Image shown is a representation only.
| Manufacturer | Diodes Incorporated |
|---|---|
| Manufacturer's Part Number | DMN1045UFR4-7 |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Peak Reflow Temperature (C): 260; Transistor Element Material: SILICON; No. of Terminals: 3; |
| Datasheet | DMN1045UFR4-7 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 3.2 A |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | YES |
| Terminal Finish: | NICKEL PALLADIUM GOLD |
| JESD-609 Code: | e4 |
| No. of Terminals: | 3 |
| Minimum DS Breakdown Voltage: | 12 V |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | S-PDSO-N3 |
| No. of Elements: | 1 |
| Package Shape: | SQUARE |
| Terminal Form: | NO LEAD |
| Operating Mode: | ENHANCEMENT MODE |
| Case Connection: | DRAIN |
| Peak Reflow Temperature (C): | 260 |
| Maximum Drain-Source On Resistance: | .064 ohm |
| Moisture Sensitivity Level (MSL): | 1 |
