Diodes Incorporated - DMN2450UFB4-7R

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DMN2450UFB4-7R by Diodes Incorporated

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Manufacturer Diodes Incorporated
Manufacturer's Part Number DMN2450UFB4-7R
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .9 W; Transistor Application: SWITCHING; Maximum Operating Temperature: 150 Cel;
Datasheet DMN2450UFB4-7R Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 1 A
Surface Mount: YES
Terminal Finish: NICKEL PALLADIUM GOLD
No. of Terminals: 3
Maximum Power Dissipation (Abs): .9 W
Terminal Position: BOTTOM
Package Style (Meter): CHIP CARRIER
JESD-30 Code: R-PBCC-N3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .4 ohm
Moisture Sensitivity Level (MSL): 1
Maximum Feedback Capacitance (Crss): 7.3 pF
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e4
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 20 V
Peak Reflow Temperature (C): 260
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