Analog Devices - HMC659

  1. Home
  2. Analog Devices - HMC659
HMC659 by Analog Devices

Image shown is a representation only.

Manufacturer Analog Devices
Manufacturer's Part Number HMC659
Description WIDE BAND MEDIUM POWER; Technology: GAAS; Maximum Operating Frequency: 15000 MHz; Maximum Operating Temperature: 85 Cel; Package Equivalence Code: DIE OR CHIP; Construction: COMPONENT;
Datasheet HMC659 Datasheet
In Stock473
NAME DESCRIPTION
Construction: COMPONENT
Minimum Operating Frequency: 0 MHz
Sub-Category: RF/Microwave Amplifiers
Minimum Operating Temperature: -55 Cel
No. of Functions: 1
Maximum Input Power (CW): 20 dBm
Package Equivalence Code: DIE OR CHIP
Technology: GAAS
Characteristic Impedance: 50 ohm
Maximum Operating Temperature: 85 Cel
Maximum Operating Frequency: 15000 MHz
RF or Microwave Device Type: WIDE BAND MEDIUM POWER
Gain: 14.8 dB
Power Supplies (V): 8
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
473 $187.620 $88,744.260

Popular Products

Category Top Products

MMZ25332BT1 by Freescale Semiconductor

MMZ25332BT1

Freescale Semiconductor

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 12; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Maximum Supply Current: 412 mA;
QPA1003P by Qorvo

QPA1003P

Qorvo

Qorvo's QPA1003P is a GAN RF amplifier with 31.4 dB gain, operating from 1-8 GHz. It handles up to 18 dBm CW input power, VSWR of 3, and requires 28V supply. Ideal for wideband high-power applications in RF & microwave systems.
HMC451LC3 by Hittite Microwave

HMC451LC3

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Input Power (CW): 10 dBm;
ZX60-P103LN+ by Mini-circuits

ZX60-P103LN+

Mini-circuits

Mini-circuits' ZX60-P103LN+ is a COAXIAL RF amplifier with 4.5 dB Gain, 50-3000 MHz frequency range, and 21 dBm CW power input. Ideal for wideband low-power applications, it offers a VSWR of 1.8 and operates b/w -40°C to 85°C temperature range.
HMC516LC5 by Analog Devices

HMC516LC5

Analog Devices

HMC516LC5 by Analog Devices is a wide band low power RF amplifier with 18 dB gain and 50 ohm impedance. It operates from 9-18 GHz, with a max input power of 5 dBm. Ideal for RF & microwave applications requiring high performance in a compact ceramic package.
MAX2630EUS+T by Maxim Integrated

MAX2630EUS+T

Maxim Integrated

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Maximum Voltage Standing Wave Ratio: 1.25;
SBB5089ZSR by Rf Micro Devices

SBB5089ZSR

Rf Micro Devices

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Minimum Operating Temperature: -40 Cel;
HMC460LC5TR by Hittite Microwave

HMC460LC5TR

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: CERAMIC; Technology: GAAS; No. of Functions: 1;
ADL5536ARKZ-R7 by Analog Devices

ADL5536ARKZ-R7

Analog Devices

ADL5536ARKZ-R7 by Analog Devices is a wide band low power RF amplifier with 18.1 dB gain, suitable for frequencies ranging from 20 MHz to 1000 MHz. It can handle a max input power of 20 dBm and operates in temperatures b/w -40°C to 85°C. Ideal for RF and microwave applications requiring high gain amplification within the specified frequency range.
HMC694LP4ETR by Analog Devices

HMC694LP4ETR

Analog Devices

Analog Devices' HMC694LP4ETR is a GAAS technology RF amplifier with 24 terminals, operating from -40 to 85°C. It has a power supply of 5V and is designed for wideband low-power applications in RF & microwave systems. The package body material is plastic/epoxy with matte tin terminal finish, suitable for surface mounting.
MAX2643EXT+T by Maxim Integrated

MAX2643EXT+T

Maxim Integrated

WIDE BAND LOW POWER; Maximum Operating Frequency: 1000 MHz; Minimum Operating Frequency: 800 MHz; JESD-609 Code: e4; Characteristic Impedance: 50 ohm; Gain: 14.5 dB;
HMC462-SX by Analog Devices

HMC462-SX

Analog Devices

HMC462-SX by Analog Devices is a PHEMT technology RF amplifier with 12.5 dB gain, operating from 2-20 GHz. It has a max input power of 18 dBm and VSWR of 1.25, making it ideal for wideband low-power applications in RF and microwave systems. With a compact surface-mount construction and requiring only 5V supply voltage, it offers high performance in a small form factor.
ADL8107ACPZN-R7 by Analog Devices

ADL8107ACPZN-R7

Analog Devices

ADL8107ACPZN-R7 by Analog Devices is a PHEMT RF amplifier with 18dB gain, operating from 6-18GHz. It has a max input power of 22dBm and VSWR of 1.54, suitable for wideband low-power applications in RF & microwave systems. With surface mount construction and 8 terminals, it operates b/w -40 to 85°C with a +5V supply.
HMC659LC5 by Analog Devices

HMC659LC5

Analog Devices

HMC659LC5 by Analog Devices is a wide band medium power RF amplifier with 14 dB gain and 50 ohm impedance. It operates from 0 to 15000 MHz, handles up to 20 dBm CW input power, and has a temperature range of -40 to 85°C. Ideal for RF & microwave applications requiring high performance in a compact plastic/epoxy package.
HMC963LC4 by Hittite Microwave

HMC963LC4

Hittite Microwave

WIDE BAND LOW POWER; Terminal Finish: Gold (Au) - with Nickel (Ni) barrier; Minimum Operating Frequency: 6000 MHz; JESD-609 Code: e4; Gain: 16.5 dB; Maximum Input Power (CW): 0 dBm;
HMC636ST89E by Hittite Microwave

HMC636ST89E

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Power Supplies (V): 5;
HMC6981LS6TR by Hittite Microwave

HMC6981LS6TR

Hittite Microwave

WIDE BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: CERAMIC; Technology: GAAS; Maximum Operating Temperature: 85 Cel;
ZX60-2411BM-S by Mini-circuits

ZX60-2411BM-S

Mini-circuits

ZX60-2411BM-S by Mini-circuits is a COAXIAL RF amplifier with 9 dB Gain, 50 ohm Impedance, and 1.65 VSWR. Ideal for NARROW BAND LOW POWER applications in the frequency range of 1900-2400 MHz.
HMC391LP4E by Hittite Microwave

HMC391LP4E

Hittite Microwave

NARROW BAND LOW POWER; Terminal Finish: Matte Tin (Sn); Maximum Voltage Standing Wave Ratio: 2; Characteristic Impedance: 50 ohm; Maximum Operating Frequency: 4450 MHz; JESD-609 Code: e3;
TGA2701-SM by Triquint Semiconductor

TGA2701-SM

Triquint Semiconductor

WIDE BAND HIGH POWER; Maximum Input Power (CW): 29 dBm; Construction: COMPONENT; Maximum Operating Frequency: 8500 MHz; Gain: 18 dB; Minimum Operating Frequency: 5900 MHz;