Diodes Incorporated - LV12C03S

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LV12C03S by Diodes Incorporated

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Manufacturer Diodes Incorporated
Manufacturer's Part Number LV12C03S
Description Power Field-Effect Transistors;
Datasheet LV12C03S Datasheet
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Vishay Intertechnology's IRFP460 is a N-CHANNEL FET with 500V DS Breakdown Voltage, ideal for SWITCHING applications. It features 80A IDM, 960mJ EAS, and 0.27 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max power dissipation of 280W at up to 150°C.
IRF7103TRPBF by Infineon Technologies

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2N7000 by Telcom Semiconductor

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JANTX2N6796 by Semicoa

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N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Reference Standard: MIL-19500; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Minimum DS Breakdown Voltage: 100 V;
RFD16N05LSM9A by Fairchild Semiconductor

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IRFR5305TRPBF by Infineon Technologies

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IRFR5305TRPBF by Infineon is a P-CHANNEL FET with 55V DS Breakdown Voltage, ideal for SWITCHING applications. It features 110A IDM and 0.065 ohm RDS(ON), operating in ENHANCEMENT MODE at -55 to 175 °C. The PLASTIC/EPOXY package with GULL WING terminals offers high power dissipation of 110W in a small outline style.
IRF530A by Onsemi

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The Onsemi IRF530A is a N-CHANNEL Power FET with 100V DS Breakdown Voltage and 14A Max ID. Ideal for SWITCHING applications, it features a 0.11 ohm Drain-Source Resistance and operates in ENHANCEMENT MODE up to 175°C.
IRFS4010TRLPBF by Infineon Technologies

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N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.7 W; Moisture Sensitivity Level (MSL): 1; Maximum Drain-Source On Resistance: .041 ohm;
RFD16N05LSM9A by Intersil

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Intersil

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 60 W; Terminal Finish: TIN LEAD; JEDEC-95 Code: TO-252AA;
BSC117N08NS5ATMA1 by Infineon Technologies

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ZXMP6A17E6TA by Diodes Incorporated

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FQD3P50TM by Onsemi

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FDS6982AS by Fairchild Semiconductor

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FQD2N100TM by Onsemi

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