Analog Devices - HMC757LP4ETR

  1. Home
  2. Analog Devices - HMC757LP4ETR
HMC757LP4ETR by Analog Devices

Image shown is a representation only.

Manufacturer Analog Devices
Manufacturer's Part Number HMC757LP4ETR
Description WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Power Supplies (V): 5;
Datasheet HMC757LP4ETR Datasheet
In Stock68
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
No. of Functions: 1
No. of Terminals: 24
Package Equivalence Code: LCC24,.16SQ,20
Technology: GAAS
Maximum Operating Temperature: 85 Cel
Sub-Category: RF/Microwave Amplifiers
RF or Microwave Device Type: WIDE BAND MEDIUM POWER
Minimum Operating Temperature: -55 Cel
Power Supplies (V): 5
Mounting Feature: SURFACE MOUNT
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
68 $19.120 $1,300.160

Popular Products

Category Top Products

BGA2003,115 by NXP Semiconductors

BGA2003,115

NXP Semiconductors

The NXP Semiconductors BGA2003,115 is a RF & Microwave Amplifier with 16 dB gain and operates b/w 900-1800 MHz. It has a wide band low power technology, 50 ohm impedance, and requires a 2.5V power supply at max 15 mA current. Ideal for applications requiring high frequency amplification in components like plastic/epoxy packages.
TQP7M9102-PCB2600 by Qorvo

TQP7M9102-PCB2600

Qorvo

WIDE BAND MEDIUM POWER; Terminal Finish: NICKEL PALLADIUM GOLD; JESD-609 Code: e4;
QPA2612 by Qorvo

QPA2612

Qorvo

Qorvo's QPA2612 is a GAN technology RF amplifier with 34.2 dB gain, operating from 8-12 GHz. It offers 21 dBm CW input power, VSWR of 4, and is ideal for wideband high-power applications in surface-mount configurations.
MGA-82563-TR1 by Agilent Technologies

MGA-82563-TR1

Agilent Technologies

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; JESD-609 Code: e0;
RA35H1516M by Mitsubishi Electric

RA35H1516M

Mitsubishi Electric

Mitsubishi Electric's RA35H1516M is a narrow band high power RF amplifier module with 20 dBm CW input power and VSWR of 3. Operating from -30°C to 110°C, it covers frequencies b/w 154-162 MHz. Ideal for applications requiring high-power amplification in the RF & microwave domain.
HMC634LC4TR-R5 by Analog Devices

HMC634LC4TR-R5

Analog Devices

Analog Devices' HMC634LC4TR-R5 is a GAAS RF amplifier with 24 terminals, operating at -40 to 85°C. It requires a 5V power supply and features a surface-mount package for applications in RF and microwave systems.
NBB-400-D by Qorvo

NBB-400-D

Qorvo

Qorvo's NBB-400-D is a wide band low power RF amplifier with 15.5 dB gain, suitable for frequencies ranging from 0 to 8000 MHz. It can handle up to 20 dBm CW input power and has a VSWR of 1.9, making it ideal for various RF and microwave applications. Operating temperatures range from -45°C to 85°C, with a characteristic impedance of 50 ohms.
HMC635LC4 by Analog Devices

HMC635LC4

Analog Devices

Analog Devices' HMC635LC4 is a wide band low power RF amplifier with 15 dB gain, operating from 18-40 GHz. It features a max input power of 15 dBm and operates on a 5V supply. Ideal for applications requiring high frequency amplification in RF & microwave systems.
MGA-62563-TR2G by Broadcom

MGA-62563-TR2G

Broadcom

Broadcom's MGA-62563-TR2G is a GAAS RF amplifier with 20.4 dB gain, operating from 100 MHz to 3000 MHz. It has a max input power of 21 dBm and VSWR of 2, suitable for wideband low-power applications in RF and microwave systems. The component features a plastic/epoxy package, matte tin terminals, and operates on 3/5V supplies.
MGA-23003-BLKG by Broadcom

MGA-23003-BLKG

Broadcom

Broadcom's MGA-23003-BLKG is a RF & Microwave Amplifier with 32 dB Gain, operating b/w 3300-3800 MHz. It has a Max Input Power of 15 dBm and operates on a 3.3V power supply. Ideal for narrowband medium power applications due to its GaAs technology and surface mounting feature.
RDA1005LSR by Qorvo

RDA1005LSR

Qorvo

Qorvo's RDA1005LSR is a wide band low power RF amplifier with 15.5 dB gain, operating from 50 MHz to 4000 MHz. It has a max input power of 20 dBm and operates on a 5V power supply. Ideal for applications requiring surface mount construction in RF & microwave systems.
GRF2013 by Guerrilla Rf

GRF2013

Guerrilla Rf

GRF2013 by Guerrilla Rf is a wide band medium power RF amplifier with 17.5 dB gain, operating from 50-8000 MHz. It can handle up to 22 dBm CW input power and has a max VSWR of 2. Ideal for applications requiring high-frequency amplification in temperatures ranging from -40 to 105°C.
TGA2526 by Triquint Semiconductor

TGA2526

Triquint Semiconductor

WIDE BAND LOW POWER; Technology: GAAS; Gain: 17.5 dB; Minimum Operating Frequency: 2000 MHz; Construction: COMPONENT; Maximum Operating Frequency: 20000 MHz;
HMC634LC4 by Hittite Microwave

HMC634LC4

Hittite Microwave

WIDE BAND LOW POWER; Construction: COMPONENT; Minimum Operating Temperature: -40 Cel; Maximum Input Power (CW): 10 dBm; Maximum Operating Temperature: 85 Cel; Minimum Operating Frequency: 5000 MHz;
TCBT-14+ by Mini-circuits

TCBT-14+

Mini-circuits

TCBT-14+ by Mini-circuits is a wide band low power RF amplifier with max input power of 30 dBm and VSWR of 1.5. Operating from 10 MHz to 10 GHz, it's ideal for RF & microwave applications requiring high performance in a compact form factor. With gold over nickel finish, it ensures reliable operation in temperatures ranging from -40°C to 85°C.
XF1001-SC-0G00 by M/a-com Technology Solutions

XF1001-SC-0G00

M/a-com Technology Solutions

XF1001-SC-0G00 by M/a-com Technology Solutions is a wide band medium power RF amplifier with 10.1 dB gain and max input power of 24 dBm. It operates in the frequency range of 0-6000 MHz, making it suitable for various RF and microwave applications requiring high performance amplification in temperatures ranging from -40 to 85°C.
ADA-4643-BLKG by Broadcom

ADA-4643-BLKG

Broadcom

ADA-4643-BLKG by Broadcom is a wide band low power RF amplifier with 15.5 dB gain, operating from 0-2500 MHz. It features a max input power of 18 dBm and VSWR of 1.6, suitable for RF & microwave applications requiring high performance in plastic/epoxy package.
ADL5521ACPZ-R7 by Analog Devices

ADL5521ACPZ-R7

Analog Devices

ADL5521ACPZ-R7 by Analog Devices is a wide band low power RF amplifier with a gain of 10.5 dB, operating frequency range from 400 MHz to 4000 MHz, and max input power of 20 dBm. It is constructed using GaAs technology, has a characteristic impedance of 50 ohm, and is suitable for applications requiring high-frequency amplification in RF and microwave systems.
HMC498LC4 by Hittite Microwave

HMC498LC4

Hittite Microwave

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: CERAMIC; Technology: GAAS; Terminal Finish: Gold (Au) - with Nickel (Ni) barrier;
HMC462LP5ETR by Analog Devices

HMC462LP5ETR

Analog Devices

Analog Devices' HMC462LP5ETR is a GAAS technology RF amplifier with 32 terminals, operating from -40 to 85°C. It requires a 5V power supply, drawing a max of 84mA. This wideband low-power device is ideal for surface mount applications in RF and microwave systems.