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| Manufacturer | Diodes Incorporated |
|---|---|
| Manufacturer's Part Number | DMN1032UCB4-7 |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Package Body Material: PLASTIC/EPOXY; JESD-30 Code: S-PBGA-B4; |
| Datasheet | DMN1032UCB4-7 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 4.5 A |
| Surface Mount: | YES |
| Terminal Finish: | TIN SILVER COPPER |
| No. of Terminals: | 4 |
| Terminal Position: | BOTTOM |
| Package Style (Meter): | GRID ARRAY |
| JESD-30 Code: | S-PBGA-B4 |
| No. of Elements: | 1 |
| Package Shape: | SQUARE |
| Terminal Form: | BALL |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Drain-Source On Resistance: | .038 ohm |
| Other Names: |
DMN1032UCB4-7DIDKR DMN1032UCB4-7DICT DMN1032UCB4-7DITR |
| Maximum Feedback Capacitance (Crss): | 47 pF |
| Polarity or Channel Type: | N-CHANNEL |
| JESD-609 Code: | e1 |
| Minimum DS Breakdown Voltage: | 12 V |
| Additional Features: | HIGH RELIABILITY |
| Reference Standard: | AEC-Q101 |
| Peak Reflow Temperature (C): | 260 |
