Diodes Incorporated - DMN3022LDG-7

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DMN3022LDG-7 by Diodes Incorporated

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Manufacturer Diodes Incorporated
Manufacturer's Part Number DMN3022LDG-7
Description N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.96 W; Maximum Feedback Capacitance (Crss): 10.6 pF; Operating Mode: ENHANCEMENT MODE;
Datasheet DMN3022LDG-7 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 7.6 A
Maximum Pulsed Drain Current (IDM): 50 A
Surface Mount: YES
Terminal Finish: MATTE TIN
No. of Terminals: 8
Maximum Power Dissipation (Abs): 1.96 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: S-PDSO-N8
No. of Elements: 2
Package Shape: SQUARE
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: SOURCE
Maximum Power Dissipation Ambient: 1.96 W
Maximum Drain-Source On Resistance: .022 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 28 mJ
Maximum Feedback Capacitance (Crss): 10.6 pF
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 30 V
Reference Standard: MIL-STD-202
Peak Reflow Temperature (C): 260
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