Broadcom - ACT10-223-2R

  1. Home
  2. Broadcom - ACT10-223-2R
ACT10-223-2R by Broadcom

Image shown is a representation only.

Manufacturer Broadcom
Manufacturer's Part Number ACT10-223-2R
Description NARROW BAND MEDIUM POWER; Minimum Operating Frequency: 10 MHz; Minimum Operating Temperature: 0 Cel; Maximum Voltage Standing Wave Ratio: 2; Maximum Operating Frequency: 1000 MHz; Construction: MODULE;
Datasheet ACT10-223-2R Datasheet
In Stock251
NAME DESCRIPTION
Maximum Voltage Standing Wave Ratio: 2
Construction: MODULE
Minimum Operating Frequency: 10 MHz
Characteristic Impedance: 50 ohm
Maximum Operating Temperature: 50 Cel
Maximum Operating Frequency: 1000 MHz
RF or Microwave Device Type: NARROW BAND MEDIUM POWER
Minimum Operating Temperature: 0 Cel
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
251 - -

Popular Products

Category Top Products

MGA-86576-TR1G by Agilent Technologies

MGA-86576-TR1G

Agilent Technologies

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: METAL; Technology: GAAS; JESD-609 Code: e3;
HMC903LP3ETR by Analog Devices

HMC903LP3ETR

Analog Devices

Analog Devices' HMC903LP3ETR is a wide band low power RF amplifier with 18.5 dB gain, operating from 6-17 GHz. It has a max input power of 20 dBm and operates on a 3.5V supply, making it ideal for RF and microwave applications requiring high performance in plastic/epoxy packages.
HMC5879LS7 by Analog Devices

HMC5879LS7

Analog Devices

WIDE BAND HIGH POWER;
SGA-3363Z by Sirenza Microdevices

SGA-3363Z

Sirenza Microdevices

SGA-3363Z by Sirenza Microdevices is a wide band low power RF amplifier with 15.5 dB gain, operating from 0 to 5500 MHz. It has a max input power of 18 dBm and operates on a 2.6V supply, making it suitable for various RF and microwave applications requiring high performance in plastic/epoxy package.
HMC637ALP5ETR by Analog Devices

HMC637ALP5ETR

Analog Devices

Analog Devices' HMC637ALP5ETR is a wide band medium power RF amplifier with 12 dB gain and 25 dBm CW input power. Operating from -40 to 85°C, it covers frequencies from 0 to 6000 MHz. Ideal for RF and microwave applications requiring high performance in a compact component package.
AMMP-6222-TR1G by Broadcom

AMMP-6222-TR1G

Broadcom

AMMP-6222-TR1G by Broadcom is a wide band low power RF amplifier with 23 dB gain. It operates from 7 GHz to 21 GHz, suitable for high-frequency applications. With a max input power of 10 dBm and compact surface mount construction, it is ideal for RF and microwave systems requiring amplification in the 50 ohm impedance range.
HMC799LP3E by Hittite Microwave

HMC799LP3E

Hittite Microwave

WIDE BAND LOW POWER; Minimum Operating Frequency: 0 MHz; Additional Features: LOW NOISE; Maximum Operating Temperature: 85 Cel; Maximum Operating Frequency: 700 MHz; Gain: 42 dB;
SGA-3363-TR1 by Sirenza Microdevices

SGA-3363-TR1

Sirenza Microdevices

WIDE BAND LOW POWER; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Input Power (CW): 5 dBm; Maximum Operating Frequency: 3600 MHz; Characteristic Impedance: 50 ohm; Gain: 15.5 dB;
CMPA2060035F1 by Wolfspeed

CMPA2060035F1

Wolfspeed

NARROW BAND HIGH POWER;
MMG20241HT1 by NXP Semiconductors

MMG20241HT1

NXP Semiconductors

The NXP Semiconductors MMG20241HT1 is a GAAS RF amplifier with 18.4 dB gain, operating from 450 MHz to 3800 MHz. It has a max input power of 23 dBm and requires a 5V power supply, making it ideal for wideband medium-power applications in RF and microwave systems. The component is surface-mountable with matte tin terminals and a characteristic impedance of 50 ohms.
SPF-5043Z by Sirenza Microdevices

SPF-5043Z

Sirenza Microdevices

SPF-5043Z by Sirenza Microdevices is a 50 ohm wide band low power RF amplifier with gain of 6.7 dB. It operates b/w 100 MHz to 4000 MHz, handling up to 25 dBm CW input power. Ideal for RF & microwave applications, it can withstand temperatures from -40°C to 85°C.
760 by Ttm Technologies

760

Ttm Technologies

RF/Microwave Amplifiers; No. of Terminals: 8; Package Body Material: METAL; Technology: HYBRID; Screening Level: 38535Q/M;38534H;883B; Maximum Operating Temperature: 125 Cel;
HMC374SC70E by Hittite Microwave

HMC374SC70E

Hittite Microwave

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Package Equivalence Code: TSSOP6,.08;
HMC499 by Analog Devices

HMC499

Analog Devices

Analog Devices' HMC499 is a wide band medium power RF amplifier with 12 dB gain and 20 dBm CW input power. Operating from -55°C to 85°C, it covers frequencies from 21 GHz to 32 GHz. Ideal for RF and microwave applications requiring high performance in a compact component package.
MAR-3SM+ by Mini-circuits

MAR-3SM+

Mini-circuits

MAR-3SM+ by Mini-circuits is a wideband low power RF amplifier with 8 dB gain, suitable for frequencies ranging from 0 to 2000 MHz. It has a max input power of 13 dBm and VSWR of 1.7, making it ideal for RF and microwave applications requiring high performance in temperature range -20 to 85°C.
QPA2612TR7 by Qorvo

QPA2612TR7

Qorvo

Qorvo's QPA2612TR7 is a GAN technology RF amplifier with 34.2 dB gain, operating from 8-12 GHz. It offers 21 dBm CW input power handling and VSWR of 4, suitable for wideband high-power applications in RF & microwave systems. The component has 24 terminals and surface-mounting feature in a plastic/epoxy package body.
LEE-29 by Mini-circuits

LEE-29

Mini-circuits

Mini-circuits LEE-29 is a wide band low power RF amplifier with 13.3 dB gain, handling up to 15 dBm CW input power. It operates from 0 to 8000 MHz, with VSWR of 1.6 and characteristic impedance of 50 ohm. Ideal for RF & microwave applications requiring compact, high-performance amplification in temperature range -40 to 85°C.
TQP3M9008 by Triquint Semiconductor

TQP3M9008

Triquint Semiconductor

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; No. of Functions: 1; Construction: COMPONENT;
HMC5879LS7 by Hittite Microwave

HMC5879LS7

Hittite Microwave

WIDE BAND HIGH POWER;
TGA4521 by Triquint Semiconductor

TGA4521

Triquint Semiconductor

WIDE BAND MEDIUM POWER; Technology: GAAS; Construction: COMPONENT; Package Equivalence Code: DIE OR CHIP; Power Supplies (V): 6; JESD-609 Code: e3/e4;