Diodes Incorporated - LCS31N03K

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LCS31N03K by Diodes Incorporated

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Manufacturer Diodes Incorporated
Manufacturer's Part Number LCS31N03K
Description Small Signal Field-Effect Transistors;
Datasheet LCS31N03K Datasheet
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BSS138NL6327 by Infineon Technologies

BSS138NL6327

Infineon Technologies

BSS138NL6327 by Infineon is a N-CHANNEL FET with 60V DS breakdown voltage, 0.23A drain current, and 3.5 ohm on-resistance. Ideal for small outline applications requiring a single transistor with built-in diode in enhancement mode operation. Suitable for use in automotive electronics due to AEC-Q101 reference standard compliance.
2N7002K by Formosa Microsemi

2N7002K

Formosa Microsemi

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Elements: 1;
BSS131E6327 by Siemens

BSS131E6327

Siemens

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Feedback Capacitance (Crss): 5 pF; Package Style (Meter): SMALL OUTLINE; Transistor Element Material: SILICON;
SI4816BDY-T1-E3 by Vishay Siliconix

SI4816BDY-T1-E3

Vishay Siliconix

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Package Body Material: PLASTIC/EPOXY; Moisture Sensitivity Level (MSL): 1;
2N7002 by Continental Device India

2N7002

Continental Device India

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .83 W; Package Body Material: PLASTIC/EPOXY; JEDEC-95 Code: TO-236AB;
SI2319CDS-T1-GE3 by Vishay Intertechnology

SI2319CDS-T1-GE3

Vishay Intertechnology

SI2319CDS-T1-GE3 by Vishay Intertechnology is a P-channel FET with 40V breakdown voltage and 4.4A drain current. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 2.5W. The small outline package and -55 to 150°C operating temperature range make it suitable for various electronic designs.
ZXMP4A16GTA by Diodes Incorporated

ZXMP4A16GTA

Diodes Incorporated

ZXMP4A16GTA by Diodes Inc. is a P-CHANNEL FET with 40V DS breakdown voltage, 4.6A max drain current, and 0.06 ohm RDS(on). Ideal for switching applications in automotive electronics due to AEC-Q101 compliance and ENHANCEMENT MODE operation at up to 150°C.
2N7000/D74Z by National Semiconductor

2N7000/D74Z

National Semiconductor

2N7000/D74Z by National Semiconductor is a N-CHANNEL FET with 60V DS Breakdown Voltage. It operates in ENHANCEMENT MODE for SWITCHING applications, with 0.2A ID and 5 ohm RDS(on). Suitable for low-power circuits due to 0.4W Pdiss and 150°C Tjmax.
FDS4435BZ by Fairchild Semiconductor

FDS4435BZ

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Package Style (Meter): SMALL OUTLINE; No. of Terminals: 8;
BSS138 by Good-ark Electronics

BSS138

Good-ark Electronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: 6 ohm; Minimum DS Breakdown Voltage: 50 V; Operating Mode: ENHANCEMENT MODE;
BSS138-G by Comchip Technology

BSS138-G

Comchip Technology

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Peak Reflow Temperature (C): NOT SPECIFIED; No. of Elements: 1;
2N7002 by Jiangsu Changjiang Electronics Technology

2N7002

Jiangsu Changjiang Electronics Technology

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Operating Mode: ENHANCEMENT MODE; Transistor Application: SWITCHING;
BSS138 by NXP Semiconductors

BSS138

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 3; Maximum Drain Current (ID): .2 A; Operating Mode: ENHANCEMENT MODE;
FDN337N_NL by Fairchild Semiconductor

FDN337N_NL

Fairchild Semiconductor

Fairchild Semiconductor's FDN337N_NL is a N-CHANNEL FET for SWITCHING applications. It has a 30V DS Breakdown Voltage, 2A Drain Current, and 0.065 ohm On Resistance. With ENHANCEMENT MODE operation, it comes in a SMALL OUTLINE package with GULL WING terminals.
ZVP2106AM1 by Zetex Plc

ZVP2106AM1

Zetex Plc

P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Drain Current (Abs) (ID): .28 A; Minimum DS Breakdown Voltage: 60 V; Peak Reflow Temperature (C): 235;
FDMA1032CZ by Onsemi

FDMA1032CZ

Onsemi

FDMA1032CZ by Onsemi is a Small Signal FET with N-CHANNEL and P-CHANNEL configurations. It features 2 elements with built-in diode for switching applications. With a max drain current of 3.7A, it operates in enhancement mode at up to 150°C, making it suitable for various electronic devices.
BSS138W by Micro Commercial Components

BSS138W

Micro Commercial Components

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .34 W; Terminal Form: GULL WING; Additional Features: ULTRA-LOW RESISTANCE;
BSS123WQ-7-F by Diodes Incorporated

BSS123WQ-7-F

Diodes Incorporated

Diodes Inc. BSS123WQ-7-F is a N-channel FET with 100V DS breakdown voltage, 0.17A max drain current, and 6 ohm max on resistance. Ideal for switching applications in small outline packages, it operates from -55 to 150°C with matte tin finish and AEC-Q101 standard compliance.
FDS9431A_F085 by Fairchild Semiconductor

FDS9431A_F085

Fairchild Semiconductor

Fairchild Semiconductor's FDS9431A_F085 is a P-CHANNEL FET with 20V DS Breakdown Voltage and 3.5A Drain Current. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a RECTANGULAR PLASTIC package. Operating at up to 150°C, this MOSFET has 0.13 ohm On Resistance and GULL WING terminals for surface mounting.
2N7000 by Onsemi

2N7000

Onsemi

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; Maximum Drain-Source On Resistance: 5 ohm; Qualification: Not Qualified;