Diodes Incorporated - DMN2050LFDB-13

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DMN2050LFDB-13 by Diodes Incorporated

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Manufacturer Diodes Incorporated
Manufacturer's Part Number DMN2050LFDB-13
Description N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.42 W; Maximum Drain-Source On Resistance: .045 ohm; Maximum Drain Current (Abs) (ID): 4.5 A;
Datasheet DMN2050LFDB-13 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 3.3 A
Maximum Pulsed Drain Current (IDM): 25 A
Sub-Category: FET General Purpose Powers
Surface Mount: YES
Terminal Finish: NICKEL PALLADIUM GOLD
No. of Terminals: 6
Maximum Power Dissipation (Abs): 1.42 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: S-PDSO-N6
No. of Elements: 2
Package Shape: SQUARE
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .045 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 4.5 mJ
Maximum Feedback Capacitance (Crss): 63 pF
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e4
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 20 V
Additional Features: HIGH RELIABILITY
Reference Standard: AEC-Q101
Maximum Drain Current (Abs) (ID): 4.5 A
Peak Reflow Temperature (C): 260
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