DMP210DUFB4-7B by Diodes Incorporated | Transistors

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Manufacturer	Diodes Incorporated
Manufacturer's Part Number	DMP210DUFB4-7B
Description	P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Maximum Drain Current (Abs) (ID): .2 A; Transistor Element Material: SILICON;
Datasheet	DMP210DUFB4-7B Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	.14 A
Sub-Category:	Other Transistors
Surface Mount:	YES
Terminal Finish:	Nickel/Palladium/Gold (Ni/Pd/Au)
No. of Terminals:	3
Maximum Power Dissipation (Abs):	.35 W
Terminal Position:	BOTTOM
Package Style (Meter):	CHIP CARRIER
JESD-30 Code:	R-PBCC-N3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	NO LEAD
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	5.5 ohm
Moisture Sensitivity Level (MSL):	1
Maximum Feedback Capacitance (Crss):	20 pF
Polarity or Channel Type:	P-CHANNEL
JESD-609 Code:	e4
Minimum DS Breakdown Voltage:	20 V
Additional Features:	HIGH RELIABILITY, LOW THRESHOLD
Maximum Drain Current (Abs) (ID):	.2 A
Peak Reflow Temperature (C):	260

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