Analog Devices - HMC-C004

  1. Home
  2. Analog Devices - HMC-C004
HMC-C004 by Analog Devices

Image shown is a representation only.

Manufacturer Analog Devices
Manufacturer's Part Number HMC-C004
Description WIDE BAND MEDIUM POWER; Terminal Finish: Gold (Au) - with Nickel (Ni) barrier; Gain: 10 dB; Construction: COAXIAL; Maximum Operating Temperature: 85 Cel; JESD-609 Code: e4;
Datasheet HMC-C004 Datasheet
In Stock147
NAME DESCRIPTION
Construction: COAXIAL
Maximum Input Power (CW): 23 dBm
Minimum Operating Frequency: 10 MHz
Characteristic Impedance: 50 ohm
Additional Features: SMA-F
Maximum Operating Temperature: 85 Cel
Maximum Operating Frequency: 20000 MHz
RF or Microwave Device Type: WIDE BAND MEDIUM POWER
Terminal Finish: Gold (Au) - with Nickel (Ni) barrier
JESD-609 Code: e4
Minimum Operating Temperature: -55 Cel
Gain: 10 dB
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
147 $4,543.214 $667,852.458

Popular Products

Category Top Products

RDA1005LTR13 by Qorvo

RDA1005LTR13

Qorvo

Qorvo's RDA1005LTR13 is a wide band low power RF amplifier with 15.5 dB gain, operating from 50 MHz to 4000 MHz. It has a max input power of 20 dBm and operates on a 5V power supply. Ideal for surface mount applications in RF & microwave systems.
ADPA1105ACGZN by Analog Devices

ADPA1105ACGZN

Analog Devices

ADPA1105ACGZN by Analog Devices is a GAN RF amplifier with 30.5 dB gain, operating from 900 MHz to 1600 MHz. It has a max input power of 30 dBm and VSWR of 1.5, suitable for narrowband high-power applications in RF & microwave systems. With surface mounting feature and operating temperatures from -40°C to 85°C, it offers reliable performance in various environments.
BGU8019X by NXP Semiconductors

BGU8019X

NXP Semiconductors

The NXP Semiconductors BGU8019X is a RF & Microwave Amplifier with 16 dB Gain, operating from 1559 MHz to 1610 MHz. It has a Max Input Power of 10 dBm and operates in temperatures ranging from -40°C to 85°C. Ideal for narrow band low power applications with a characteristic impedance of 50 ohm.
A64 by Wj Communications

A64

Wj Communications

WIDE BAND LOW POWER; Maximum Operating Temperature: 85 Cel; Maximum Operating Frequency: 1200 MHz; Minimum Operating Temperature: -54 Cel; Minimum Operating Frequency: 10 MHz; Maximum Input Power (CW): 6 dBm;
SBB-5089Z by Sirenza Microdevices

SBB-5089Z

Sirenza Microdevices

Sirenza Microdevices' SBB-5089Z is a GAAS RF amplifier with 14.5 dB gain, operating from 50 MHz to 6 GHz. It has a max input power of 12 dBm and operates on a 5V supply, making it ideal for wideband low-power applications in RF and microwave systems. The component is designed for surface mount installation and can withstand temperatures ranging from -40°C to 85°C.
XF1001-SC-0G0T by M/a-com Technology Solutions

XF1001-SC-0G0T

M/a-com Technology Solutions

XF1001-SC-0G0T by M/a-com Technology Solutions is a wide band medium power RF amplifier with 10.1 dB gain and max input power of 24 dBm. It operates in the frequency range of 0-6000 MHz, making it suitable for various RF and microwave applications requiring high performance amplification in temperatures ranging from -40 to 85°C.
MAX2659ELT+T by Analog Devices

MAX2659ELT+T

Analog Devices

Analog Devices' MAX2659ELT+T is a BICMOS RF amplifier with 1.8/3V supplies, 6 terminals, and 5.6mA max supply current. It operates b/w -40°C to 85°C, features gold nickel terminal finish, and is ideal for surface mount applications in RF & microwave circuits.
HMC752LC4TR by Analog Devices

HMC752LC4TR

Analog Devices

Analog Devices' HMC752LC4TR is a GAAS RF amplifier with 24 terminals, operating from -40 to 85°C. It offers wideband low power performance at 3V supply, ideal for surface mount applications in RF and microwave systems.
HMC-ALH140 by Hittite Microwave

HMC-ALH140

Hittite Microwave

WIDE BAND LOW POWER; Gain: 10 dB; Minimum Operating Frequency: 24000 MHz; Additional Features: LOW NOISE; Construction: COMPONENT; Characteristic Impedance: 50 ohm;
CMPA801B030F1 by Wolfspeed

CMPA801B030F1

Wolfspeed

WIDE BAND HIGH POWER;
CMD170P4 by Qorvo

CMD170P4

Qorvo

WIDE BAND MEDIUM POWER;
HMC797LP5E by Hittite Microwave

HMC797LP5E

Hittite Microwave

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Minimum Operating Temperature: -55 Cel;
HMC863ALC4 by Analog Devices

HMC863ALC4

Analog Devices

Analog Devices' HMC863ALC4 is a wide band medium power RF amplifier with 20.5 dB gain, operating from 24-29.5 GHz. It can handle up to 26 dBm CW input power and has a VSWR of 7, making it ideal for RF and microwave applications requiring high performance in the -40 to 85°C temperature range.
NPA1003QAR by Nitronex

NPA1003QAR

Nitronex

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; No. of Functions: 1; Package Equivalence Code: LCC16,.16SQ,25;
SBB2089Z by Qorvo

SBB2089Z

Qorvo

The Qorvo SBB2089Z is a GAAS RF amplifier with 18.5 dB gain, operating from 50 MHz to 850 MHz. It has a max input power of 24 dBm and operates at temperatures ranging from -40°C to 85°C. Ideal for wideband low-power applications, this component features a surface-mount package with nickel palladium gold finish.
6001 by Teledyne Technologies

6001

Teledyne Technologies

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 10; Package Body Material: METAL; Technology: GAAS; Power Supplies (V): 7;
BGA3018,115 by NXP Semiconductors

BGA3018,115

NXP Semiconductors

NXP Semiconductors' BGA3018,115 is a RF & Microwave Amplifier with 8V power supply, 3 terminals, and max operating temp of 85°C. It features surface mounting and TIN terminal finish. Ideal for applications requiring high-frequency signal amplification in various electronic devices.
HELA-10B+ by Mini-circuits

HELA-10B+

Mini-circuits

HELA-10B+ by Mini-circuits is a wideband medium power RF amplifier with 9.5 dB gain, suitable for frequencies ranging from 50 MHz to 1000 MHz. It can handle a max input power of 20 dBm and has a VSWR of 1.22, making it ideal for various RF and microwave applications.
BGB719N7ESDE6327XTMA1 by Infineon Technologies

BGB719N7ESDE6327XTMA1

Infineon Technologies

BGB719N7ESDE6327XTMA1 by Infineon Technologies is a wide band low power RF amplifier with 13 dB gain. Operating from 10 MHz to 1000 MHz, it has a characteristic impedance of 50 ohm. Ideal for applications requiring amplification in the RF and microwave range.
RF3827SR by Qorvo

RF3827SR

Qorvo

Qorvo's RF3827SR is a GaAs wide band medium power amplifier with 16 terminals, operating b/w -40°C to 85°C. It requires an 8V power supply and draws a max current of 130mA. Ideal for surface mount applications in RF & microwave systems.