Analog Devices - MAX2246EBL+

CMA-83LN+ by Mini-circuits is a wide band low power RF amplifier with 18.5 dB gain, operating from 500 MHz to 8000 MHz. It has a max input power of 16 dBm and VSWR of 1.19, suitable for surface mount applications in RF & microwave systems requiring high performance amplification.

AFIC901NT1 by NXP Semiconductors is a wide band medium power RF amplifier with 31.2 dB gain, operating from 1.8 MHz to 1000 MHz. It has a max VSWR of 25 and operates b/w -40°C to 150°C, making it suitable for various RF and microwave applications requiring high performance amplification in a compact surface mount package.

Broadcom's ABA-54563-BLKG is a wide band low power RF amplifier with 21 dB gain, operating from 0 to 3400 MHz. It has a max input power of 20 dBm and VSWR of 1.2, suitable for surface mount applications in RF & microwave systems. The component features a characteristic impedance of 50 ohms and operates at 5V with a max supply current of 90 mA.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: CERAMIC; Technology: GAAS; Maximum Operating Temperature: 85 Cel;

WIDE BAND LOW POWER; Package Body Material: PLASTIC/EPOXY; Technology: BICMOS; Maximum Input Power (CW): 10 dBm; JESD-609 Code: e3; Maximum Operating Frequency: 2500 MHz;

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: CERAMIC; Technology: GAAS; No. of Functions: 1;

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 12; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Maximum Supply Current: 412 mA;

WIDE BAND LOW POWER;

SPF-5043Z by Sirenza Microdevices is a 50 ohm wide band low power RF amplifier with gain of 6.7 dB. It operates b/w 100 MHz to 4000 MHz, handling up to 25 dBm CW input power. Ideal for RF & microwave applications, it can withstand temperatures from -40°C to 85°C.

Mini-circuits' ZX60-2411BM-S+ is a COAXIAL RF amplifier with 9 dB Gain, operating from 1900 MHz to 2400 MHz. It has a Max Input Power of 16 dBm and VSWR of 1.65, making it ideal for NARROW BAND LOW POWER applications in RF & Microwave systems.

SST12LP08-QXBE by Microchip is a RF amplifier with 29 dB gain, operating frequency range of 2412-2484 MHz, and 5 dBm max input power. It is designed for narrow band medium power applications, featuring a 50 ohm characteristic impedance and surface mounting feature.

The NXP Semiconductors MW7IC008NT1 is a MOS technology RF amplifier with 2 functions, offering a gain of 21.5 dB and operating frequency range from 100 MHz to 1000 MHz. It has a max input power of 38 dBm and VSWR of 10, suitable for wideband high-power applications in RF and microwave systems. The component comes in a plastic/epoxy package with matte tin finish, featuring 24 terminals for surface mount installation at a power supply of 28V.

ADL5545ARKZ-R7 by Analog Devices is a wide band medium power RF amplifier with 24.8 dB gain and 50 ohm impedance. It operates from 30 MHz to 6 GHz, with a max input power of 18 dBm. This component is ideal for RF and microwave applications requiring high performance in a compact surface mount package.

CHA3666-QAG by United Monolithic is a wide band low power RF amplifier with 19 dB gain. It operates b/w 5800-17000 MHz, handling up to 10 dBm CW input power. Ideal for RF applications, it can withstand temperatures from -40°C to 85°C.

Analog Devices' HMC635LC4 is a wide band low power RF amplifier with 15 dB gain, operating from 18-40 GHz. It features a max input power of 15 dBm and operates on a 5V supply. Ideal for applications requiring high frequency amplification in RF & microwave systems.

NARROW BAND HIGH POWER;

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Technology: HYBRID; JESD-609 Code: e3; Maximum Supply Current: 2400 mA;

Analog Devices' HMC5805ALS6 is a wide band low power RF amplifier with 9 dB gain and 50 ohm impedance. It operates from 0 to 40 GHz, handling up to 22 dBm CW input power. Ideal for applications requiring high frequency amplification in extreme temperature environments.

NXP Semiconductors' MMZ09332BT1 is a narrow band medium power RF amplifier with 28.7 dB gain and 29 dBm max input power. Operating from 130 MHz to 1000 MHz, it's ideal for applications requiring high-frequency amplification in RF and microwave systems.

WIDE BAND LOW POWER; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Construction: COMPONENT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Input Power (CW): 20 dBm;