Broadcom - ALM31122-TR1G

  1. Home
  2. Broadcom - ALM31122-TR1G
ALM31122-TR1G by Broadcom

Image shown is a representation only.

Manufacturer Broadcom
Manufacturer's Part Number ALM31122-TR1G
Description WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 22; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Power Supplies (V): 5;
Datasheet ALM31122-TR1G Datasheet
In Stock350
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Construction: COMPONENT
Minimum Operating Frequency: 700 MHz
Sub-Category: RF/Microwave Amplifiers
Maximum Supply Current: 440 mA
Minimum Operating Temperature: -40 Cel
Mounting Feature: SURFACE MOUNT
No. of Functions: 1
No. of Terminals: 22
Maximum Input Power (CW): 25 dBm
Package Equivalence Code: LCC22(UNSPEC)
Technology: GAAS
Characteristic Impedance: 50 ohm
Maximum Operating Temperature: 85 Cel
Maximum Operating Frequency: 1000 MHz
RF or Microwave Device Type: WIDE BAND MEDIUM POWER
Gain: 13.7 dB
Power Supplies (V): 5
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
350 $4.060 $1,421.000

Popular Products

Category Top Products

HMC564LC4TR by Hittite Microwave

HMC564LC4TR

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: CERAMIC; Technology: GAAS; Maximum Input Power (CW): 5 dBm;
HMC637ALP5E by Hittite Microwave

HMC637ALP5E

Hittite Microwave

WIDE BAND MEDIUM POWER; Minimum Operating Temperature: -40 Cel; Gain: 12 dB; Characteristic Impedance: 50 ohm; Maximum Operating Frequency: 6000 MHz; Minimum Operating Frequency: 0 MHz;
SBF-4089Z by Qorvo

SBF-4089Z

Qorvo

Qorvo's SBF-4089Z is a GAAS RF amplifier with 13.2 dB gain, operating from 0 to 500 MHz. It has a max input power of 19 dBm and operates at temperatures ranging from -40 to 85°C. Ideal for wideband low-power applications, it features a surface-mount package with matte tin terminals.
MGA-81563-TR1 by Agilent Technologies

MGA-81563-TR1

Agilent Technologies

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; JESD-609 Code: e0;
LEE-29 by Mini-circuits

LEE-29

Mini-circuits

Mini-circuits LEE-29 is a wide band low power RF amplifier with 13.3 dB gain, handling up to 15 dBm CW input power. It operates from 0 to 8000 MHz, with VSWR of 1.6 and characteristic impedance of 50 ohm. Ideal for RF & microwave applications requiring compact, high-performance amplification in temperature range -40 to 85°C.
TCBT-14+ by Mini-circuits

TCBT-14+

Mini-circuits

TCBT-14+ by Mini-circuits is a wide band low power RF amplifier with max input power of 30 dBm and VSWR of 1.5. Operating from 10 MHz to 10 GHz, it's ideal for RF & microwave applications requiring high performance in a compact form factor. With gold over nickel finish, it ensures reliable operation in temperatures ranging from -40°C to 85°C.
TGA2958-SM by Qorvo

TGA2958-SM

Qorvo

Qorvo's TGA2958-SM is a GAN technology RF amplifier with 25 dB gain, operating from 13-18 GHz. It has a max input power of 20 dBm and VSWR of 3, suitable for wideband high-power applications in RF & microwave systems. The component features surface mounting and requires -2.7 to 20V supply voltage at 70mA max current.
MGA-87563-BLKG by Agilent Technologies

MGA-87563-BLKG

Agilent Technologies

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Voltage Standing Wave Ratio: 1.8;
NBB-400-T1 by Qorvo

NBB-400-T1

Qorvo

Qorvo's NBB-400-T1 is a ceramic RF amplifier with 20 dBm CW input power, 1.9 VSWR, and 15.5 dB gain. Ideal for wideband low-power applications in the 0-8000 MHz range, it operates at temperatures from -45 to 85°C and requires a 3.9V supply voltage.
MMZ25332BT1 by NXP Semiconductors

MMZ25332BT1

NXP Semiconductors

NXP Semiconductors' MMZ25332BT1 is a RF amplifier with 5V power supply, 12 terminals, and 412mA max supply current. It features bipolar technology, wide band medium power for surface mount applications in RF & microwave systems.
GALI-51F+ by Mini-circuits

GALI-51F+

Mini-circuits

GALI-51F+ by Mini-circuits is a wide band low power RF amplifier with 14 dB gain, operating from 0 to 4000 MHz. It has a max input power of 13 dBm and VSWR of 1.7, suitable for RF & microwave applications requiring high performance in a compact package. The component is constructed using bipolar technology and can operate in temperatures ranging from -45 to 85°C.
TGA2701-SM by Triquint Semiconductor

TGA2701-SM

Triquint Semiconductor

WIDE BAND HIGH POWER; Maximum Input Power (CW): 29 dBm; Construction: COMPONENT; Maximum Operating Frequency: 8500 MHz; Gain: 18 dB; Minimum Operating Frequency: 5900 MHz;
XP1050-QJ-0G00 by Mimix Broadband

XP1050-QJ-0G00

Mimix Broadband

WIDE BAND HIGH POWER; Construction: COMPONENT; JESD-609 Code: e3; Terminal Finish: Matte Tin (Sn); Minimum Operating Frequency: 7000 MHz; Minimum Operating Temperature: -40 Cel;
TQP3M9009 by Qorvo

TQP3M9009

Qorvo

TQP3M9009 by Qorvo is a wide band medium power RF amplifier with 20 dB gain and 50 ohm impedance. It operates from 50 MHz to 4000 MHz, with a max input power of 23 dBm. This component is ideal for applications requiring high frequency amplification in RF and microwave systems.
MGA-72543-BLK by Broadcom

MGA-72543-BLK

Broadcom

Broadcom's MGA-72543-BLK is a GAAS technology RF amplifier with 9.2 dB gain, operating from 100 MHz to 6 GHz. It has a max input power of 20 dBm and VSWR of 2.1, suitable for wideband low-power applications in RF & microwave systems.
TQP369184 by Triquint Semiconductor

TQP369184

Triquint Semiconductor

WIDE BAND LOW POWER; Characteristic Impedance: 50 ohm; Maximum Input Power (CW): 24 dBm; Minimum Operating Frequency: 0 MHz; Construction: COMPONENT; Gain: 19 dB;
RF5110G by Rf Micro Devices

RF5110G

Rf Micro Devices

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Characteristic Impedance: 50 ohm;
MGA-61563-TR2G by Agilent Technologies

MGA-61563-TR2G

Agilent Technologies

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Supply Current: 48 mA;
HMC5805ALS6TR by Analog Devices

HMC5805ALS6TR

Analog Devices

Analog Devices' HMC5805ALS6TR is a wide band low power RF amplifier with 9 dB gain and 22 dBm max input power. Operating from -40 to 85°C, it covers frequencies up to 40 GHz. Ideal for RF and microwave applications requiring high performance in a compact form factor.
HMC441LP3TR by Hittite Microwave

HMC441LP3TR

Hittite Microwave

WIDE BAND LOW POWER; Maximum Operating Frequency: 13500 MHz; Construction: COMPONENT; Characteristic Impedance: 50 ohm; Gain: 10 dB; Maximum Input Power (CW): 15 dBm;