 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
MATTE TIN |
10 ohm |
.18 A |
DUAL |
R-PDSO-G3 |
1 |
HIGH RELIABILITY |
e3 |
260 |
AEC-Q101 |
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|
Onsemi |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1.6 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3.5 A |
6 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.08 ohm |
3.5 A |
DUAL |
R-PDSO-G6 |
1 |
Not Qualified |
e3 |
30 |
260 |
|||||||||||||||||||
|
Vishay Intertechnology |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
.27 W |
PLASTIC/EPOXY |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.385 ohm |
.66 A |
DUAL |
R-PDSO-G6 |
1 |
Not Qualified |
e3 |
30 |
260 |
||||||||||||||||||||||
|
Vishay Intertechnology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
100 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
PURE MATTE TIN |
.0088 ohm |
18.4 A |
DUAL |
R-PDSO-G8 |
1 |
MS-012AA |
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|
Vishay Intertechnology |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
3 W |
PLASTIC/EPOXY |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
9.8 A |
8 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.011 ohm |
9.8 A |
DUAL |
R-PDSO-G8 |
1 |
MS-012AA |
e3 |
Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.
Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.
The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.
Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.