Analog Devices - ADL5726ACPZN-R7

  1. Home
  2. Analog Devices - ADL5726ACPZN-R7
ADL5726ACPZN-R7 by Analog Devices

Image shown is a representation only.

Manufacturer Analog Devices
Manufacturer's Part Number ADL5726ACPZN-R7
Description WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Minimum Operating Temperature: -40 Cel; Package Equivalence Code: SOLCC8,.08,20;
Datasheet ADL5726ACPZN-R7 Datasheet
In Stock749
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Construction: COMPONENT
Minimum Operating Frequency: 21200 MHz
Minimum Operating Temperature: -40 Cel
Mounting Feature: SURFACE MOUNT
No. of Functions: 1
No. of Terminals: 8
Package Equivalence Code: SOLCC8,.08,20
Characteristic Impedance: 100 ohm
Maximum Operating Temperature: 85 Cel
Maximum Operating Frequency: 23600 MHz
RF or Microwave Device Type: WIDE BAND LOW POWER
Gain: 22.5 dB
Power Supplies (V): 1.8,3.3
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
749 $7.459 $5,586.791

Popular Products

Category Top Products

ABA-31563-BLKG by Agilent Technologies

ABA-31563-BLKG

Agilent Technologies

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Power Supplies (V): 3;
BGA715N7E6327XTSA2 by Infineon Technologies

BGA715N7E6327XTSA2

Infineon Technologies

Infineon's BGA715N7E6327XTSA2 is a RF amplifier with 20dB gain, operating from 1550-1615MHz. It can handle up to 10dBm input power and has a characteristic impedance of 50 ohm. Ideal for narrowband low-power applications in temperatures ranging from -40°C to 85°C.
HMC311SC70E by Hittite Microwave

HMC311SC70E

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Gain: 11 dB;
HMC717ALP3ETR by Analog Devices

HMC717ALP3ETR

Analog Devices

HMC717ALP3ETR by Analog Devices is a wide band low power RF amplifier with a gain of 11 dB. It operates at frequencies ranging from 4800 MHz to 6000 MHz and can handle a max input power of 20 dBm. This component, made of plastic/epoxy, is suitable for surface mount applications in the RF and microwave field.
HMC1087 by Hittite Microwave

HMC1087

Hittite Microwave

WIDE BAND MEDIUM POWER; Maximum Voltage Standing Wave Ratio: 4; Minimum Operating Temperature: -40 Cel; Minimum Operating Frequency: 2000 MHz; Maximum Input Power (CW): 34 dBm; Maximum Operating Frequency: 20000 MHz;
AG302-86G by Wj Communications

AG302-86G

Wj Communications

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; No. of Functions: 1;
MAAM28000-A1G by M/a-com

MAAM28000-A1G

M/a-com

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: CERAMIC; Technology: GAAS; Minimum Operating Temperature: -55 Cel;
ALM-32220 by Broadcom

ALM-32220

Broadcom

ALM-32220 by Broadcom is a wide band high power RF amplifier with 13.5 dB gain, operating from 1700 to 2700 MHz. It can handle up to 28 dBm CW input power and has a characteristic impedance of 50 ohm. Ideal for applications requiring high power amplification in RF & Microwave systems.
PHA-102+ by Mini-circuits

PHA-102+

Mini-circuits

WIDE BAND LOW POWER;
HMC441LP3 by Hittite Microwave

HMC441LP3

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Minimum Operating Frequency: 6500 MHz;
SST13LP05-MLCF by Microchip Technology

SST13LP05-MLCF

Microchip Technology

SST13LP05-MLCF by Microchip Technology is a wide band medium power RF amplifier with 28 dB gain. It operates b/w 2400-2500 MHz, ideal for wireless communication applications. The component has 16 terminals, matte tin finish, and can handle temperatures from -40 to 85°C.
HMC441LC3BTR-R5 by Analog Devices

HMC441LC3BTR-R5

Analog Devices

Analog Devices' HMC441LC3BTR-R5 is a wide band low power RF amplifier with 10 dB gain and 15 dBm max input power. Operating from 6-18 GHz, it's ideal for RF & microwave applications requiring high performance in temperatures ranging from -40 to 85°C.
HMC636ST89ETR by Hittite Microwave

HMC636ST89ETR

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Input Power (CW): 16 dBm;
RF3827TR7 by Qorvo

RF3827TR7

Qorvo

Qorvo's RF3827TR7 is a GAAS wide band medium power amplifier with 20.5 dB gain, operating from 5 MHz to 1500 MHz. It has a max input power of 13 dBm and VSWR of 20, suitable for surface mount applications in RF & microwave systems requiring up to 8V supply voltage.
HMC478MP86TR by Analog Devices

HMC478MP86TR

Analog Devices

HMC478MP86TR by Analog Devices is a wide band low power RF amplifier with a max operating temperature of 85°C and a min operating temperature of -40°C. It has 1 function, operates on a 5V power supply, and is mounted using surface mount technology. This amplifier is commonly used in RF and microwave applications.
XP1039-QJ-0G0T by Mimix Broadband

XP1039-QJ-0G0T

Mimix Broadband

WIDE BAND HIGH POWER; Gain: 15.5 dB; JESD-609 Code: e3; Maximum Operating Temperature: 85 Cel; Maximum Input Power (CW): 25 dBm; Terminal Finish: Matte Tin (Sn);
HMC506LP4TR by Hittite Microwave

HMC506LP4TR

Hittite Microwave

NARROW BAND LOW POWER;
XP1035-QH-0G0T by Mimix Broadband

XP1035-QH-0G0T

Mimix Broadband

WIDE BAND HIGH POWER; Maximum Operating Temperature: 85 Cel; Gain: 26 dB; Maximum Input Power (CW): 15 dBm; Minimum Operating Frequency: 5900 MHz; Minimum Operating Temperature: -55 Cel;
SMA70-2 by Tyco Electronics M/a-com

SMA70-2

Tyco Electronics M/a-com

WIDE BAND LOW POWER; Maximum Operating Frequency: 250 MHz; Construction: COMPONENT; Minimum Operating Frequency: 10 MHz; Additional Features: LOW NOISE; Gain: 6.5 dB;
ADL5542ACPZ-R7 by Analog Devices

ADL5542ACPZ-R7

Analog Devices

ADL5542ACPZ-R7 by Analog Devices is a wideband medium power RF amplifier with 11.2 dB gain, operating from 50 MHz to 6 GHz. It can handle up to 10 dBm CW input power and operates b/w -40°C to 85°C. Ideal for applications requiring high-frequency amplification in RF and microwave systems.