M/a-com Technology Solutions - XL1000-BD-000V

Analog Devices' HMC327MS8GTR is a wide band medium power RF amplifier with 5V power supply, operating from -40 to 85°C. It features a plastic/epoxy package, bipolar technology, and surface mounting. Ideal for RF and microwave applications requiring high performance in compact designs.

WIDE BAND HIGH POWER; Terminal Finish: Gold (Au); JESD-609 Code: e4;

The NXP Semiconductors BGU8103X is a RF & Microwave Amplifier with 10 dBm CW input power, 1.78 max VSWR, and 14.5 dB gain. It operates b/w -40 to 85°C, has a characteristic impedance of 50 ohm, and is suitable for narrow band low power applications in the frequency range of 1559-1610 MHz.

Infineon's BGA616H6327XTSA1 is a wide band low power RF amplifier with 18dB gain and 10dBm CW input power. Operating from -65°C to 150°C, it covers frequencies from 0MHz to 2700MHz. Ideal for applications requiring high performance in RF & microwave amplification.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Maximum Operating Frequency: 800 MHz;

ADPA7006AEHZ by Analog Devices is a RF & Microwave Amplifier with 20 dB gain, operating frequency range of 18-44 GHz. It has a max input power of 20 dBm and operates on a 5V power supply. Ideal for wide band medium power applications requiring high performance in surface mount configurations.

ADL5544ARKZ-R7 by Analog Devices is a wide band medium power RF amplifier with 18.5 dB gain, operating from 30 MHz to 6 GHz. It has a max input power of 18 dBm and operates on a 5V supply, making it suitable for various RF and microwave applications. The component is constructed using bipolar technology in a plastic/epoxy package for surface mounting.

NARROW BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Power Supplies (V): 3;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: CERAMIC; Technology: GAAS; Package Equivalence Code: LCC24,.16SQ,20;

Qorvo's CMD264P3 is a wide band low power RF amplifier with 18 dB gain, operating from 6-18 GHz. It can handle up to 20 dBm CW input power and operates b/w -40°C to +85°C. Ideal for RF & microwave applications requiring high performance in a compact component.

NARROW BAND HIGH POWER;

WIDE BAND MEDIUM POWER;

Analog Devices' HMC606LC5TR-R5 is a wide band low power RF amplifier with 9.5 dB gain, suitable for frequencies ranging from 2-18 GHz. It can handle up to 15 dBm CW input power and operates in temperatures from -40 to 85°C. Ideal for RF and microwave applications requiring high performance in a compact component design.

Qorvo's CMD283C3 is a wide band low power RF amplifier with 18 dB gain and 50 ohm impedance. It operates from 2-6 GHz, handles up to 20 dBm CW input power, and has a temperature range of -40 to 85°C. Ideal for RF & microwave applications requiring high performance in compact designs.

WIDE BAND HIGH POWER; Terminal Finish: GOLD OVER NICKEL; Gain: 19 dB; Construction: COMPONENT; Minimum Operating Frequency: 30 MHz; Maximum Input Power (CW): 33 dBm;

HMC565LC5TR by Analog Devices is a wide band low power RF amplifier with 16 dB gain, operating from 6-20 GHz. It has a max input power of 10 dBm and operates on a 3V supply, drawing 75 mA. Ideal for RF and microwave applications requiring high frequency amplification in compact designs.

Qorvo's RDA1005LTR7 is a wide band low power RF amplifier with 15.5 dB gain, operating from 50 MHz to 4000 MHz. It has a max input power of 20 dBm and operates on a 5V power supply. Ideal for applications requiring surface mount components in RF & microwave systems.

TRF37C73IDSGT by Texas Instruments is a wide band low power RF amplifier with 18dB gain, operating from 1MHz to 6GHz. It has a max input power of 10dBm and operates on a 3.3V supply, suitable for applications requiring high frequency amplification in RF systems. The component comes in an 8-terminal plastic/epoxy package for surface mounting, making it ideal for various RF and microwave applications.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Minimum Operating Temperature: -40 Cel;

The NXP Semiconductors MMG15241HT1 is a wide band medium power RF amplifier with 14 dB gain, operating from 500 MHz to 2800 MHz. It has a max input power of 23 dBm and requires a 5V power supply, drawing up to 105 mA. This component is designed for surface mount applications in RF and microwave systems.