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Manufacturer | Diodes Incorporated |
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Manufacturer's Part Number | DMP1007UCB9-7 |
Description | P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.53 W; Maximum Pulsed Drain Current (IDM): 80 A; Transistor Application: SWITCHING; |
Datasheet | DMP1007UCB9-7 Datasheet |
NAME | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Configuration: | SINGLE WITH BUILT-IN DIODE AND RESISTOR |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Drain Current (ID): | 13.2 A |
Maximum Pulsed Drain Current (IDM): | 80 A |
Surface Mount: | YES |
Terminal Finish: | TIN SILVER COPPER |
No. of Terminals: | 9 |
Maximum Power Dissipation (Abs): | 1.53 W |
Terminal Position: | BOTTOM |
Package Style (Meter): | GRID ARRAY |
JESD-30 Code: | S-PBGA-B9 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | BALL |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 150 Cel |
Maximum Drain-Source On Resistance: | .0057 ohm |
Maximum Feedback Capacitance (Crss): | 158 pF |
Polarity or Channel Type: | P-CHANNEL |
JESD-609 Code: | e1 |
Minimum Operating Temperature: | -55 Cel |
Minimum DS Breakdown Voltage: | 8 V |
Peak Reflow Temperature (C): | 260 |