Part | RoHS | Manufacturer | Polarity or Channel Type | Configuration | Surface Mount | Nominal Transition Frequency (fT) | Maximum Power Dissipation (Abs) | Maximum Collector Current (IC) | Package Body Material | Transistor Application | Maximum Rise Time (tr) | Maximum VCEsat | Minimum DS Breakdown Voltage | Terminal Form | Package Shape | Operating Mode | No. of Elements | Maximum Pulsed Drain Current (IDM) | Avalanche Energy Rating (EAS) | Maximum Fall Time (tf) | Maximum Drain Current (Abs) (ID) | No. of Terminals | Package Style (Meter) | Sub-Category | Field Effect Transistor Technology | Maximum Power Dissipation Ambient | Minimum DC Current Gain (hFE) | Maximum Operating Temperature | Maximum Collector-Base Capacitance | Transistor Element Material | Maximum Collector-Emitter Voltage | Maximum Turn On Time (ton) | Minimum Operating Temperature | Maximum Turn Off Time (toff) | Terminal Finish | Maximum Drain-Source On Resistance | Maximum Drain Current (ID) | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Case Connection | Qualification | Additional Features | JEDEC-95 Code | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Maximum Feedback Capacitance (Crss) | Reference Standard |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
4 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
MATTE TIN |
.3 ohm |
1.9 A |
DUAL |
R-PDSO-G4 |
DRAIN |
LOGIC LEVEL COMPATIBLE, AVALANCHE RATED |
e3 |
55 pF |
AEC-Q101 |
||||||||||||||||||||||||
|
Infineon Technologies |
120 A |
310 mJ |
15 A |
Other Transistors |
MATTE TIN |
1 |
Not Qualified |
e3 |
30 |
260 |
||||||||||||||||||||||||||||||||||||||
|
Micro Commercial Components |
N-CHANNEL |
SINGLE |
YES |
.2 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
.115 A |
3 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
3 ohm |
.115 A |
DUAL |
R-PDSO-G3 |
1 |
Not Qualified |
e3 |
10 |
260 |
5 pF |
|||||||||||||||||||
|
Toshiba |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
30 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.042 ohm |
6 A |
DUAL |
R-PDSO-F3 |
NOT SPECIFIED |
NOT SPECIFIED |
||||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.5 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
.28 A |
3 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
.5 W |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
3.5 ohm |
.28 A |
DUAL |
R-PDSO-G3 |
1 |
e3 |
30 |
260 |
4.2 pF |
AEC-Q101 |
|||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
.4 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
.2 A |
6 |
SMALL OUTLINE |
FET General Purpose Powers |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
8 ohm |
.15 A |
DUAL |
R-PDSO-G6 |
1 |
HIGH RELIABILITY |
e3 |
30 |
260 |
||||||||||||||||||||
|
Onsemi |
||||||||||||||||||||||||||||||||||||||||||||||||
|
Vishay Intertechnology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.5 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
Matte Tin (Sn) |
.126 ohm |
3.1 A |
DUAL |
R-PDSO-G3 |
1 |
TO-236AB |
e3 |
30 |
260 |
14 pF |
||||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SINGLE |
NO |
.7 W |
PLASTIC/EPOXY |
60 V |
WIRE |
ROUND |
ENHANCEMENT MODE |
1 |
.45 A |
3 |
CYLINDRICAL |
FET General Purpose Powers |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
2 ohm |
.45 A |
BOTTOM |
O-PBCY-W3 |
Not Qualified |
e3 |
30 |
260 |
20 pF |
|||||||||||||||||||||
|
Vishay Intertechnology |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
175 Cel |
SILICON |
.03 ohm |
7.2 A |
DUAL |
R-PDSO-G8 |
Not Qualified |
40 |
260 |
175 pF |
||||||||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.36 W |
PLASTIC/EPOXY |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
.36 W |
150 Cel |
SILICON |
-55 Cel |
3.5 ohm |
.23 A |
DUAL |
R-PDSO-G3 |
2.8 pF |
||||||||||||||||||||||||||
|
Fairchild Semiconductor |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.5 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
1.5 A |
3 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.125 ohm |
1.5 A |
DUAL |
R-PDSO-G3 |
1 |
Not Qualified |
e3 |
||||||||||||||||||||||
|
Leshan Radio |
N-CHANNEL |
SINGLE |
YES |
.15 W |
1 |
.2 A |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
.2 A |
||||||||||||||||||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1.115 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
5.1 A |
3 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.042 ohm |
4.1 A |
DUAL |
R-PDSO-G3 |
LOGIC LEVEL COMPATIBLE |
TO-236AB |
IEC-60134 |
|||||||||||||||||||||||
|
Fairchild Semiconductor |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.5 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
1.6 A |
3 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.115 ohm |
1.6 A |
DUAL |
R-PDSO-G3 |
1 |
Not Qualified |
LOGIC LEVEL COMPATIBLE |
e3 |
|||||||||||||||||||||
Texas Instruments |
P-CHANNEL |
SINGLE |
NO |
.31 W |
PLASTIC/EPOXY |
WIRE |
ROUND |
DEPLETION MODE |
1 |
3 |
CYLINDRICAL |
FET General Purpose Small Signal |
JUNCTION |
150 Cel |
SILICON |
2000 ohm |
BOTTOM |
O-PBCY-W3 |
Not Qualified |
TO-92 |
NOT SPECIFIED |
NOT SPECIFIED |
2 pF |
||||||||||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL AND P-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
.33 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
6 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
.33 W |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.45 ohm |
1.066 A |
DUAL |
R-PDSO-G6 |
1 |
Not Qualified |
HIGH RELIABILITY |
e3 |
30 |
260 |
|||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
.7 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
3 A |
6 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.07 ohm |
3 A |
DUAL |
R-PDSO-G6 |
1 |
Not Qualified |
e3 |
30 |
260 |
||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
.3 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
.7 A |
6 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.3 ohm |
.7 A |
DUAL |
R-PDSO-G6 |
1 |
Not Qualified |
e3 |
30 |
260 |
||||||||||||||||||||
|
Vishay Intertechnology |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.9 W |
PLASTIC/EPOXY |
40 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
8.7 A |
8 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Matte Tin (Sn) |
.014 ohm |
8.7 A |
DUAL |
R-PDSO-G8 |
1 |
MS-012AA |
e3 |
30 |
260 |
|||||||||||||||||||||
|
Alpha & Omega Semiconductor |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.05 ohm |
4 A |
DUAL |
R-PDSO-G3 |
Not Qualified |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||
International Rectifier |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.54 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
1.2 A |
3 |
SMALL OUTLINE |
FET General Purpose Powers |
METAL-OXIDE SEMICONDUCTOR |
.34 W |
150 Cel |
SILICON |
-55 Cel |
TIN LEAD |
.25 ohm |
1.2 A |
DUAL |
R-PDSO-G3 |
1 |
Not Qualified |
HIGH RELIABILITY |
TO-236AB |
e0 |
30 |
245 |
|||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.255 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
.17 A |
3 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
TIN |
5.2 ohm |
.17 A |
DUAL |
R-PDSO-G3 |
1 |
e3 |
30 |
260 |
IEC-60134 |
|||||||||||||||||||
Toshiba |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
8 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
.028 ohm |
9 A |
DUAL |
R-PDSO-G8 |
260 pF |
|||||||||||||||||||||||||||||
|
Vishay Intertechnology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
3.1 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
4 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
.76 ohm |
1.5 A |
DUAL |
R-PDSO-G4 |
DRAIN |
AVALANCHE RATED |
TO-261AA |
15 pF |
|||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.75 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
.9 A |
3 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN |
.5 ohm |
.85 A |
DUAL |
R-PDSO-G3 |
1 |
Not Qualified |
e3 |
30 |
260 |
||||||||||||||||||||
|
Vishay Intertechnology |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1.7 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3.6 A |
3 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.06 ohm |
3.3 A |
DUAL |
R-PDSO-G3 |
1 |
Not Qualified |
TO-236 |
e3 |
30 |
260 |
|||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
.5 W |
PLASTIC/EPOXY |
200 V |
WIRE |
ROUND |
ENHANCEMENT MODE |
1 |
.12 A |
3 |
CYLINDRICAL |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
30 ohm |
.12 A |
BOTTOM |
O-PBCY-W3 |
Not Qualified |
HIGH RELIABILITY |
e3 |
30 |
260 |
7 pF |
AEC-Q101 |
|||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
NO |
PLASTIC/EPOXY |
200 V |
WIRE |
ROUND |
ENHANCEMENT MODE |
1 |
3 |
CYLINDRICAL |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
MATTE TIN |
30 ohm |
.12 A |
BOTTOM |
O-PBCY-W3 |
HIGH RELIABILITY |
e3 |
260 |
7 pF |
AEC-Q101 |
|||||||||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.625 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
.6 A |
3 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.3 ohm |
.6 A |
DUAL |
R-PDSO-F3 |
1 |
Not Qualified |
e3 |
30 |
260 |
||||||||||||||||||||
International Rectifier |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
TIN LEAD |
.25 ohm |
1.2 A |
DUAL |
R-PDSO-G3 |
Not Qualified |
HIGH RELIABILITY, ULTRA-LOW RESISTANCE |
TO-236AB |
e0 |
||||||||||||||||||||||||||
|
Vishay Intertechnology |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
5 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
18.6 A |
8 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Matte Tin (Sn) |
.008 ohm |
18.6 A |
DUAL |
R-PDSO-G8 |
1 |
MS-012AA |
e3 |
30 |
260 |
||||||||||||||||||||
|
Diodes Incorporated |
MATTE TIN |
1 |
e3 |
260 |
||||||||||||||||||||||||||||||||||||||||||||
Onsemi |
|||||||||||||||||||||||||||||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE |
YES |
PLASTIC/EPOXY |
AMPLIFIER |
20 V |
GULL WING |
RECTANGULAR |
DEPLETION MODE |
1 |
3 |
SMALL OUTLINE |
JUNCTION |
SILICON |
TIN |
.04 A |
DUAL |
R-PDSO-G3 |
Not Qualified |
TO-236AB |
e3 |
|||||||||||||||||||||||||||
|
Micro Commercial Components |
100 V |
MATTE TIN |
9 ohm |
.17 A |
1 |
e3 |
10 |
260 |
||||||||||||||||||||||||||||||||||||||||
|
NXP Semiconductors |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.83 W |
PLASTIC/EPOXY |
SWITCHING |
100 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
.85 A |
3 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN |
.5 ohm |
.85 A |
DUAL |
R-PDSO-G3 |
1 |
Not Qualified |
TO-236AB |
e3 |
30 |
260 |
|||||||||||||||||||
|
Onsemi |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
2.5 W |
PLASTIC/EPOXY |
SWITCHING |
200 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 A |
8 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
MATTE TIN |
.13 ohm |
3 A |
DUAL |
R-PDSO-G8 |
1 |
Not Qualified |
e3 |
30 |
260 |
||||||||||||||||||||
|
Vishay Intertechnology |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
1.4 W |
PLASTIC/EPOXY |
SWITCHING |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
3.7 A |
6 |
SMALL OUTLINE |
FET General Purpose Powers |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Matte Tin (Sn) |
.058 ohm |
3.7 A |
DUAL |
R-PDSO-G6 |
1 |
e3 |
30 |
260 |
|||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL AND P-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
.5 W |
PLASTIC/EPOXY |
30 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
1.5 A |
6 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
TIN |
.16 ohm |
1.4 A |
DUAL |
R-PDSO-G6 |
1 |
AVALANCHE RATED |
e3 |
260 |
7 pF |
AEC-Q101 |
||||||||||||||||||||
|
Infineon Technologies |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
.36 W |
PLASTIC/EPOXY |
240 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
.11 A |
3 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
14 ohm |
.11 A |
DUAL |
R-PDSO-G3 |
1 |
Not Qualified |
LOGIC LEVEL COMPATIBLE |
e3 |
260 |
4.2 pF |
|||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
1.3 W |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
-55 Cel |
MATTE TIN |
.14 ohm |
1.6 A |
DUAL |
R-PDSO-G3 |
1 |
HIGH RELIABILITY |
e3 |
30 |
260 |
16 pF |
AEC-Q101 |
|||||||||||||||||||
Fairchild Semiconductor |
N-CHANNEL |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
YES |
.3 W |
PLASTIC/EPOXY |
SWITCHING |
25 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
2 |
6 |
SMALL OUTLINE |
FET General Purpose Power |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
4 ohm |
.22 A |
DUAL |
R-PDSO-G6 |
Not Qualified |
LOGIC LEVEL COMPATIBLE |
||||||||||||||||||||||||||
|
NXP Semiconductors |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
4.15 W |
PLASTIC/EPOXY |
SWITCHING |
20 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3.5 A |
3 |
SMALL OUTLINE |
Other Transistors |
METAL-OXIDE SEMICONDUCTOR |
150 Cel |
SILICON |
Tin (Sn) |
.055 ohm |
3.5 A |
DUAL |
R-PDSO-G3 |
1 |
LOGIC LEVEL COMPATIBLE |
TO-236AB |
e3 |
30 |
260 |
IEC-60134 |
||||||||||||||||||
|
Diodes Incorporated |
P-CHANNEL |
SINGLE |
NO |
PLASTIC/EPOXY |
SWITCHING |
45 V |
WIRE |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
IN-LINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
MATTE TIN |
14 ohm |
.23 A |
SINGLE |
R-PSIP-W3 |
1 |
Not Qualified |
e3 |
||||||||||||||||||||||||||
Toshiba |
P-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
30 V |
FLAT |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
3 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
.042 ohm |
6 A |
DUAL |
R-PDSO-F3 |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||
|
Diodes Incorporated |
N-CHANNEL |
SINGLE WITH BUILT-IN DIODE |
YES |
PLASTIC/EPOXY |
SWITCHING |
60 V |
GULL WING |
RECTANGULAR |
ENHANCEMENT MODE |
1 |
4 |
SMALL OUTLINE |
METAL-OXIDE SEMICONDUCTOR |
SILICON |
MATTE TIN |
.6 ohm |
DUAL |
R-PDSO-G4 |
1 |
SOURCE |
HIGH RELIABILITY |
e3 |
30 |
260 |
AEC-Q101 |
|||||||||||||||||||||||
|
Micro Commercial Components |
60 V |
MATTE TIN |
3 ohm |
.34 A |
1 |
e3 |
10 |
260 |
Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.
Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.
The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.
Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.