Fairchild Semiconductor - FCH104N60F_F085

FCH104N60F_F085 by Fairchild Semiconductor

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Manufacturer Fairchild Semiconductor
Manufacturer's Part Number FCH104N60F_F085
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 357 W; Terminal Form: THROUGH-HOLE; JEDEC-95 Code: TO-247;
Datasheet FCH104N60F_F085 Datasheet
In Stock279
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Turn On Time (ton): 78 ns
Maximum Drain Current (ID): 37 A
Surface Mount: NO
Terminal Finish: Matte Tin (Sn) - annealed
No. of Terminals: 3
Maximum Power Dissipation (Abs): 357 W
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
Maximum Turn Off Time (toff): 131 ns
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: .104 ohm
Avalanche Energy Rating (EAS): 809 mJ
JEDEC-95 Code: TO-247
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 600 V
Reference Standard: AEC-Q101
Maximum Drain Current (Abs) (ID): 37 A
Peak Reflow Temperature (C): NOT SPECIFIED
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