Fairchild Semiconductor - FDD86567_F085

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FDD86567_F085 by Fairchild Semiconductor

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Manufacturer Fairchild Semiconductor
Manufacturer's Part Number FDD86567_F085
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Avalanche Energy Rating (EAS): 115 mJ; JESD-30 Code: R-PSSO-G2;
Datasheet FDD86567_F085 Datasheet
In Stock11,991
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Surface Mount: YES
No. of Terminals: 2
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0032 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 115 mJ
Other Names: FDD86567_F085
FDD86567_F085CT
FDD86567_F085TR
FDD86567_F085CT-ND
FDD86567-F085DKR
FDD86567_F085TR-ND
FDD86567_F085DKR
FDD86567-F085CT
FDD86567_F085DKR-ND
FDD86567-F085TR
JEDEC-95 Code: TO-252AA
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 60 V
Reference Standard: AEC-Q101
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