Analog Devices - HMC926LP5E

  1. Home
  2. Analog Devices - HMC926LP5E
HMC926LP5E by Analog Devices

Image shown is a representation only.

Manufacturer Analog Devices
Manufacturer's Part Number HMC926LP5E
Description WIDE BAND MEDIUM POWER; Maximum Operating Frequency: 2700 MHz; JESD-609 Code: e3; Construction: COMPONENT; Characteristic Impedance: 50 ohm; Gain: 25.5 dB;
Datasheet HMC926LP5E Datasheet
In Stock165
NAME DESCRIPTION
Construction: COMPONENT
Maximum Input Power (CW): 8 dBm
Minimum Operating Frequency: 700 MHz
Characteristic Impedance: 50 ohm
Maximum Operating Temperature: 85 Cel
Maximum Operating Frequency: 2700 MHz
RF or Microwave Device Type: WIDE BAND MEDIUM POWER
Terminal Finish: Matte Tin (Sn)
JESD-609 Code: e3
Minimum Operating Temperature: -40 Cel
Gain: 25.5 dB
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
165 - -

Popular Products

Category Top Products

AFD4-020040-20P by L-3 Narda-miteq

AFD4-020040-20P

L-3 Narda-miteq

AFD4-020040-20P by L-3 Narda-miteq is a COAXIAL RF amplifier with 32 dB gain, VSWR of 2, operating from 2-4 GHz. Ideal for wideband medium power applications in RF & microwave systems.
BGU8009,115 by NXP Semiconductors

BGU8009,115

NXP Semiconductors

NXP Semiconductors' BGU8009,115 is a RF & Microwave Amplifier with 6 terminals and PLASTIC/EPOXY package. It operates b/w -40 to 85 °C with power supplies of 1.8/2.85 V. Ideal for surface mount applications in various electronic devices.
MGA-62563-BLK by Broadcom

MGA-62563-BLK

Broadcom

Broadcom's MGA-62563-BLK is a GAAS RF amplifier with 13dB gain, operating from 100MHz to 3GHz. It has a max input power of 21dBm and VSWR of 2, suitable for wideband low-power applications. The component features surface mounting and operates on 3/5V supplies with a max current draw of 77mA.
SST12CP11-QVCE by Microchip Technology

SST12CP11-QVCE

Microchip Technology

SST12CP11-QVCE by Microchip Technology is a RF & Microwave Amplifier with 16 terminals and operates on a 5V power supply. It features bipolar technology, can withstand temperatures from -40°C to 85°C, and comes in a surface mount package. Ideal for applications requiring high-frequency signal amplification.
HMC451LC3TR by Hittite Microwave

HMC451LC3TR

Hittite Microwave

WIDE BAND LOW POWER; Maximum Operating Temperature: 85 Cel; Construction: COMPONENT; Maximum Operating Frequency: 20000 MHz; Gain: 14 dB; Characteristic Impedance: 50 ohm;
RDA1005LTR7 by Qorvo

RDA1005LTR7

Qorvo

Qorvo's RDA1005LTR7 is a wide band low power RF amplifier with 15.5 dB gain, operating from 50 MHz to 4000 MHz. It has a max input power of 20 dBm and operates on a 5V power supply. Ideal for applications requiring surface mount components in RF & microwave systems.
AMMP-6220 by Agilent Technologies

AMMP-6220

Agilent Technologies

WIDE BAND LOW POWER; Maximum Operating Frequency: 20000 MHz; Characteristic Impedance: 50 ohm; Minimum Operating Frequency: 6000 MHz; Construction: COMPONENT; Gain: 18 dB;
HMC994A by Analog Devices

HMC994A

Analog Devices

Analog Devices' HMC994A is a wide band medium power RF amplifier with 12.5 dB gain, handling up to 25 dBm CW input power. With a VSWR of 7, it operates from -55°C to 85°C, making it ideal for various RF and microwave applications up to 30 GHz.
BGA427H6327XTSA1 by Infineon Technologies

BGA427H6327XTSA1

Infineon Technologies

BGA427H6327XTSA1 by Infineon Technologies is a RF amplifier with 18.5 dB gain, operating from 100 MHz to 1800 MHz. It has a max input power of -10 dBm and operates in temperatures ranging from -65°C to 150°C. This component is suitable for narrow band medium power applications.
CMD264P3 by Custom Mmic Design Services

CMD264P3

Custom Mmic Design Services

WIDE BAND LOW POWER; Maximum Operating Frequency: 18000 MHz; JESD-609 Code: e3; Minimum Operating Frequency: 6000 MHz; Maximum Operating Temperature: 85 Cel; Gain: 18 dB;
HMC788ALP2ETR by Analog Devices

HMC788ALP2ETR

Analog Devices

HMC788ALP2ETR by Analog Devices is a wide band low power RF amplifier with 9 dB gain, suitable for frequencies ranging from 10 MHz to 10 GHz. It can handle a max input power of 20 dBm and operates in temperatures b/w -40°C to 85°C. Ideal for applications requiring RF amplification in various electronic systems.
HMC441LP3ETR by Hittite Microwave

HMC441LP3ETR

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Terminal Finish: Matte Tin (Sn);
QPA1011 by Qorvo

QPA1011

Qorvo

Qorvo's QPA1011 is a wide band high power RF amplifier with 28 dB gain and 30 dBm CW input power. Operating from 7900 to 11000 MHz, it has a characteristic impedance of 50 ohm. Ideal for applications requiring high power amplification in RF & microwave systems, with a temperature range of -40 to 85°C.
HMC1114PM5E by Analog Devices

HMC1114PM5E

Analog Devices

Analog Devices' HMC1114PM5E is a GaN wide band high power RF amplifier with 31 dB gain, operating from 2.7 GHz to 3.8 GHz. It has a max input power of 18 dBm and VSWR of 6, suitable for applications requiring high-power amplification in the RF & microwave domain. The component is housed in a plastic/epoxy package with 32 terminals, designed for surface mount installation.
BGA612H6327XTSA1 by Infineon Technologies

BGA612H6327XTSA1

Infineon Technologies

Infineon's BGA612H6327XTSA1 is a wide band low power RF amplifier with 16.3 dB gain and 10 dBm max input power. Operating from -65 to 150°C, it covers frequencies from 0 to 2800 MHz. Ideal for RF & microwave applications requiring high gain in a compact form factor.
HMC903LP3E by Hittite Microwave

HMC903LP3E

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; JESD-609 Code: e3;
SBB2089ZSR by Qorvo

SBB2089ZSR

Qorvo

Qorvo's SBB2089ZSR is a wide band low power RF amplifier with 18.5 dB gain, suitable for frequencies ranging from 50 MHz to 850 MHz. It operates at temperatures b/w -40°C to 85°C and can handle a max input power of 24 dBm. This component is ideal for applications requiring high performance in RF and microwave systems.
HMC1114PM5ETR by Analog Devices

HMC1114PM5ETR

Analog Devices

Analog Devices' HMC1114PM5ETR is a GaN wide band high power RF amplifier with 31 dB gain, operating from 2.7 GHz to 3.8 GHz. It has a max input power of 18 dBm and VSWR of 6, suitable for applications requiring high power amplification in the RF & Microwave field. The component features a surface mount package body material made of plastic/epoxy, with a max supply current of 150 mA at 28V.
M67799HA by Mitsubishi Electric

M67799HA

Mitsubishi Electric

Mitsubishi Electric's M67799HA is a hybrid module with 450-470 MHz frequency range, 50 ohm impedance, and 14.77 dBm CW input power. Ideal for narrowband high-power RF applications, it operates b/w -30 to 100°C with VSWR of up to 20 in plastic/epoxy package.
GVA-63+ by Mini-circuits

GVA-63+

Mini-circuits

GVA-63+ by Mini-circuits is a wide band low power RF amplifier with 19 dB gain, operating from 10 MHz to 6 GHz. It has a max input power of 13 dBm and operates on a 5V supply with a max current draw of 78 mA. Ideal for applications requiring amplification in the RF and microwave range.