Diodes Incorporated - LCS110P02A

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LCS110P02A by Diodes Incorporated

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Manufacturer Diodes Incorporated
Manufacturer's Part Number LCS110P02A
Description Power Field-Effect Transistors;
Datasheet LCS110P02A Datasheet
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IRFL9014TRPBF-BE3 by Vishay Intertechnology

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Vishay Intertechnology's IRFL9014TRPBF-BE3 is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 14A IDM and 140mJ EAS, suitable for high-power operations. With a compact GULL WING package style and -55 to 150 °C operating temperature range, it offers reliable performance in various electronic devices.
FQB22P10TM by Onsemi

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FQB22P10TM by Onsemi is a P-CHANNEL Power FET with 100V DS Breakdown Voltage, 88A IDM, and 0.125 ohm RDS. Ideal for SWITCHING applications, it features a built-in DIODE in a RECTANGULAR package with GULL WING terminals. Operating in ENHANCEMENT MODE, it has an EAS of 710 mJ and can handle up to 125W power dissipation at 175°C.
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BSP149H6327XTSA1 by Infineon Technologies

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IRF3415STRLPBF by International Rectifier

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FQD7P20TM by Fairchild Semiconductor

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P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 55 W; Peak Reflow Temperature (C): 260; Transistor Application: SWITCHING;
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IRFP460APBF by Vishay Intertechnology

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Vishay Intertechnology

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International Rectifier

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International Rectifier

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