DMN3055LFDB-13 by Diodes Incorporated | Transistors

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Manufacturer	Diodes Incorporated
Manufacturer's Part Number	DMN3055LFDB-13
Description	N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.36 W; JESD-609 Code: e4; Maximum Feedback Capacitance (Crss): 44 pF;
Datasheet	DMN3055LFDB-13 Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Feedback Capacitance (Crss):	44 pF
Maximum Drain Current (ID):	5 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
Terminal Finish:	NICKEL PALLADIUM GOLD
JESD-609 Code:	e4
Minimum Operating Temperature:	-55 Cel
No. of Terminals:	6
Minimum DS Breakdown Voltage:	30 V
Maximum Power Dissipation (Abs):	1.36 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	S-PDSO-N6
No. of Elements:	2
Package Shape:	SQUARE
Terminal Form:	NO LEAD
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	.04 ohm

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