
Image shown is a representation only.
Manufacturer | Fairchild Semiconductor |
---|---|
Manufacturer's Part Number | HGTG20N60C3D |
Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 164 W; Maximum Collector Current (IC): 45 A; Terminal Finish: MATTE TIN; |
Datasheet | HGTG20N60C3D Datasheet |
In Stock | 717 |
NAME | DESCRIPTION |
---|---|
Package Body Material: | PLASTIC/EPOXY |
Maximum Collector Current (IC): | 45 A |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Maximum Rise Time (tr): | 28 ns |
Transistor Application: | MOTOR CONTROL |
Maximum Gate-Emitter Threshold Voltage: | 6.3 V |
Sub-Category: | Insulated Gate BIP Transistors |
Surface Mount: | NO |
Terminal Finish: | MATTE TIN |
Nominal Turn Off Time (toff): | 388 ns |
No. of Terminals: | 3 |
Maximum Power Dissipation (Abs): | 164 W |
Terminal Position: | SINGLE |
Nominal Turn On Time (ton): | 52 ns |
Package Style (Meter): | FLANGE MOUNT |
JESD-30 Code: | R-PSFM-T3 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | THROUGH-HOLE |
Maximum Operating Temperature: | 150 Cel |
Maximum Fall Time (tf): | 210 ns |
JEDEC-95 Code: | TO-247 |
Polarity or Channel Type: | N-CHANNEL |
JESD-609 Code: | e3 |
Qualification: | Not Qualified |
Maximum Collector-Emitter Voltage: | 600 V |
Additional Features: | LOW CONDUCTION LOSS |
Maximum Gate-Emitter Voltage: | 20 V |