Analog Devices - MAX2246EBL+

  1. Home
  2. Analog Devices - MAX2246EBL+
MAX2246EBL+ by Analog Devices

Image shown is a representation only.

Manufacturer Analog Devices
Manufacturer's Part Number MAX2246EBL+
Description WIDE BAND LOW POWER; Minimum Operating Frequency: 2400 MHz; Maximum Operating Frequency: 2500 MHz; Maximum Voltage Standing Wave Ratio: 6; Construction: COMPONENT; Maximum Input Power (CW): 10 dBm;
Datasheet MAX2246EBL+ Datasheet
In Stock1,511
NAME DESCRIPTION
Maximum Voltage Standing Wave Ratio: 6
Construction: COMPONENT
Maximum Input Power (CW): 10 dBm
Minimum Operating Frequency: 2400 MHz
Characteristic Impedance: 50 ohm
Maximum Operating Temperature: 85 Cel
Maximum Operating Frequency: 2500 MHz
RF or Microwave Device Type: WIDE BAND LOW POWER
Minimum Operating Temperature: -40 Cel
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,511 - -

Popular Products

Category Top Products

HMC311ST89TR by Analog Devices

HMC311ST89TR

Analog Devices

Analog Devices' HMC311ST89TR is a wide band low power RF amplifier with 5V supply, operating from -40 to 85°C. It features bipolar technology, surface mount package, and draws max 74mA current. Ideal for RF & microwave applications requiring compact amplification solutions.
MD7IC2012GNR1,528 by NXP Semiconductors

MD7IC2012GNR1,528

NXP Semiconductors

NARROW BAND HIGH POWER;
HMC478SC70ETR by Analog Devices

HMC478SC70ETR

Analog Devices

Analog Devices' HMC478SC70ETR is a wide band low power RF amplifier with 5V supply, 82mA max current, and -40 to 85°C operating range. Its bipolar technology and surface mount package make it ideal for RF & microwave applications requiring high performance in compact designs.
MGA-86563-TR1G by Agilent Technologies

MGA-86563-TR1G

Agilent Technologies

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Power Supplies (V): 5;
HMC561LP3E by Hittite Microwave

HMC561LP3E

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Operating Temperature: 85 Cel;
HMC506LP4E by Analog Devices

HMC506LP4E

Analog Devices

Analog Devices' HMC506LP4E is a RF amplifier with 50 ohm impedance, operating frequency range of 7800-8700 MHz, and VSWR of 2. It is ideal for narrow band low power applications in temperatures ranging from -40 to 85°C.
TQP3M9037 by Triquint Semiconductor

TQP3M9037

Triquint Semiconductor

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; No. of Functions: 1; Characteristic Impedance: 50 ohm;
MGA-53543-BLKG by Broadcom

MGA-53543-BLKG

Broadcom

Broadcom's MGA-53543-BLKG is a wide band low power RF amplifier with 14 dB gain. Operating from 50 MHz to 6 GHz, it handles up to 13 dBm CW input power and has a VSWR of 2. Ideal for RF applications requiring a compact component with a characteristic impedance of 50 ohms.
SBB-2089Z by Sirenza Microdevices

SBB-2089Z

Sirenza Microdevices

Sirenza Microdevices' SBB-2089Z is a GAAS RF amplifier with 18.5 dB gain, operating from 50 MHz to 850 MHz. It has a max input power of 12 dBm and requires a 5V power supply, making it ideal for wideband low-power applications in RF and microwave systems. The component is designed for surface mount installation and can operate in temperatures ranging from -40°C to 85°C.
TGA2237-SM by Triquint Semiconductor

TGA2237-SM

Triquint Semiconductor

WIDE BAND HIGH POWER; Terminal Finish: GOLD OVER NICKEL; Gain: 19 dB; Construction: COMPONENT; Minimum Operating Frequency: 30 MHz; Maximum Input Power (CW): 33 dBm;
935373852528 by NXP Semiconductors

935373852528

NXP Semiconductors

NXP Semiconductors' 935373852528 RF Amplifier operates in the 3200-4000 MHz range with a gain of 26.5 dB and can handle up to 28 dBm CW input power. This LDMOS component, with a VSWR of 10, is designed for narrowband high-power applications requiring a characteristic impedance of 50 ohms.
HMC6981LS6 by Analog Devices

HMC6981LS6

Analog Devices

Analog Devices' HMC6981LS6 is a wide band high power RF amplifier with 23 dB gain, operating from 15-20 GHz. It has a max input power of 18 dBm and operates on a 5.5V supply, drawing up to 1100 mA. Ideal for applications requiring high power amplification in the RF & Microwave domain.
HMC441LC3BTR by Hittite Microwave

HMC441LC3BTR

Hittite Microwave

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 12; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Package Equivalence Code: LCC12,.12SQ,20;
A33 by TE Connectivity

A33

TE Connectivity

TE Connectivity's A33 RF & Microwave Amplifier features 15V power supply, 4 terminals, and 16mA max supply current. With a metal package body, it operates b/w 0-50°C. Ideal for applications requiring reliable amplification in various temperature conditions.
HMC751LC4TR by Hittite Microwave

HMC751LC4TR

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: CERAMIC; Technology: GAAS; Characteristic Impedance: 50 ohm;
SGA-3363 by Sirenza Microdevices

SGA-3363

Sirenza Microdevices

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; No. of Functions: 1;
HMC998ALP5E by Analog Devices

HMC998ALP5E

Analog Devices

WIDE BAND MEDIUM POWER;
CMD244K5 by Qorvo

CMD244K5

Qorvo

WIDE BAND LOW POWER;
HMC952ALP5GE by Analog Devices

HMC952ALP5GE

Analog Devices

Analog Devices' HMC952ALP5GE is a wide band medium power RF amplifier with 28 dB gain, operating from 8-14 GHz. It has a max input power of 24 dBm and operates on a 6V supply. Ideal for RF & microwave applications requiring high performance in plastic/epoxy package.
MGA-82563-BLKG by Agilent Technologies

MGA-82563-BLKG

Agilent Technologies

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Input Power (CW): 13 dBm;