Analog Devices - HMC442

Sirenza Microdevices' SBB-5089Z is a GAAS RF amplifier with 14.5 dB gain, operating from 50 MHz to 6 GHz. It has a max input power of 12 dBm and operates on a 5V supply, making it ideal for wideband low-power applications in RF and microwave systems. The component is designed for surface mount installation and can withstand temperatures ranging from -40°C to 85°C.

WIDE BAND LOW POWER; Maximum Operating Frequency: 13500 MHz; Construction: COMPONENT; Characteristic Impedance: 50 ohm; Gain: 10 dB; Maximum Input Power (CW): 15 dBm;

MAX2244EBL-T by Maxim Integrated is a RF amplifier with 10 dBm CW input power, 6 VSWR, and 3V supply. It operates b/w -40 to 85°C, ideal for narrow band low power applications in the frequency range of 2400-2500 MHz. The component has a surface mount package with 9 terminals and requires a max current of 205 mA.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: CERAMIC; Technology: BIPOLAR; JESD-609 Code: e3;

The NXP Semiconductors BGU8009 is a narrow band low power RF amplifier with a gain of 17.6 dB, operating b/w 1559-1610 MHz. It can handle up to 10 dBm CW input power and has an impedance of 50 ohm. Ideal for RF and microwave applications requiring high gain amplification in a compact form factor.

GRF2013 by Guerrilla Rf is a wide band medium power RF amplifier with 17.5 dB gain, operating from 50-8000 MHz. It can handle up to 22 dBm CW input power and has a max VSWR of 2. Ideal for applications requiring high-frequency amplification in temperatures ranging from -40 to 105°C.

AMF-4F-02200230-15-13P by L-3 Narda-miteq is a COAXIAL RF amplifier with 58 dB Gain, VSWR of 1.5, operating from 2200 MHz to 2300 MHz. Ideal for narrowband low-power applications in RF & Microwave systems.

NXP Semiconductors' BGA3018,115 is a RF & Microwave Amplifier with 8V power supply, 3 terminals, and max operating temp of 85°C. It features surface mounting and TIN terminal finish. Ideal for applications requiring high-frequency signal amplification in various electronic devices.

Analog Devices' HMC8205BF10 is a wideband high-power RF amplifier with 25 dB gain and 35 dBm CW input power. Operating from 300 MHz to 6 GHz, it features a characteristic impedance of 50 ohms. Ideal for applications requiring high-power amplification in RF and microwave systems.

Analog Devices' HMC8410LP2FETR is a wide band low power RF amplifier with 13 dB gain and 50 ohm impedance. It operates from 10 MHz to 10 GHz, handling up to 20 dBm CW input power. Ideal for RF and microwave applications requiring high performance in temperatures ranging from -40°C to 85°C.

VMMK-2503-TR1G by Broadcom is a GAAS technology RF amplifier with 12.5 dB gain, operating from 1000 to 12000 MHz. It has a max input power of 20 dBm and requires a 5V power supply, making it ideal for wideband low-power applications in RF and microwave systems.

HELA-10 by Mini-circuits is a wideband medium power RF amplifier with 9.5 dB gain, operating from 50 MHz to 1000 MHz. It has a max input power of 20 dBm and VSWR of 1.22, making it suitable for various RF and microwave applications requiring high performance amplification in a compact surface-mount package.

Analog Devices' HMC871LC5 is a wide band low power RF amplifier with 10 dB gain and 50 ohm impedance. It operates from 0 to 20000 MHz, handling up to 10 dBm CW input power. Ideal for applications requiring high frequency amplification in environments ranging from -40°C to 85°C.

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 12; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Package Equivalence Code: LCC12,.12SQ,20;

WIDE BAND MEDIUM POWER;

HMC409LP4ETR by Analog Devices is a RF amplifier with 28 dB gain, operating frequency range of 3.3-3.8 GHz, and max input power of 10 dBm. It is designed for narrowband medium power applications in RF & microwave systems requiring a characteristic impedance of 50 ohms. The component features a surface mount package body material made of plastic/epoxy, suitable for temperatures ranging from -40 to 85°C.

WIDE BAND LOW POWER; Maximum Operating Frequency: 2000 MHz; Terminal Finish: Matte Tin (Sn); Characteristic Impedance: 50 ohm; Minimum Operating Frequency: 200 MHz; Maximum Operating Temperature: 85 Cel;

WIDE BAND MEDIUM POWER; Minimum Operating Temperature: -40 Cel; Gain: 12 dB; Characteristic Impedance: 50 ohm; Maximum Operating Frequency: 6000 MHz; Minimum Operating Frequency: 0 MHz;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Power Supplies (V): 3;

NXP Semiconductors' BGU8007,115 is a RF & Microwave Amplifier with 6 terminals and Tin finish. It operates b/w -40 to 85°C, powered by 1.8V supply at max current of 14.7mA. Ideal for surface mount applications in various electronic devices.