Broadcom - AMT-12433

  1. Home
  2. Broadcom - AMT-12433
AMT-12433 by Broadcom

Image shown is a representation only.

Manufacturer Broadcom
Manufacturer's Part Number AMT-12433
Description WIDE BAND LOW POWER; Construction: MODULE; Maximum Voltage Standing Wave Ratio: 2; Characteristic Impedance: 50 ohm; Maximum Operating Frequency: 12400 MHz; Minimum Operating Frequency: 7000 MHz;
Datasheet AMT-12433 Datasheet
In Stock435
NAME DESCRIPTION
Maximum Voltage Standing Wave Ratio: 2
Construction: MODULE
Minimum Operating Frequency: 7000 MHz
Characteristic Impedance: 50 ohm
Maximum Operating Frequency: 12400 MHz
RF or Microwave Device Type: WIDE BAND LOW POWER
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
435 - -

Popular Products

Category Top Products

HMC462-SX by Analog Devices

HMC462-SX

Analog Devices

HMC462-SX by Analog Devices is a PHEMT technology RF amplifier with 12.5 dB gain, operating from 2-20 GHz. It has a max input power of 18 dBm and VSWR of 1.25, making it ideal for wideband low-power applications in RF and microwave systems. With a compact surface-mount construction and requiring only 5V supply voltage, it offers high performance in a small form factor.
SST12LP08-QXBE by Silicon Storage Technology

SST12LP08-QXBE

Silicon Storage Technology

NARROW BAND MEDIUM POWER; Maximum Input Power (CW): 5 dBm; Additional Features: HIGH RELIABILITY; Maximum Operating Frequency: 2484 MHz; Gain: 29 dB; Maximum Operating Temperature: 85 Cel;
SMA3107-TL-E by Sanyo Semiconductor

SMA3107-TL-E

Sanyo Semiconductor

WIDE BAND LOW POWER;
MW7IC2725NBR1 by Freescale Semiconductor

MW7IC2725NBR1

Freescale Semiconductor

NARROW BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: MOS; Terminal Finish: Matte Tin (Sn); Characteristic Impedance: 50 ohm; Construction: COMPONENT;
RF5110G by Rf Micro Devices

RF5110G

Rf Micro Devices

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Characteristic Impedance: 50 ohm;
ADL8107ACPZN-R7 by Analog Devices

ADL8107ACPZN-R7

Analog Devices

ADL8107ACPZN-R7 by Analog Devices is a PHEMT RF amplifier with 18dB gain, operating from 6-18GHz. It has a max input power of 22dBm and VSWR of 1.54, suitable for wideband low-power applications in RF & microwave systems. With surface mount construction and 8 terminals, it operates b/w -40 to 85°C with a +5V supply.
HMC902LP3ETR by Hittite Microwave

HMC902LP3ETR

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Operating Frequency: 10000 MHz;
HMC752LC4TR by Hittite Microwave

HMC752LC4TR

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: CERAMIC; Technology: GAAS; Maximum Operating Temperature: 85 Cel;
TQP369184 by Qorvo

TQP369184

Qorvo

Qorvo's TQP369184 is a wide band low power RF amplifier with 18.8 dB gain and 24 dBm max input power. Operating from -40 to 105°C, it covers frequencies from 0 to 6000 MHz, making it ideal for various RF and microwave applications.
MW7IC2220NR1 by Freescale Semiconductor

MW7IC2220NR1

Freescale Semiconductor

NARROW BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: MOS; Maximum Operating Temperature: 150 Cel; Maximum Operating Frequency: 2200 MHz; Characteristic Impedance: 50 ohm;
HMC5805ALS6 by Analog Devices

HMC5805ALS6

Analog Devices

Analog Devices' HMC5805ALS6 is a wide band low power RF amplifier with 9 dB gain and 50 ohm impedance. It operates from 0 to 40 GHz, handling up to 22 dBm CW input power. Ideal for applications requiring high frequency amplification in extreme temperature environments.
HMC5879LS7 by Hittite Microwave

HMC5879LS7

Hittite Microwave

WIDE BAND HIGH POWER;
TQP7M9106 by Qorvo

TQP7M9106

Qorvo

Qorvo's TQP7M9106 is a wide band high power RF amplifier with 19 dB gain, operating from 50 MHz to 1500 MHz. It can handle up to 30 dBm CW input power and has a max VSWR of 10. Ideal for applications requiring high power amplification in RF & microwave systems.
HMC797LP5E by Hittite Microwave

HMC797LP5E

Hittite Microwave

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Minimum Operating Temperature: -55 Cel;
HELA-10D by Mini-circuits

HELA-10D

Mini-circuits

HELA-10D by Mini-circuits is a wideband medium power RF amplifier with 9.3 dB gain, handling up to 20 dBm CW input power. It operates b/w 8-300 MHz frequencies with VSWR of 1.2, suitable for various RF and microwave applications requiring a 50 ohm impedance.
CMD245C4 by Qorvo

CMD245C4

Qorvo

Qorvo's CMD245C4 is a wide band low power RF amplifier with 14 dB gain, operating from 6-18 GHz. It can handle up to 17 dBm CW input power and has a temperature range of -55 to +85°C. Ideal for RF & microwave applications requiring high performance in compact designs.
SGA-3563 by Sirenza Microdevices

SGA-3563

Sirenza Microdevices

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Construction: COMPONENT;
HMC441LH5TR by Hittite Microwave

HMC441LH5TR

Hittite Microwave

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 12; Package Body Material: CERAMIC; Technology: GAAS; Minimum Operating Temperature: -40 Cel;
MGA-30689-BLKG by Broadcom

MGA-30689-BLKG

Broadcom

Broadcom's MGA-30689-BLKG is a GAAS RF amplifier with 13.7 dB gain, operating from 40 MHz to 3000 MHz. It has a max input power of 20 dBm and requires a 5V power supply, making it ideal for wideband medium-power applications in RF and microwave systems.
PSA4-5043+ by Mini-circuits

PSA4-5043+

Mini-circuits

Mini-circuits PSA4-5043+ is a wideband low power RF amplifier with 16.5 dB gain, operating from 50 MHz to 4000 MHz. It can handle up to 23 dBm CW input power and operates b/w -40°C to 85°C. Ideal for RF & microwave applications requiring high gain and broad frequency coverage.