Analog Devices - ADG465BRTZ-REEL7

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; JEDEC-95 Code: TO-236AB; Transistor Application: SWITCHING;

NXP Semiconductors' BSS123,215 is a N-CHANNEL FET for SWITCHING applications. Features include 100V DS Breakdown Voltage, 0.17A Drain Current, and 6 ohm On Resistance. With GULL WING terminals and ENHANCEMENT MODE operation, it's ideal for small outline packages in various electronic devices.

FDS4675_F085 by Fairchild Semiconductor is a P-CHANNEL FET for SWITCHING applications. Features include 40V DS Breakdown Voltage, 11A Drain Current, and 0.013 ohm On Resistance. With ENHANCEMENT MODE operation, it has a max temp of 175°C and comes in an 8-terminal GULL WING package.

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Drain Current (ID): .17 A; Minimum DS Breakdown Voltage: 100 V;

FDV301N-NB9V005 by Fairchild Semiconductor is a N-CHANNEL FET with 25V DS Breakdown Voltage, 0.5A Drain Current, and 4 ohm On Resistance. Ideal for SWITCHING applications in small outline packages with -55 to 150 °C operating temperature range.

Small Signal Field-Effect Transistors;

BSS138NH6327XTSA2 by Infineon is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for small signal applications. Operating in Enhancement Mode, it has 0.36W Power Dissipation and 3.5 ohm Drain-Source Resistance. With Gull Wing terminals and AEC-Q101 reference standard, it's suitable for automotive electronics due to its high temperature range of -55 to 150 °C.

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .83 W; No. of Elements: 1; Package Shape: ROUND;

SBSS138LT1 by Onsemi is a N-CHANNEL FET with 50V DS breakdown voltage, 0.2A ID, and 3.5Ω RDS(on). Ideal for switching applications, it features a built-in diode in a small outline package with GULL WING terminals.

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Maximum Drain-Source On Resistance: .035 ohm; Terminal Form: GULL WING;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .34 W; Terminal Form: GULL WING; Additional Features: ULTRA-LOW RESISTANCE;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; JESD-609 Code: e3; JESD-30 Code: R-PDSO-G3;

NXP Semiconductors' BSS138P,215 is a N-CHANNEL FET with 60V DS breakdown voltage and 0.36A max drain current. Ideal for switching applications, it features a built-in diode, operates in enhancement mode, and has a max power dissipation of 1140W.

NTS4001NT1G by Onsemi is a small signal N-channel FET with built-in diode and resistor, ideal for switching applications. It features a min DS breakdown voltage of 30V, max drain current of 0.27A, and max power dissipation of 0.33W. With an operating temperature range from -55 to 150°C, this MOSFET is suitable for various electronic devices requiring efficient power management in compact designs.

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .83 W; JESD-609 Code: e0; Minimum DS Breakdown Voltage: 60 V;

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Minimum DS Breakdown Voltage: 20 V; Maximum Operating Temperature: 150 Cel;

PMV65XP,215 by NXP Semiconductors is a P-CHANNEL FET with 20V DS Breakdown Voltage and 3.9A Drain Current. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with 0.076 ohm On Resistance. Package: PLASTIC/EPOXY, GULL WING terminals, and can handle up to 150°C temperature.

Vishay Intertechnology's SI2301CDS-T1-E3 is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features 3.1A Drain Current, 0.112 ohm On Resistance, and operates in ENHANCEMENT MODE. With a max power dissipation of 1.6W and operating temperature up to 150°C, it is suitable for various electronic designs requiring high performance in compact spaces.

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Maximum Operating Temperature: 150 Cel; Transistor Element Material: SILICON;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Body Material: PLASTIC/EPOXY; JEDEC-95 Code: TO-236AB;