Everlight Electronics - PT12-21C/TR8

  1. Home
  2. Everlight Electronics - PT12-21C/TR8
PT12-21C/TR8 by Everlight Electronics

Image shown is a representation only.

Manufacturer Everlight Electronics
Manufacturer's Part Number PT12-21C/TR8
Description PHOTO TRANSISTOR; Shape: RECTANGULAR; Peak Wavelength (nm): 940; Infrared (IR) Range: YES; Minimum Operating Temperature: -25 Cel; Minimum Collector-emitter Breakdown Voltage: 30 V;
Datasheet PT12-21C/TR8 Datasheet
NAME DESCRIPTION
Other Names: 3212210050
1080-1378-2
1080-1378-1
1080-1378-6
PT1221C/TR8
Maximum Dark Current: 100 nA
Shape: RECTANGULAR
Configuration: SINGLE
Size: 2 mm
Minimum Operating Temperature: -25 Cel
No. of Functions: 1
Infrared (IR) Range: YES
Optoelectronic Type: PHOTO TRANSISTOR
Nominal Light Current: 1.14 mA
Peak Wavelength (nm): 940
Maximum Operating Temperature: 85 Cel
Minimum Collector-emitter Breakdown Voltage: 30 V
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

TIL626 by Texas Instruments

TIL626

Texas Instruments

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .000008 s; Maximum Operating Temperature: 85 Cel; Minimum Operating Temperature: -40 Cel;
OP600B by Optek Technology

OP600B

Optek Technology

PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Size: 1.52 mm; Minimum Operating Temperature: -65 Cel; Nominal Light Current: .6 mA; Peak Wavelength (nm): 890;
BPW17N by Temic Semiconductors

BPW17N

Temic Semiconductors

PHOTO TRANSISTOR; Infrared (IR) Range: YES; Size: 1.8 mm; No. of Functions: 1; Configuration: SINGLE; Shape: ROUND;
SFH3219-Z by Osram Opto Semiconductors

SFH3219-Z

Osram Opto Semiconductors

SFH3219-Z by Osram Opto Semiconductors is a single phototransistor with a peak wavelength of 990nm. It operates b/w -40°C to 100°C, with a nominal light current of 0.063mA and max dark current of 50nA. Ideal for applications requiring infrared detection in compact spaces due to its small size of 2.575mm.
TEPT5600 by Vishay Intertechnology

TEPT5600

Vishay Intertechnology

TEPT5600 by Vishay Intertechnology is a 5mm round phototransistor with peak wavelength of 570nm. It operates b/w -40°C to 85°C, has a collector-emitter breakdown voltage of 6V, and can handle max on state current of 0.02A. Ideal for optoelectronic applications requiring precise light detection in various environments.
SD5443-004 by Micro Switch

SD5443-004

Micro Switch

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -55 Cel; Maximum Operating Temperature: 125 Cel; Maximum Dark Current: 100 nA; Maximum Response Time: .000015 s;
TIL616 by Texas Instruments

TIL616

Texas Instruments

TIL616 by Texas Instruments is a phototransistor with peak wavelength of 900nm. It has max operating temp of 125°C and min temp of -60°C. With response time of 0.000008s, it's ideal for applications requiring precise light detection in harsh environments.
SFH314-2 by Infineon Technologies

SFH314-2

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Dark Current: 200 nA; Maximum Response Time: .00001 s; JESD-609 Code: e0;
SFH310 by Infineon Technologies

SFH310

Infineon Technologies

SFH310 by Infineon Technologies is a phototransistor with peak wavelength of 780nm. It can operate b/w -55°C to 100°C, with max power dissipation of 0.165W and dark current of 5nA. Ideal for applications requiring fast response time (0.000007s) and on-state current up to 0.05A, featuring through-hole mounting.
HST9-B170 by Broadcom

HST9-B170

Broadcom

PHOTO TRANSISTOR;
TPS616(AB,F) by Toshiba

TPS616(AB,F)

Toshiba

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 900; No. of Functions: 1; Maximum Operating Temperature: 85 Cel; Maximum On State Current: .02 A;
NTE3122 by Nte Electronics

NTE3122

Nte Electronics

NTE3122 by Nte Electronics is a PHOTO DARLINGTON phototransistor with peak wavelength of 860nm. It operates b/w -25°C to 85°C, has max power dissipation of 0.075W, and max response time of 0.00008s. Ideal for applications requiring IR detection due to its infrared range capability.
SD5443-004 by Honeywell Sensing And Control

SD5443-004

Honeywell Sensing And Control

SD5443-004 by Honeywell is a PHOTO TRANSISTOR with max operating temp of 125°C and min of -55°C. It has a max power dissipation of 0.15W, dark current of 100nA, and response time of 0.000015s. Ideal for optoelectronic applications requiring through hole mounting.
BPX38-6 by Infineon Technologies

BPX38-6

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Minimum Operating Temperature: -55 Cel; JESD-609 Code: e0; Maximum Response Time: .000015 s;
SFH313FA-3 by Siemens

SFH313FA-3

Siemens

PHOTO TRANSISTOR; Peak Wavelength (nm): 870; Size: 5 mm; Shape: ROUND; Maximum Dark Current: 200 nA; No. of Functions: 1;
TPS614 by Toshiba

TPS614

Toshiba

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Configuration: SINGLE; Minimum Collector-emitter Breakdown Voltage: 40 V; Peak Wavelength (nm): 800;
TIED458 by Texas Instruments

TIED458

Texas Instruments

TIED458 by Texas Instruments is a phototransistor with peak wavelength of 820nm, max temp of 85°C, and response time of 0.00000001s. Ideal for applications requiring precise light detection in environments ranging from -40°C to 85°C.
SFH309PF2 by Infineon Technologies

SFH309PF2

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Response Time: .000005 s; Maximum Power Dissipation: .165 W; JESD-609 Code: e0;
TPS606(LB)-C by Toshiba

TPS606(LB)-C

Toshiba

PHOTO TRANSISTOR; Size: 1.65 mm; Nominal Light Current: .02 mA; Minimum Operating Temperature: -25 Cel; Peak Wavelength (nm): 720; Shape: ROUND;
TIL604 by Texas Instruments

TIL604

Texas Instruments

TIL604 by Texas Instruments is a single phototransistor with peak wavelength of 900nm. It operates b/w -60°C to 125°C, has response time of 0.000008s, and collector-emitter breakdown voltage of 50V. Ideal for applications requiring infrared detection in through hole mounting configurations.