Analog Devices - HMC633LC4RTR

Analog Devices' HMC414MS8GE is a narrow band medium power RF amplifier with 17 dB gain, operating from 2200 to 2800 MHz. It can handle up to 17 dBm CW input power and has a characteristic impedance of 50 ohms. Ideal for RF applications requiring high performance in temperatures ranging from -40°C to 85°C.

Qorvo's TGA4521 is a GaAs RF amplifier with 16dB gain, operating from 32-45 GHz. It handles up to 20 dBm CW input power and requires a 6V supply. Ideal for wideband medium-power applications in RF and microwave systems.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: CERAMIC; Technology: GAAS; Construction: COMPONENT;

The Mini-circuits PHA-202+ is a wideband medium power RF amplifier with 13.2 dB gain, operating from 30 MHz to 2700 MHz. It can handle up to 19 dBm CW input power and operates in temperatures ranging from -40°C to 85°C. Ideal for RF and microwave applications requiring high gain and broad frequency coverage.

BGU6005/N2X by NXP Semiconductors is a narrow band low power RF amplifier with 17.5 dB gain and 50 ohm impedance. It operates b/w 1559-1610 MHz, handles up to 10 dBm input power, and has a max VSWR of 1.43. This component is ideal for applications requiring surface mounting in RF & microwave systems.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Construction: COMPONENT;

WIDE BAND LOW POWER; Maximum Input Power (CW): 13 dBm; Construction: COMPONENT; Maximum Operating Frequency: 8000 MHz; Characteristic Impedance: 50 ohm; Gain: 20 dB;

Broadcom's MGA-53543-BLKG is a wide band low power RF amplifier with 14 dB gain. Operating from 50 MHz to 6 GHz, it handles up to 13 dBm CW input power and has a VSWR of 2. Ideal for RF applications requiring a compact component with a characteristic impedance of 50 ohms.

NARROW BAND MEDIUM POWER; Maximum Input Power (CW): 29 dBm; Minimum Operating Frequency: 130 MHz; Characteristic Impedance: 50 ohm; Gain: 28.7 dB; Maximum Operating Frequency: 1000 MHz;

Mitsubishi Electric's RA07H4047M-101 is a plastic/epoxy RF amplifier module with 14.77 dBm CW input power, 4 VSWR, and operating frequency range of 400-470 MHz. Ideal for narrowband high-power applications, it operates at temperatures from -30 to 90°C with hybrid technology and requires 3.5-12.5V power supplies.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: METAL; Technology: GAAS; Characteristic Impedance: 50 ohm;

ERA-50SM by Mini-circuits is a wide band low power RF amplifier with 16 dB gain, operating from 0 to 1500 MHz. It has a max input power of 13 dBm and VSWR of 1.2, suitable for RF & microwave applications requiring surface mount construction.

MAX2630EUS-T by Maxim Integrated is a wide band low power RF amplifier with 11dB gain, operating from 800MHz to 1GHz. It has a max input power of 5dBm and VSWR of 1.25, suitable for applications requiring surface mount construction in RF & microwave systems.

TRF37C73IDSGT by Texas Instruments is a wide band low power RF amplifier with 18dB gain, operating from 1MHz to 6GHz. It has a max input power of 10dBm and operates on a 3.3V supply, suitable for applications requiring high frequency amplification in RF systems. The component comes in an 8-terminal plastic/epoxy package for surface mounting, making it ideal for various RF and microwave applications.

Analog Devices' HMC564LC4TR-R5 is a wide band low power RF amplifier with 14 dB gain and 20 dBm CW input power. Operating from -40 to 85°C, it covers frequencies from 7-14 GHz. Ideal for RF & microwave applications requiring high performance in a compact component package.

ADPA7007AEHZ-R7 by Analog Devices is a wide band medium power RF amplifier with 18.5 dB gain, operating from 20-44 GHz. It features a max input power of 27 dBm and VSWR of 1.29, suitable for surface mount applications in RF & microwave systems requiring high performance amplification.

Analog Devices' HMC636ST89ETR is a wide band low power RF amplifier with 5dB gain, operating from 200MHz to 4GHz. It has a max input power of 16dBm and operates on a 5V supply. Ideal for applications requiring surface mount construction in RF & microwave systems.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Construction: COMPONENT;

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Characteristic Impedance: 50 ohm; Maximum Supply Current: 105 mA;

GALI-51 by Mini-circuits is a wide band low power RF amplifier with 14 dB gain, operating from 0 to 4000 MHz. It has a max input power of 13 dBm and VSWR of 1.7, suitable for applications requiring surface mount construction in RF & microwave systems.