Diodes Incorporated - UZXMP6A17E6TC

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UZXMP6A17E6TC by Diodes Incorporated

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Manufacturer Diodes Incorporated
Manufacturer's Part Number UZXMP6A17E6TC
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Minimum DS Breakdown Voltage: 60 V; Transistor Element Material: SILICON;
Datasheet UZXMP6A17E6TC Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 3 A
Maximum Pulsed Drain Current (IDM): 13.6 A
Polarity or Channel Type: P-CHANNEL
Surface Mount: YES
No. of Terminals: 6
Minimum DS Breakdown Voltage: 60 V
Qualification: Not Qualified
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G6
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum Drain-Source On Resistance: .125 ohm
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