Broadcom - AWT186P20U27-40R

The Qorvo SGL0363ZSR is a wide band low power RF amplifier with 15 dB gain and 50 ohm impedance. It operates from 5 MHz to 2000 MHz, with a max input power of 18 dBm. This component is ideal for RF and microwave applications requiring high performance in a compact package.

BGB741L7ESD-E6327 by Infineon Technologies is a RF & Microwave Amplifier with 3V power supply, 7 terminals, and gold finish. It operates on bipolar technology with a max current of 7.2mA. Ideal for surface mount applications in various electronic devices.

WIDE BAND MEDIUM POWER; Technology: GAAS; Construction: COMPONENT; Package Equivalence Code: DIE OR CHIP; Power Supplies (V): 6; JESD-609 Code: e3/e4;

Broadcom's MGA-81563-TR1 is a GAAS RF amplifier with 10.5 dB gain, operating from 100 MHz to 6 GHz. It has a max input power of 13 dBm and VSWR of 2, suitable for wideband low-power applications in RF and microwave systems. The component is housed in a plastic/epoxy package, operates at temperatures b/w -40°C to 85°C, and requires a 3V power supply.

WIDE BAND MEDIUM POWER;

SGA3363Z by Qorvo is a RF amplifier with 15.5 dB gain, operating from 0 to 5500 MHz. It has a max input power of 18 dBm and operates at temperatures ranging from -40 to 85°C. Ideal for wide band low power applications, this component features a plastic/epoxy package and requires a 2.6V power supply.

Analog Devices' HMC863ALC4 is a wide band medium power RF amplifier with 20.5 dB gain, operating from 24-29.5 GHz. It can handle up to 26 dBm CW input power and has a VSWR of 7, making it ideal for RF and microwave applications requiring high performance in the -40 to 85°C temperature range.

WIDE BAND LOW POWER; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Input Power (CW): 5 dBm; Maximum Operating Frequency: 3600 MHz; Characteristic Impedance: 50 ohm; Gain: 15.5 dB;

Qorvo's SBB4089Z is a wide band low power RF amplifier with 13.5 dB gain, operating from 50 MHz to 6 GHz. It has a max input power of 24 dBm and operates on a 5V supply with a current draw of 92 mA. Ideal for applications requiring surface mount construction in RF and microwave systems.

WIDE BAND MEDIUM POWER; Gain: 27 dB; Terminal Finish: Gold (Au) - with Nickel (Ni) barrier; Construction: COMPONENT; Maximum Operating Temperature: 85 Cel; Minimum Operating Frequency: 9500 MHz;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Operating Temperature: 85 Cel;

Qorvo's NBB-400-D is a wide band low power RF amplifier with 15.5 dB gain, suitable for frequencies ranging from 0 to 8000 MHz. It can handle up to 20 dBm CW input power and has a VSWR of 1.9, making it ideal for various RF and microwave applications. Operating temperatures range from -45°C to 85°C, with a characteristic impedance of 50 ohms.

Analog Devices' HMC374ETR is a wide band medium power RF amplifier with 6dB gain, operating from 300MHz to 3GHz. It has a max input power of 15dBm and operates on a 5V power supply. Ideal for applications requiring surface mount construction in RF & microwave systems.

WIDE BAND LOW POWER; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Power Supplies (V): 3; Maximum Operating Frequency: 6000 MHz; Construction: COMPONENT;

NXP Semiconductors' MMZ25332BT1 is a RF amplifier with 5V power supply, 12 terminals, and 412mA max supply current. It features bipolar technology, wide band medium power for surface mount applications in RF & microwave systems.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Operating Frequency: 10000 MHz;

WIDE BAND LOW POWER; Characteristic Impedance: 50 ohm; Additional Features: HIGH RELIABILITY; Maximum Voltage Standing Wave Ratio: 1.7; Gain: 10 dB; Maximum Operating Frequency: 1300 MHz;

RF/Microwave Amplifiers;

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: CERAMIC; Technology: GAAS; Gain: 9 dB;

HMC409LP4ETR by Analog Devices is a RF amplifier with 28 dB gain, operating frequency range of 3.3-3.8 GHz, and max input power of 10 dBm. It is designed for narrowband medium power applications in RF & microwave systems requiring a characteristic impedance of 50 ohms. The component features a surface mount package body material made of plastic/epoxy, suitable for temperatures ranging from -40 to 85°C.