Broadcom - HST9-B380

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HST9-B380 by Broadcom

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Manufacturer Broadcom
Manufacturer's Part Number HST9-B380
Description PHOTO TRANSISTOR;
Datasheet HST9-B380 Datasheet
In Stock231
NAME DESCRIPTION
Optoelectronic Type: PHOTO TRANSISTOR
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Pricing (USD)

Qty. Unit Price Ext. Price
231 $0.511 $118.041

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SFH300 by Infineon Technologies

SFH300

Infineon Technologies

Infineon's SFH300 phototransistor operates b/w -55°C to 100°C with peak wavelength of 850nm. It has a max power dissipation of 0.47W and response time of 0.00001s. Ideal for applications requiring through hole mounting, it can handle a max on state current of 0.05A.
BPY62-4 by Siemens

BPY62-4

Siemens

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Shape: ROUND; Peak Wavelength (nm): 850; Nominal Light Current: 7.2 mA;
TPS608A by Toshiba

TPS608A

Toshiba

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Nominal Light Current: .1 mA; Additional Features: SIDE VIEW; Maximum Operating Temperature: 85 Cel; Peak Wavelength (nm): 820;
BPX38-6 by Infineon Technologies

BPX38-6

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Minimum Operating Temperature: -55 Cel; JESD-609 Code: e0; Maximum Response Time: .000015 s;
SFH300FA2 by Infineon Technologies

SFH300FA2

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Peak Wavelength (nm): 900; Maximum Response Time: .0000075 s; JESD-609 Code: e0;
BPX86 by Osram Opto Semiconductors

BPX86

Osram Opto Semiconductors

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Nickel (Sn/Ni); No. of Functions: 6; Minimum Operating Temperature: -40 Cel; Infrared (IR) Range: YES;
TPS608A-B by Toshiba

TPS608A-B

Toshiba

PHOTO TRANSISTOR; Maximum Operating Temperature: 85 Cel; No. of Functions: 1; Minimum Collector-emitter Breakdown Voltage: 30 V; Shape: ROUND; Additional Features: SIDE VIEW;
QSD724 by Onsemi

QSD724

Onsemi

The Onsemi QSD724 is a single phototransistor with peak wavelength of 880nm. It operates b/w -40 to 100 °C, with max power dissipation of 0.1W and response time of 0.00001s. Ideal for IR applications, it has a collector-emitter breakdown voltage of 30V and nominal light current of 3.5mA.
SPS1118C by Onsemi

SPS1118C

Onsemi

The Onsemi SPS1118C is a phototransistor with peak wavelength of 880nm. It has a max operating temp of 75 °C and min temp of -20°C. With max power dissipation of 0.07W, it's ideal for THROUGH HOLE MOUNT applications requiring low dark current (<200nA).
SPS103C by Onsemi

SPS103C

Onsemi

The Onsemi SPS103C is a phototransistor with peak wavelength of 900nm, max temp of 100 °C, and dark current of 100nA. Ideal for applications requiring through hole mounting, it has a max power dissipation of 0.05W and on-state current of 0.02A.
TEST2600 by Vishay Intertechnology

TEST2600

Vishay Intertechnology

TEST2600 by Vishay Intertechnology is a single phototransistor with peak wavelength of 920nm. It operates b/w -40°C to 85°C, with max power dissipation of 0.1W. Ideal for applications requiring infrared detection and collector-emitter breakdown voltage of 70V in through hole mounting setups.
TPS621(A) by Toshiba

TPS621(A)

Toshiba

PHOTO TRANSISTOR; Additional Features: SIDE VIEW; No. of Functions: 1; Shape: ROUND; Minimum Collector-emitter Breakdown Voltage: 30 V; Configuration: SINGLE;
BP103-5 by Infineon Technologies

BP103-5

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Maximum Power Dissipation: .3 W; Maximum Dark Current: 100 nA;
BPX84 by Siemens

BPX84

Siemens

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; No. of Functions: 4; Maximum Response Time: .000008 s;
QSB363ZR by Fairchild Semiconductor

QSB363ZR

Fairchild Semiconductor

PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Terminal Finish: Matte Tin (Sn); Minimum Collector-emitter Breakdown Voltage: 30 V; Configuration: SINGLE; Maximum Dark Current: 100 nA;
TPS606(LB)-B by Toshiba

TPS606(LB)-B

Toshiba

PHOTO TRANSISTOR; Configuration: SINGLE; Shape: ROUND; Nominal Light Current: .01 mA; Infrared (IR) Range: NO; Minimum Collector-emitter Breakdown Voltage: 20 V;
QSE213C by Rochester Electronics

QSE213C

Rochester Electronics

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Maximum Dark Current: 100 nA; Peak Wavelength (nm): 880; Shape: ROUND; Maximum Operating Temperature: 100 Cel;
SFH3204-Z by Osram Opto Semiconductors

SFH3204-Z

Osram Opto Semiconductors

SFH3204-Z by Osram Opto Semiconductors is a single phototransistor with peak wavelength of 920nm. It operates b/w -40 to 100°C, with max on-state current of 0.015A. Ideal for applications requiring IR detection in surface mount configurations.
ASDL-6620-D22 by Broadcom

ASDL-6620-D22

Broadcom

PHOTO TRANSISTOR; Terminal Finish: Matte Tin (Sn); Size: 5 mm; Maximum Operating Temperature: 85 Cel; No. of Functions: 1; JESD-609 Code: e3;
TPS622(A,F) by Toshiba

TPS622(A,F)

Toshiba

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Shape: ROUND; Minimum Collector-emitter Breakdown Voltage: 30 V; Maximum Power Dissipation: .075 W; Peak Wavelength (nm): 870;