Fairchild Semiconductor - HGTG20N60C3D

HGTG20N60C3D by Fairchild Semiconductor

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Manufacturer Fairchild Semiconductor
Manufacturer's Part Number HGTG20N60C3D
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 164 W; Maximum Collector Current (IC): 45 A; Terminal Finish: MATTE TIN;
Datasheet HGTG20N60C3D Datasheet
In Stock717
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 45 A
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Maximum Rise Time (tr): 28 ns
Transistor Application: MOTOR CONTROL
Maximum Gate-Emitter Threshold Voltage: 6.3 V
Sub-Category: Insulated Gate BIP Transistors
Surface Mount: NO
Terminal Finish: MATTE TIN
Nominal Turn Off Time (toff): 388 ns
No. of Terminals: 3
Maximum Power Dissipation (Abs): 164 W
Terminal Position: SINGLE
Nominal Turn On Time (ton): 52 ns
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Maximum Operating Temperature: 150 Cel
Maximum Fall Time (tf): 210 ns
JEDEC-95 Code: TO-247
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 600 V
Additional Features: LOW CONDUCTION LOSS
Maximum Gate-Emitter Voltage: 20 V
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