Small Signal Field Effect Transistors (FET)

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard

SI2318CDS-T1-BE3

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.1 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.042 ohm

5.6 A

DUAL

R-PDSO-G3

1

TO-236AB

e3

30

260

30 pF

ZVN2106ASTZ

Diodes Incorporated

N-CHANNEL

SINGLE

NO

.7 W

PLASTIC/EPOXY

SWITCHING

60 V

WIRE

RECTANGULAR

ENHANCEMENT MODE

1

.45 A

3

IN-LINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

2 ohm

.45 A

SINGLE

R-PSIP-W3

Not Qualified

e3

30

260

FDY301NZ

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.625 W

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

.2 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

5 ohm

.2 A

DUAL

R-PDSO-F3

1

Not Qualified

ESD PROTECTION

e3

30

260

IRFL9110PBF

Vishay Intertechnology

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

3.1 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1.1 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

2 W

150 Cel

SILICON

-55 Cel

MATTE TIN

1.2 ohm

1.1 A

SINGLE

R-PSSO-G3

DRAIN

Not Qualified

AVALANCHE RATED

TO-261AA

e3

18 pF

SI2343CDS-T1-GE3

Vishay Intertechnology

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.5 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

5.9 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.045 ohm

5.9 A

DUAL

R-PDSO-G3

1

TO-236

e3

30

260

SI4850EY-T1-GE3

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

3.3 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

6 A

8

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Matte Tin (Sn)

.022 ohm

6 A

DUAL

R-PDSO-G8

1

Not Qualified

e3

30

260

2SK3666-3-TB-E

Onsemi

TIN BISMUTH

1

e6

30

260

FDS4897C

Onsemi

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

6.2 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.029 ohm

6.2 A

DUAL

R-PDSO-G8

1

Not Qualified

e3

30

260

BSD840NH6327XTSA1

Infineon Technologies

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.4 ohm

3.5 A

DUAL

R-PDSO-G6

1

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

e3

DMN62D0UW-7

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.47 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

2 ohm

.34 A

DUAL

R-PDSO-G3

1

HIGH RELIABILITY

e3

260

AEC-Q101

SI1029X-T1-GE3

Vishay Intertechnology

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.28 W

PLASTIC/EPOXY

SWITCHING

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

.305 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

1.4 ohm

.305 A

DUAL

R-PDSO-F6

1

Not Qualified

LOW THRESHOLD

e3

30

260

BSS169IXTSA1

Infineon Technologies

NOT SPECIFIED

NOT SPECIFIED

FDN359AN_NL

Fairchild Semiconductor

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.5 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2.7 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.046 ohm

2.7 A

DUAL

R-PDSO-G3

1

Not Qualified

LOGIC LEVEL COMPATIBLE

e3

RYC002N05T316

ROHM

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.2 W

PLASTIC/EPOXY

SWITCHING

50 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.2 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN SILVER COPPER

2.8 ohm

.2 A

DUAL

R-PDSO-G3

1

Not Qualified

e1

10

260

SSM3J356R,LF(B

Toshiba

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1 W

PLASTIC/EPOXY

SWITCHING

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

6 A

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

.4 ohm

2 A

DUAL

R-PDSO-F3

25 pF

2N7002TRPBFREE

Central Semiconductor

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.35 W

PLASTIC/EPOXY

AMPLIFIER

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.115 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

.35 W

150 Cel

SILICON

-65 Cel

MATTE TIN

7.5 ohm

.115 A

DUAL

R-PDSO-G3

1

e3

30

260

5 pF

BSR92PH6327XTSA1

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

250 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

11 ohm

.14 A

DUAL

R-PDSO-G3

1

AVALANCHE RATED

e3

8 pF

AEC-Q101

ZVN4310A

Diodes Incorporated

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

100 V

WIRE

ROUND

ENHANCEMENT MODE

1

.9 A

3

CYLINDRICAL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.5 ohm

.9 A

BOTTOM

O-PBCY-W3

Not Qualified

e3

260

30 pF

DMP2104LP-7

Diodes Incorporated

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.5 W

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

1.5 A

2

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

NICKEL PALLADIUM GOLD

.15 ohm

1.5 A

SINGLE

R-PSSO-N2

1

DRAIN

Not Qualified

HIGH RELIABILITY

e4

30

260

60 pF

NDS355AN_NL

Fairchild Semiconductor

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.5 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1.7 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.085 ohm

1.7 A

DUAL

R-PDSO-G3

1

Not Qualified

e3

SI2356DS-T1-BE3

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.7 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN

.051 ohm

4.3 A

DUAL

R-PDSO-G3

1

TO-236AB

e3

30

260

17 pF

TPHR6503PL

Toshiba

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

30 V

FLAT

SQUARE

ENHANCEMENT MODE

1

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.00089 ohm

150 A

DUAL

S-PDSO-F5

DRAIN

XP262N7002TR-G

Torex Semiconductor

NOT SPECIFIED

NOT SPECIFIED

NTGS4141NT1G

Onsemi

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

5 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

.025 ohm

3.5 A

DUAL

R-PDSO-G6

1

Not Qualified

e3

40

260

FDN339AN_NL

Fairchild Semiconductor

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.5 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.035 ohm

3 A

DUAL

R-PDSO-G3

1

Not Qualified

e3

FQT1N80TF_WS

Fairchild Semiconductor

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.1 W

PLASTIC/EPOXY

SWITCHING

800 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.2 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

20 ohm

.0002 A

DUAL

R-PDSO-G4

1

DRAIN

e3

30

260

5 pF

DMN26D0UT-7

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.3 W

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.23 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

3 ohm

.23 A

DUAL

R-PDSO-G3

1

Not Qualified

HIGH RELIABILITY

e3

30

260

PMV250EPEA

NXP Semiconductors

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.24 ohm

1.5 A

DUAL

R-PDSO-G3

1

LOGIC LEVEL COMPATIBLE

TO-236AB

e3

30

260

AEC-Q101; IEC-60134

PMV55ENEAR

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.06 ohm

3.1 A

DUAL

R-PDSO-G3

1

TO-236AB

e3

30

260

AEC-Q101; IEC-60134

2N7002TA

Diodes Incorporated

N-CHANNEL

SINGLE

YES

.33 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.115 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

7.5 ohm

.115 A

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

5 pF

SSM6N7002KFULF(T

Toshiba

BSR316PH6327XTSA1

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

1.8 ohm

.36 A

DUAL

R-PDSO-G3

1

AVALANCHE RATED

e3

40

260

20 pF

AEC-Q101

BST82,215

NXP Semiconductors

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.3 W

PLASTIC/EPOXY

SWITCHING

80 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.175 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

10 ohm

.175 A

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

6 pF

SI4464DY-T1-E3

Vishay Intertechnology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

2.5 W

PLASTIC/EPOXY

SWITCHING

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1.7 A

8

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Pure Matte Tin (Sn) - annealed

.24 ohm

1.7 A

DUAL

R-PDSO-G8

1

Not Qualified

30

260

FDMB2307NZ

Onsemi

N-CHANNEL

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2.2 W

PLASTIC/EPOXY

SWITCHING

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

2

9.7 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

NICKEL PALLADIUM GOLD

9.7 A

DUAL

R-PDSO-N6

1

DRAIN

e4

30

260

320 pF

PMV60ENEAR

Nexperia

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN

.075 ohm

3 A

DUAL

R-PDSO-G3

1

LOGIC LEVEL COMPATIBLE

TO-236AB

e3

30

260

21 pF

AEC-Q101; IEC-60134

AO4485

Alpha & Omega Semiconductor

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

1.7 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

.015 ohm

10 A

DUAL

R-PDSO-G8

NOT SPECIFIED

NOT SPECIFIED

180 pF

BSO130P03SHXUMA1

Infineon Technologies

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.013 ohm

9.2 A

DUAL

R-PDSO-G8

3

Not Qualified

LOGIC LEVEL COMPATIBLE

e3

870 pF

EM6K34T2CR

ROHM

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.15 W

PLASTIC/EPOXY

SWITCHING

50 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

2.8 ohm

.2 A

DUAL

R-PDSO-F6

NOT SPECIFIED

NOT SPECIFIED

3 pF

NTMFS4C10NT1G-001

Onsemi

N-CHANNEL

SINGLE

YES

23.6 W

1

46 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

46 A

NX7002BKSX

Nexperia

N-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

3.2 ohm

.24 A

DUAL

R-PDSO-G6

1

LOGIC LEVEL COMPATIBLE

40

260

IEC-60134

SI2337DS-T1-GE3

Vishay Intertechnology

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

2.5 W

PLASTIC/EPOXY

80 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2.2 A

3

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.27 ohm

.0012 A

DUAL

R-PDSO-G3

1

Not Qualified

TO-236

e3

30

260

SI4435DDY-T1-E3

Vishay Intertechnology

P-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

5 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

11.4 A

8

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.024 ohm

8.1 A

DUAL

R-PDSO-G8

1

e3

30

260

FDC6327C-F169

Onsemi

TN2106K1-G

Microchip Technology

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.36 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.28 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

2.5 ohm

.28 A

DUAL

R-PDSO-G3

1

Not Qualified

LOW THRESHOLD, LOGIC LEVEL COMPATIBLE

TO-236AB

e3

40

260

8 pF

2N7002Q-7-F

Diodes Incorporated

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.54 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

.21 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

5 ohm

.17 A

DUAL

R-PDSO-G3

1

HIGH RELIABILITY

e3

30

260

5 pF

AEC-Q101

DMC2990UDJ-7

Diodes Incorporated

N-CHANNEL AND P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

.35 W

PLASTIC/EPOXY

SWITCHING

20 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

6

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

.35 W

150 Cel

SILICON

-55 Cel

MATTE TIN

.99 ohm

.31 A

DUAL

R-PDSO-F6

1

HIGH RELIABILITY

e3

30

260

AEC-Q101

FDC6306P_NL

Fairchild Semiconductor

P-CHANNEL

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

YES

PLASTIC/EPOXY

SWITCHING

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

2

1.9 A

6

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.17 ohm

1.9 A

DUAL

R-PDSO-G6

1

Not Qualified

e3

Small Signal Field Effect Transistors (FET)

Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.