Analog Devices - HMC669LP3TR

Analog Devices' HMC499LC4TR is a GaAs RF amplifier with 24 terminals, operating from -40°C to 85°C. It offers wideband medium power amplification at 5V supply voltage. Ideal for RF and microwave applications, this surface-mount device features ceramic packaging for robust performance.

Analog Devices' HMC505LP4ETR is a RF amplifier with 24 terminals, operating from -40°C to 85°C. It features a narrow band low power design, powered by 3V supply. Ideal for surface mount applications in RF and microwave systems.

Qorvo's QPA2612TR7 is a GAN technology RF amplifier with 34.2 dB gain, operating from 8-12 GHz. It offers 21 dBm CW input power handling and VSWR of 4, suitable for wideband high-power applications in RF & microwave systems. The component has 24 terminals and surface-mounting feature in a plastic/epoxy package body.

Broadcom's MGA-81563-BLK is a GAAS RF amplifier with 10.5 dB gain, operating from 100 MHz to 6 GHz. It has a max input power of 13 dBm and VSWR of 2, suitable for wideband low-power applications in temperatures ranging from -40°C to 85°C. The component features surface mounting and requires a 3V power supply with a max current draw of 51 mA.

WIDE BAND HIGH POWER;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: METAL; Technology: GAAS; Characteristic Impedance: 50 ohm;

RF/Microwave Amplifiers;

WIDE BAND LOW POWER; Maximum Voltage Standing Wave Ratio: 2; Minimum Operating Frequency: 1000 MHz; Characteristic Impedance: 50 ohm; Minimum Operating Temperature: -55 Cel; Maximum Operating Temperature: 85 Cel;

Analog Devices' HMC960LP4ETR is a wide band high power RF amplifier with 0 dB gain, operating from 0 to 100 MHz. It has 24 terminals, matte tin finish, and operates b/w -40°C to +85°C. Ideal for applications requiring surface mount components in RF and microwave systems.

SGA3563Z by Qorvo is a wide band low power RF amplifier with 19.5 dB gain, operating from 0 to 5000 MHz. It has a max input power of 18 dBm and operates at temperatures ranging from -40 to 85°C. Ideal for applications requiring high frequency amplification in RF & microwave systems.

WIDE BAND HIGH POWER; Terminal Finish: GOLD OVER NICKEL; Gain: 19 dB; Construction: COMPONENT; Minimum Operating Frequency: 30 MHz; Maximum Input Power (CW): 33 dBm;

WIDE BAND LOW POWER; Maximum Operating Frequency: 6000 MHz; Construction: COMPONENT; Characteristic Impedance: 50 ohm; Maximum Voltage Standing Wave Ratio: 1.2; Minimum Operating Frequency: 100 MHz;

WIDE BAND LOW POWER; Technology: GAAS; Gain: 17.5 dB; Minimum Operating Frequency: 2000 MHz; Construction: COMPONENT; Maximum Operating Frequency: 20000 MHz;

WIDE BAND LOW POWER; Terminal Finish: Matte Tin (Sn); Minimum Operating Frequency: 7100 MHz; Minimum Operating Temperature: -40 Cel; Maximum Voltage Standing Wave Ratio: 2; Construction: COMPONENT;

Infineon's BGA231N7E6330XTSA1 is a RF amplifier with 16dB gain, operating from 1550-1615MHz. It has a max input power of 0dBm and operates in temperatures ranging from -40 to 85°C. Ideal for narrowband low-power applications requiring a component construction.

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; No. of Functions: 1;

The Qorvo SBB2089Z is a GAAS RF amplifier with 18.5 dB gain, operating from 50 MHz to 850 MHz. It has a max input power of 24 dBm and operates at temperatures ranging from -40°C to 85°C. Ideal for wideband low-power applications, this component features a surface-mount package with nickel palladium gold finish.

Analog Devices' HMC8500PM5ETR is a GaN wide band high power RF amplifier with 12 dB gain, operating from 10 MHz to 2800 MHz. It has a max input power of 33 dBm and VSWR of 6, suitable for applications requiring high power amplification in RF and microwave systems. The component is housed in a plastic/epoxy package with 32 terminals, designed for surface mount installation at temperatures ranging from -40°C to 85°C.

Analog Devices' HMC462 RF amplifier offers 12.5 dB gain, 18 dBm CW input power, and 1.25 max VSWR. Ideal for wideband low-power applications from 2-20 GHz, with PHEMT tech and surface mounting feature.

Qorvo's QPA1010D is a GAN RF amplifier with 30 dBm CW input power, 23.1 dB gain, and 50 ohm impedance. Ideal for wideband high-power applications from 7900 MHz to 11000 MHz, it features a VSWR of 3 and operates on -1.9V to 24V supplies.