Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Nominal Transition Frequency (fT) | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Rise Time (tr) | Maximum VCEsat | Minimum DS Breakdown Voltage | Terminal Form | Package Shape | Operating Mode | No. of Elements | Maximum Pulsed Drain Current (IDM) | Avalanche Energy Rating (EAS) | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Minimum DC Current Gain (hFE) | Maximum Operating Temperature | Maximum Collector-Base Capacitance | Transistor Element Material | Maximum Collector-Emitter Voltage | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Turn Off Time (toff) | Terminal Finish | Maximum Drain-Source On Resistance | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Maximum Feedback Capacitance (Crss) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Vishay Intertechnology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.1 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
TIN |
.042 ohm |
5.6 A |
DUAL |
R-PDSO-G3 |
1 |
TO-236AB |
e3 |
30 |
260 |
30 pF |
||||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SINGLE |
NO |
.7 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
WIRE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
.45 A |
3 |
IN-LINE |
FET General Purpose Powers |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
2 ohm |
.45 A |
SINGLE |
R-PSIP-W3 |
Not Qualified |
e3 |
30 |
260 |
|||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.625 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
.2 A |
3 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN |
5 ohm |
.2 A |
DUAL |
R-PDSO-F3 |
1 |
Not Qualified |
ESD PROTECTION |
e3 |
30 |
260 |
|||||||||||||||||||
|
Vishay Intertechnology |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
3.1 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
1.1 A |
3 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
2 W |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
1.2 ohm |
1.1 A |
SINGLE |
R-PSSO-G3 |
DRAIN |
Not Qualified |
AVALANCHE RATED |
TO-261AA |
e3 |
18 pF |
|||||||||||||||||
|
Vishay Intertechnology |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.5 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
5.9 A |
3 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.045 ohm |
5.9 A |
DUAL |
R-PDSO-G3 |
1 |
TO-236 |
e3 |
30 |
260 |
|||||||||||||||||||
|
Vishay Intertechnology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
3.3 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
6 A |
8 |
SMALL OUTLINE |
FET General Purpose Powers |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
Matte Tin (Sn) |
.022 ohm |
6 A |
DUAL |
R-PDSO-G8 |
1 |
Not Qualified |
e3 |
30 |
260 |
||||||||||||||||||||
|
Onsemi |
TIN BISMUTH |
1 |
e6 |
30 |
260 |
|||||||||||||||||||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL AND P-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
2 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
6.2 A |
8 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.029 ohm |
6.2 A |
DUAL |
R-PDSO-G8 |
1 |
Not Qualified |
e3 |
30 |
260 |
||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.4 ohm |
3.5 A |
DUAL |
R-PDSO-G6 |
1 |
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE |
e3 |
|||||||||||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.47 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
2 ohm |
.34 A |
DUAL |
R-PDSO-G3 |
1 |
HIGH RELIABILITY |
e3 |
260 |
AEC-Q101 |
|||||||||||||||||||||
|
Vishay Intertechnology |
N-CHANNEL AND P-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
.28 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
.305 A |
6 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
1.4 ohm |
.305 A |
DUAL |
R-PDSO-F6 |
1 |
Not Qualified |
LOW THRESHOLD |
e3 |
30 |
260 |
|||||||||||||||||||
|
Infineon Technologies |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||||||||||||||||||||
|
Fairchild Semiconductor |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.5 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
2.7 A |
3 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.046 ohm |
2.7 A |
DUAL |
R-PDSO-G3 |
1 |
Not Qualified |
LOGIC LEVEL COMPATIBLE |
e3 |
|||||||||||||||||||||
|
ROHM |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.2 W |
PLASTIC/EPOXY |
SWITCHING |
50 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
.2 A |
3 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN SILVER COPPER |
2.8 ohm |
.2 A |
DUAL |
R-PDSO-G3 |
1 |
Not Qualified |
e1 |
10 |
260 |
||||||||||||||||||||
Toshiba |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
6 A |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.4 ohm |
2 A |
DUAL |
R-PDSO-F3 |
25 pF |
|||||||||||||||||||||||||||
|
Central Semiconductor |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.35 W |
PLASTIC/EPOXY |
AMPLIFIER |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
.115 A |
3 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
.35 W |
150 Cel |
SILICON |
-65 Cel |
MATTE TIN |
7.5 ohm |
.115 A |
DUAL |
R-PDSO-G3 |
1 |
e3 |
30 |
260 |
5 pF |
||||||||||||||||||
|
Infineon Technologies |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
250 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
MATTE TIN |
11 ohm |
.14 A |
DUAL |
R-PDSO-G3 |
1 |
AVALANCHE RATED |
e3 |
8 pF |
AEC-Q101 |
|||||||||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SINGLE |
NO |
PLASTIC/EPOXY |
100 V |
WIRE |
ROUND |
ENHANCEMENT MODE |
1 |
.9 A |
3 |
CYLINDRICAL |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.5 ohm |
.9 A |
BOTTOM |
O-PBCY-W3 |
Not Qualified |
e3 |
260 |
30 pF |
|||||||||||||||||||||||
|
Diodes Incorporated |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.5 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
1.5 A |
2 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
NICKEL PALLADIUM GOLD |
.15 ohm |
1.5 A |
SINGLE |
R-PSSO-N2 |
1 |
DRAIN |
Not Qualified |
HIGH RELIABILITY |
e4 |
30 |
260 |
60 pF |
||||||||||||||||
|
Fairchild Semiconductor |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.5 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
1.7 A |
3 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.085 ohm |
1.7 A |
DUAL |
R-PDSO-G3 |
1 |
Not Qualified |
e3 |
||||||||||||||||||||||
|
Vishay Intertechnology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1.7 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
TIN |
.051 ohm |
4.3 A |
DUAL |
R-PDSO-G3 |
1 |
TO-236AB |
e3 |
30 |
260 |
17 pF |
||||||||||||||||||||
Toshiba |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
30 V |
FLAT |
SQUARE |
ENHANCEMENT MODE |
1 |
5 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.00089 ohm |
150 A |
DUAL |
S-PDSO-F5 |
DRAIN |
||||||||||||||||||||||||||||||
|
Torex Semiconductor |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
5 A |
6 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Matte Tin (Sn) - annealed |
.025 ohm |
3.5 A |
DUAL |
R-PDSO-G6 |
1 |
Not Qualified |
e3 |
40 |
260 |
||||||||||||||||||||
|
Fairchild Semiconductor |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.5 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 A |
3 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.035 ohm |
3 A |
DUAL |
R-PDSO-G3 |
1 |
Not Qualified |
e3 |
||||||||||||||||||||||
|
Fairchild Semiconductor |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.1 W |
PLASTIC/EPOXY |
SWITCHING |
800 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
.2 A |
4 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
20 ohm |
.0002 A |
DUAL |
R-PDSO-G4 |
1 |
DRAIN |
e3 |
30 |
260 |
5 pF |
|||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.3 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
.23 A |
3 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
3 ohm |
.23 A |
DUAL |
R-PDSO-G3 |
1 |
Not Qualified |
HIGH RELIABILITY |
e3 |
30 |
260 |
|||||||||||||||||||
NXP Semiconductors |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
40 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.24 ohm |
1.5 A |
DUAL |
R-PDSO-G3 |
1 |
LOGIC LEVEL COMPATIBLE |
TO-236AB |
e3 |
30 |
260 |
AEC-Q101; IEC-60134 |
|||||||||||||||||||||||
|
Nexperia |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
.06 ohm |
3.1 A |
DUAL |
R-PDSO-G3 |
1 |
TO-236AB |
e3 |
30 |
260 |
AEC-Q101; IEC-60134 |
|||||||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SINGLE |
YES |
.33 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
.115 A |
3 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
7.5 ohm |
.115 A |
DUAL |
R-PDSO-G3 |
1 |
Not Qualified |
e3 |
30 |
260 |
5 pF |
|||||||||||||||||||
Toshiba |
|||||||||||||||||||||||||||||||||||||||||||||||||
|
Infineon Technologies |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN |
1.8 ohm |
.36 A |
DUAL |
R-PDSO-G3 |
1 |
AVALANCHE RATED |
e3 |
40 |
260 |
20 pF |
AEC-Q101 |
||||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.3 W |
PLASTIC/EPOXY |
SWITCHING |
80 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
.175 A |
3 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN |
10 ohm |
.175 A |
DUAL |
R-PDSO-G3 |
1 |
Not Qualified |
e3 |
30 |
260 |
6 pF |
|||||||||||||||||||
|
Vishay Intertechnology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.5 W |
PLASTIC/EPOXY |
SWITCHING |
200 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
1.7 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Pure Matte Tin (Sn) - annealed |
.24 ohm |
1.7 A |
DUAL |
R-PDSO-G8 |
1 |
Not Qualified |
30 |
260 |
|||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
2.2 W |
PLASTIC/EPOXY |
SWITCHING |
NO LEAD |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
9.7 A |
6 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
NICKEL PALLADIUM GOLD |
9.7 A |
DUAL |
R-PDSO-N6 |
1 |
DRAIN |
e4 |
30 |
260 |
320 pF |
|||||||||||||||||||||
|
Nexperia |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
40 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
-55 Cel |
TIN |
.075 ohm |
3 A |
DUAL |
R-PDSO-G3 |
1 |
LOGIC LEVEL COMPATIBLE |
TO-236AB |
e3 |
30 |
260 |
21 pF |
AEC-Q101; IEC-60134 |
|||||||||||||||||||
|
Alpha & Omega Semiconductor |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1.7 W |
PLASTIC/EPOXY |
SWITCHING |
40 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
.015 ohm |
10 A |
DUAL |
R-PDSO-G8 |
NOT SPECIFIED |
NOT SPECIFIED |
180 pF |
||||||||||||||||||||||||
|
Infineon Technologies |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN |
.013 ohm |
9.2 A |
DUAL |
R-PDSO-G8 |
3 |
Not Qualified |
LOGIC LEVEL COMPATIBLE |
e3 |
870 pF |
||||||||||||||||||||||||
|
ROHM |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
.15 W |
PLASTIC/EPOXY |
SWITCHING |
50 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
2.8 ohm |
.2 A |
DUAL |
R-PDSO-F6 |
NOT SPECIFIED |
NOT SPECIFIED |
3 pF |
|||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE |
YES |
23.6 W |
1 |
46 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
46 A |
||||||||||||||||||||||||||||||||||||||
|
Nexperia |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
3.2 ohm |
.24 A |
DUAL |
R-PDSO-G6 |
1 |
LOGIC LEVEL COMPATIBLE |
40 |
260 |
IEC-60134 |
|||||||||||||||||||||||||
|
Vishay Intertechnology |
P-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
2.5 W |
PLASTIC/EPOXY |
80 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
2.2 A |
3 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.27 ohm |
.0012 A |
DUAL |
R-PDSO-G3 |
1 |
Not Qualified |
TO-236 |
e3 |
30 |
260 |
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|
Vishay Intertechnology |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
5 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
11.4 A |
8 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.024 ohm |
8.1 A |
DUAL |
R-PDSO-G8 |
1 |
e3 |
30 |
260 |
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|
Onsemi |
||||||||||||||||||||||||||||||||||||||||||||||||
|
Microchip Technology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.36 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
.28 A |
3 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
2.5 ohm |
.28 A |
DUAL |
R-PDSO-G3 |
1 |
Not Qualified |
LOW THRESHOLD, LOGIC LEVEL COMPATIBLE |
TO-236AB |
e3 |
40 |
260 |
8 pF |
||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.54 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
.21 A |
3 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
5 ohm |
.17 A |
DUAL |
R-PDSO-G3 |
1 |
HIGH RELIABILITY |
e3 |
30 |
260 |
5 pF |
AEC-Q101 |
||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL AND P-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
.35 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
.35 W |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.99 ohm |
.31 A |
DUAL |
R-PDSO-F6 |
1 |
HIGH RELIABILITY |
e3 |
30 |
260 |
AEC-Q101 |
|||||||||||||||||||
|
Fairchild Semiconductor |
P-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
1.9 A |
6 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.17 ohm |
1.9 A |
DUAL |
R-PDSO-G6 |
1 |
Not Qualified |
e3 |
Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.
Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.
The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.
Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.